AN-372 FAIRCHILD Search Results

Contextual Info: CFS2410B CFS2410B CAM GENERAL D ESCRIPTIO N: 8 X 4 CAM WITH MASK CFS2410B is an 8-word by 4-bit Content Addressable Memory CAM . This megafunction is functionally identical to the National (Fairchild) 100142 except that it has eight words instead o f four. For a detailed

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

4710

Abstract: 18-PIN ScansUX1003 4710 fairchild
Contextual Info: 4710/4710B REGISTER S T A C K - 1 6 x 4 RAM WITH 3-STATE OUTPUT REGISTER FAIRCHILD CMOS MACROLOGIC DESCRIPTIO N - The 4710 is a register oriented high speed 64-bit Read/Write Memory organized as 16-words by 4-bits. An edge triggered 4-bit output register allows new input

Contextual Info: F100141 8-Bit Shift Register FAIRCHILD A S chlum berger C om pany FIOOK E C L P ro d u c t C onnection D iagram s D escription T h e F100141 c o n ta in s e ig h t e d g e -trig g e re d , D -ty p e 24-P in D IP T o p V iew flip -flo p s w ith in d iv id u a l in p u ts (P n ) and o u tp u ts (Q n ) fo r

sm 9112

Abstract: three phase generator 9110 equivalent fairchild 9112 "THREE-PHASE GENERATOR" MQS3700 micrologic IV-11 9109 DC 9112
Contextual Info: HIGH LEVEL LOGIC DIODE-TRANSISTOR MICROLOGIC. INTEGRATED CIRCUITS COMPOSITE DATA SHEET A F A IR C H IL D C O M P A T IB L E C U R R E N T S IN K IN G LO G IC P R O D U C T O 'C TO 7 5 * C T E M P E R A T U R E RA N G E GENERAL DESCRIPTION— The Fairchild High Level Logic Diode-Transistor M icrologic* Integrated Circuit

AN-985

Contextual Info: Table of Contents Table of Contents S ec tio n 1 S erial C M O S E E P R O M s IIC Interface E EPR O M S. 11 NM24C00 512-Bit Standard 2-Wire Bus Interface Serial E E P R O M . 12

93c66

Abstract: 68HC11 80
Contextual Info: Fairchild Application Note 1012 SPI Versus MICROWIRE™ EEPROM Comparison FAIRCHILD SEMICONDUCTOR TM 5V INTRODUCTION The SPI Serial Peripheral Interface provides a simple eight bit serial port useful in communicating with external devices. Prior to the SPI EEPROMs introduction, engineers used the standard

Contextual Info: 4710B/4710BX REGISTER STAC K* 1 6 x 4 RAM WITH 3-STATE OUTPUT REGISTER FAIRCHILD CMOS M A C R O L O G IC D E S C R IP T IO N — T h e 471 O B /4 7 1 0 B X is a register o rie n te d high speed 6 4 - b it R e a d /W rite L O G IC S Y M B O L M e m o ry organized as 1 6 -w o rd s b y 4 -b its . A n edge trigg e re d 4 -b it o u tp u t register allow s

HP-8591A

Abstract: AN-1070 GTL16612 GTLP16612
Contextual Info: Fairchild Semiconductor Application Note February 1997 Revised October 1998 Fairchild’s GTLP vs. TI’s GTL: A Performance Comparison from a System Perspective ABSTRACT BACKGROUND GTL is an I/O technology which is becoming popular for driving high speed backplanes. Both Fairchild Semiconductor and Texas Instruments offer interface logic devices

HP-8591A

Abstract: AN-1070 GTL16612 GTLP16612
Contextual Info: Fairchild Semiconductor Application Note February 1997 Revised December 2000 GTLP vs. GTL: A Performance Comparison from a System Perspective Abstract Background GTL/GTLP is an I/O technology for driving high speed backplanes. Both Fairchild Semiconductor and Texas

HP-8591A

Abstract: AN-1070 GTL16612 GTLP16612
Contextual Info: Fairchild Semiconductor Application Note 1070 March 1998 ABSTRACT GTL is an I/O technology which is becoming popular for driving high speed backplanes. Both Fairchild Semiconductor and Texas Instruments offer interface logic devices designed around the GTL JEDEC specification. This paper compares

74ls122 circuit applications

Abstract: 74LS122N DM9601 DM8601 74LS221 AN007 dm8602 54LS122J 54ls221 application circuits of ic 74121
Contextual Info: Fairchild Semiconductor Application Note 372 May 1984 INTRODUCTION Fairchild Semiconductor manufacturers a broad variety of industrial bipolar monostable multivibrators one-shots in TTL and LS-TTL technologies to meet the stringent needs of systems designers for applications in the areas of pulse generation, pulse shaping, time delay, demodulation, and edge detection of waveforms. Features of the various device types

26A10

Abstract: FDN372S
Contextual Info: FDN372S 30V N-Channel PowerTrench SyncFET General Description Features The FDN372S is designed to replace a single MOSFET and Schottky diode, used in synchronous DC-DC power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power

CNY 14-4

Abstract: 0q00 ScansUX1003
Contextual Info: 4705/4705B ARITHMETIC LOGIC REGISTER STACK FAIRCHILD C M O S M A C R O LO G IC 1 DESCR IPTIO N — The A rith m e tic Logic Register Stack A LR S is designed to im plem ent accum ulators in high performance m icroprogram m ed digital systems. The device contains

RXE9

Abstract: deutsch rsm
Contextual Info: DP83850C 100 Mb/s TX/T4 Repeater Interface Controller 100RIC General Description Features The DP83850C 100 Mb/s TX/T4 Repeater Interface Con- • IEEE 802.3u repeater and management compatible troller, known as 100RIC, is designed specifically to meet ■ Supports Class II TX translational repeater and Class I

deutsch rsm

Abstract: DP83858C RXE9
Contextual Info: DP83850C 100 Mb/s TX/T4 Repeater Interface Controller 100RIC General Description Features The DP83850C 100 Mb/s TX/T4 Repeater Interface Con- • IEEE 802.3u repeater and management compatible troller, known as 100RIC, is designed specifically to meet ■ Supports Class II TX translational repeater and Class I

Contextual Info: r* 1 " 7 J nv ' 4705B/4705BX ARITHMETIC LOGIC REGISTER STACK FAIRCHILD CMOS MACROLOGIC D E S C R IP T IO N — T h e A rith m e tic Logic Register Stack A L R S is designed to im plem ent accumulators in high perform ance m icroprogram m ed digital systems. The device contains

Contextual Info: Advance Information FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description „ Max rDS on = 24 mΩ at VGS = -4.5 V, ID = -8 A This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.

AN-372 fairchild

Abstract: CERAMIC DISK CAPACITOR AN-372 DM74LS123 DM74LS123M DM74LS123N LS123 M16A N16E
Contextual Info: S E M IC O N D U C T O R tm DM74LS123 Dual Retriggerable One-Shot with Clear and Complementary Outputs General Description The D M 74LS123 is a dual retriggerable m onostable m ultivi­ brator capable of generating output pulses from a few nano-seconds to extrem ely long duration up to 100% duty

Contextual Info: FRK264D, FRK264R, FRK264H 34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 34A, 250V, RDS on = 0.120Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

FRK264R

Abstract: 1E14 2E12 FRK264D FRK264H Rad Hard in Fairchild for MOSFET
Contextual Info: FRK264D, FRK264R, FRK264H 34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 34A, 250V, RDS on = 0.120Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FDMC7582 N-Channel PowerTrench MOSFET 25 V, 49 A, 5.0 mΩ Features General Description „ Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 16.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node

Contextual Info: FDMC7582 N-Channel PowerTrench MOSFET 25 V, 49 A, 5.0 mΩ Features General Description „ Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 16.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node

Contextual Info: FDMC7582 N-Channel PowerTrench MOSFET 25 V, 49 A, 5.0 mΩ Features General Description „ Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 16.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node