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    AO4832 Search Results

    AO4832 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    AO4832
    Alpha & Omega Semiconductor Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF 112.02KB 4
    AO4832
    Alpha & Omega Semiconductor SMPS - 30V Dual N-Channel MOSFET Original PDF 555.93KB 6
    AO4832L
    Alpha & Omega Semiconductor Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF 112.02KB 4
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    AO4832 Price and Stock

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    Alpha & Omega Semiconductor AO4832

    MOSFET 2N-CH 30V 10A 8SOIC
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    DigiKey AO4832 Reel 3,000
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    Quest Components () AO4832 4,592
    • 1 $0.81
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    • 100 $0.81
    • 1000 $0.32
    • 10000 $0.28
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    AO4832 4,592
    • 1 $0.81
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    • 1000 $0.21
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    TME AO4832 1
    • 1 $1.11
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    • 100 $0.31
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    Chip 1 Exchange AO4832 1,608
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    AOS Thermal Compounds AO4832

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    Bristol Electronics AO4832 5,741 9
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    • 100 $0.39
    • 1000 $0.17
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    AO4832 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AO4832

    Abstract: AO4832L AO8816
    Contextual Info: AO4832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4832 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a


    Original
    AO4832 AO4832 AO4832L AO8816 PDF

    ao4832

    Contextual Info: AO4832 30V Dual N-Channel MOSFET General Description Product Summary The AO4832 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. ID (at VGS=10V)


    Original
    AO4832 AO4832 PDF

    AO4832

    Contextual Info: AO4832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4832 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a


    Original
    AO4832 AO4832L Paramete150 PDF

    Contextual Info: AO4832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4832 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a


    Original
    AO4832 AO4832 PDF