AP28G45 Search Results
AP28G45 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AP28G45EM | Advanced Power Technology | N-CHANNEL INSULATED GATE | Original | 71.84KB | 3 | ||
| AP28G45GEM | Advanced Power Electronics | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Original | 72.43KB | 3 | ||
| AP28G45GEO-HF | Advanced Power Electronics | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Original | 91.82KB | 4 |
AP28G45 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
AP28G45GEMContextual Info: AP28G45GEM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick Current Capability C ▼ 3.3V Gate Drive ▼ Strobe Flash Applications VCE 450V ICP 130A C C C C G G E SO-8 |
Original |
AP28G45GEM AP28G45GEM | |
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Contextual Info: Advanced Power Electronics Corp. AP28G45GEM-HF-3 Insulated Gate Bipolar Power Transistor High Input Impedance High Peak Current Capability 450V VCE C C I CP 130A C C Low 3.3V Gate Drive Strobe Flash Applications E SO-8 RoHS-compliant, halogen-free package |
Original |
AP28G45GEM-HF-3 AP28G45 28G45GEM | |
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Contextual Info: AP28G45EM Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Input Impedance High Pick Current Capability C 3.3V Gate Drive Strobe Flash Applications VCE 450V ICP 130A C C C C G G E SO-8 E E E Absolute Maximum Ratings |
Original |
AP28G45EM | |
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Contextual Info: AP28G45GEO-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Input Impedance High Peak Current Capability E Low Gate Drive Strobe Flash Applications G E E VCE 400V ICP 150A C C TSSOP-8 C C C G E Absolute Maximum Ratings |
Original |
AP28G45GEO-HF 00V/us, 0V-30V) | |
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Contextual Info: AP28G45GEM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Input Impedance High Pick Current Capability C 3.3V Gate Drive Strobe Flash Applications VCE 450V ICP 130A C C C C G G E SO-8 E E E |
Original |
AP28G45GEM | |
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Contextual Info: AP28G45GEO-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak Current Capability E ▼ Low Gate Drive ▼ Strobe Flash Applications G E E VCE 400V ICP 150A C C TSSOP-8 |
Original |
AP28G45GEO-HF 00V/us, 0V-30V) | |
|
Contextual Info: Advanced Power Electronics Corp. AP28G45GEO-HF-3 Insulated Gate Bipolar Power Transistor High Peak Current Capability G E E 400V VCE High Input Impedance E I CP 150A Low Gate Drive Strobe Flash Applications TSSOP-8 RoHS-compliant, halogen-free package C C |
Original |
AP28G45GEO-HF-3 AP28G45 28G45GEO | |
AP28G45EMContextual Info: AP28G45EM Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick Current Capability C ▼ 3.3V Gate Drive ▼ Strobe Flash Applications VCE 450V ICP 130A C C C C G G E SO-8 E E E Absolute Maximum Ratings |
Original |
AP28G45EM AP28G45EM |