AOI Search Results

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Contextual Info: ADVANCED INTERCONNECTIONS. 5 Energy Way, P.O. Box 1019, West Warwick, RI 02893 USA Tel. 8 00 -4 24-9850/401-823-5200 Fax 401-823-8723 Email advintcorp@ aoi.com • Internet http://www.advintcorp.com ADVANCED INTERCONNECTIONS COMMITMENT TO CUSTOMER NEEDS!

Contextual Info: ADVANCED Molded Body z i9 Za9 Sockets INTERCONNECTIONS. 5 Energy Way, P.O. Box 1019, West Warwick, Rl 02893 USA Tel. 8 0 0 -4 2 4 -9 8 5 0 /4 0 1 -8 2 3 -5 2 0 0 -Fax 401-823-8723 Email advintcorp@ aoi.com • Internet http://ww w .advintcorp.com Dual In-Line

Contextual Info: AOD403/AOI403 30V P-Channel MOSFET General Description Product Summary The AOD403/AOI403 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high

Contextual Info: •an ‘AaisnaNi soiNoaioaia LS6601PS ‘ON O N I M V H O # # ! oo L • B i" # -L0 V 1 N 0 0 ( s sv w )¥ K ±3>00S m S IZ E *>IHO S :l (aivos)ir^ HSINId T V d 3 d Vd (9310N-E310N) AOITV d 3dd0o L oooz X- E -O (N O is N a w ia )fl-P - _ £

0032L

Abstract: ECL IC NAND
Contextual Info: TEKTRONIX INC/ TRI Û U I N T 2tE D B êmaiS 0000357 3 B T R Ü ' ' P M 3 -2 .3 M [ G lg a B it L o g ic Dual AO/AOI Gate 4-Wide 5,4,3,2 / 2-Wide 3,2 800 ps Propagation Delay /1 .4 GHz 10G PicoLogic Family FEATURES Dual AND/NAN D gate operation 150 ps output rise and fall times _

jrc 4086b

Abstract: 4086B TC4085BP tc4086bp CD4086B SCL4086B scl4086
Contextual Info: 101 - 4086B - Expandable 4 Wide 2 IN P U T AOI Gate mm y-b m AOI nm xm 8 mm 1 1/J. Ì 'V h 4^ '• :- d r M 'v+VTm • VDD 5V tr ■ I N H I B I T / E X P , 10V 1 5V 5V E N A B L E / E X P C 0 “ O C 7 ^ i3 ^ & iS -i> O tf 1 0V 15V 5V tP L H IN -> OUT

7451 ic

Abstract: 54S51 74LS51 74H51PC
Contextual Info: 51 CO NNECTIO N DIAGRAMS PINOUT A Offo-pfa 1/^4/7451 v^4H /74H 51 r -h M i S4S/74S51 ' - ’ ^Ö4LS/74LS51 m h ò ' f DUAL 2-WIDE, 2-INPUT AOI GATE DUAL 2-WIDE, 2-INPUT/3-INPUT AOI GATE CLS51 ORDERING CODE: See Section 9 PIN PKGS Plastic DIP P) Ceramic DIP (D)

HFE4085BP

Abstract: MN4085B jrc 4086b TC4085BP 180NS 4085B 4086B CD4085B CD4086B HCC4085B
Contextual Info: 100 4085B — — Dual 2 Wide 2 Input AOI G ate 101 - 4086B - Expandable 4 Wide 2 INPUT AOI Gate mm y-b m AOI nm xm 8 mm 1 1/J. Ì 'V h '• 4 ^ :-d r M 'v+VTm • VDD 5V tr ■ I N H I B I T / E X P , 10V 1 5V 5V E N A B L E / E X P C 0 “ O C 7 ^ i3 ^ & iS -i> O

AOI472

Contextual Info: AOI472 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOI472 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard

VTL3A44

Abstract: E73887 vactrol VTL3A14 VTL3A24
Contextual Info: Low Cost — 6.0 V, 240 mW Incandescent Axial Vactrols V T L 3 A 1 4 , 24, 44 PACKAGE DIMENSIONS inch mm UL Listed File # E 73887 Dual 'center tap" element version is available 1or VTL3A44. DESCRIPTION V T L 3 A 1 4 offers low "on" resistance and the fastest speed of response of any 6 .0 V AOI in

AOI452

Abstract: S 1476
Contextual Info: AOI452 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOI452 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard

3DC14AOI

Contextual Info: AOI 3-Axes Transponder Inductor 3DCoils SMD 3D Coil AOI 12.4x11.4x3.6 mm Features Small 3D coil version designed to achieve a very good electrical performance in the smallest dimensions. Keyless entry systems is a typical application for this coil, the isotropy is

Contextual Info: c n o o w rf0 3 '0 .rf9 :0 :ONU.Vld V3dV 10Ÿ1N0D ‘SOd f r t t ON NOLLISOd 1 3 3 ä -N O “ 3 d V l -1 AVdi 0 3w yoj wnnovA -j :30VMDVd . i * 0 C . -6 H U •N0LLdlä0S3Q 'ON OOUdC V U - 3 1 - S 3 0 :N0llV0UID3dS iDHOOddZ aoioo TvanivN A O n v d 3ddO O — Id O d d flS 1V13NP

Contextual Info: AOD7N65/AOI7N65 650V,7A N-Channel MOSFET General Description Product Summary The AOD7N65 & AOI7N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOD510/AOI510 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL

Contextual Info: Low Cost - 6.0 V, 240 mW Incandescent Axial Vactrols VTL3A14, 24, 44 PACKAGE DIMENSIONS inch mm UL Listed File #E 73887 Dual 'center tap- element version is available 1or VTL3A44. DESCRIPTION V T L 3 A 1 4 offers low "on" resistance and the fastest speed of response of any 6 .0 V AOI in

54LS55DMQB

Abstract: 54LS55FMQB DM74LS55M DM74LS55N J14A M14A N14A W14B
Contextual Info: LS55 National Semiconductor 54LS55/DM74LS55 2-Wide, 4-Input AOI Gate General Description This device contains a combination of AND-OR-INVERT functions. The internai gates are configured as two, four-input AND gates with their outputs connected to a two-input NOR gate.

7623X

Contextual Info: Datum Anforderunqsstufe ¡date xxxx r l I class uju ern Idn ra -I- A I •QIVIIQV -I- I 1— 1 R[ 2 ' — ' I ■- I =rfl 7.62 3 x 7,62 =22,86 U III III , □0,6 III u 2.54 7 x 2,54 =17,78 5,08 95 max. Elastische Einpresszone / compliant pressfit zone Isolierwerkstoff / Aoi/s/ny material

BJ-20

Contextual Info: Datum date Anforderunqsstufe class m .2.54 Elastische Einpresszone / compliant pressfit zone 02.8 1’ Isolierwerkstoff / Aoi/5//?g material •• PBT GF30 29.1-o,2 Bauort 7 / type 7 34.76 ±0.1 Anforderungsstufe 2 - 400 Steckzyklen / performance class 2 = 400 mating cycles

CN60

Contextual Info: Datum Anforderunqsstufe Elastische Einpresszone / compliant pressfit zone Isolierwerkstoff / Aoi/s/ny material Bauart 7 / PBT GF30 type 7 Anforderungsstufe 1 - 500 Steckzyklen / performance class 1 - 5 0 0 mating cycles Bestiickungsplan / Fehlende Masse und Angaben nach IEC 60 603-2 / DIN EN 60 603-2

AOI452A

Contextual Info: AOI452A N-Channel SDMOSTM Power Transistor General Description Features The AOI452A is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology

Contextual Info: AOD2N60A/AOI2N60A 600V,2A N-Channel MOSFET General Description Product Summary The AOD2N60A & AOI2N60A have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOD4185

Contextual Info: AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS ON and low gate charge. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high

Contextual Info: AOI530 30V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power MOSFET technology • Very Low RDS ON at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 70A ID (at VGS=10V) Application