AO8822L Search Results

AO8822L Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
AO8822L		Alpha & Omega Semiconductor	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor	Original	PDF	115.87KB	4

AO8822L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Nov 11, 2004 AO8822, AO8822L Green Product Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while	Original	AO8822, AO8822L AO8822	PDF
AO8822 Contextual Info: AO8822 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8822 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable	Original	AO8822 AO8822L	PDF
AO8822L Abstract: AO8822 m1924 Contextual Info: AO8822 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8822 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable	Original	AO8822 AO8822 AO8822L m1924	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: Nov 11, 2004 AO8822, AO8822L Green Product Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while

Original

AO8822, AO8822L AO8822

PDF

AO8822

Contextual Info: AO8822 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8822 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable

Original

AO8822 AO8822L

PDF

AO8822L

Abstract: AO8822 m1924
Contextual Info: AO8822 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8822 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable

Original

AO8822 AO8822 AO8822L m1924

PDF