AP20GT60SW Search Results
AP20GT60SW Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AP20GT60SW | Advanced Power Electronics | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Original | 58.02KB | 3 |
AP20GT60SW Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C High Speed Switching Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A Built-in Fast Recovery Diode VCES 600V IC 20A C C G E E Absolute Maximum Ratings |
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AP20GT60SW -55tor-Emitter | |
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Contextual Info: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode VCES 600V IC 20A C G C |
Original |
AP20GT60SW | |
20GT60swContextual Info: Advanced Power Electronics Corp. AP20GT60SW-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching Low Saturation Voltage Typical V CE sat = 1.8V at IC=20A VCES 600V IC 20A C (tab) G Built-in Fast Recovery Diode C C RoHS-compliant, halogen-free |
Original |
AP20GT60SW-HF-3 AP20GT60S 20GT60SW 20GT60sw | |
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Contextual Info: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage V CE sat ,Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode VCES 600V IC 20A C G C |
Original |
AP20GT60SW |