AN POWER AMPLIFIER 108 MHZ Search Results

GRM1882C1H330JA01D

Abstract: GRM1882C1H101JA01D GRM1882C1H470JA01D RD02MUS1B GRM1882C1H120DZ01D GRM1882C1H301JA01D rd02mus1
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-108-A Date : 3th Jun. 2010 Rev. Date :22th Jun. 2010 Prepared : H.Ukita, K.Osaki Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

blf574

Abstract: Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d
Contextual Info: AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Rev. 01 — 26 January 2010 Application note Document information Info Content Keywords BLF574, 600 MHz performance, high voltage LDMOS, amplifier implementation, Class-B CW, FM band, pulsed power Abstract

Contextual Info: Ultralow Noise BiFET Op Amp AD743 Excellent DC Performance 0.5 mV Max Offset Voltage 250 pA Max Input Bias Current 1000 V/mV Min Open-Loop Gain AC Performance 2.8 V/␮s Slew Rate 4.5 MHz Unity-Gain Bandwidth THD = 0.0003% @ 1 kHz Available in Tape and Reel in Accordance with

IC OP AMP for Piezoelectric transducers

Abstract: hydrophone transducer servo accelerometer hydrophone AD743 AD743-Typical ir photodiode amplifier AD743JN AD743JR-16 AD743JR-16-REEL
Contextual Info: Ultralow Noise BiFET Op Amp AD743 Excellent DC Performance 0.5 mV Max Offset Voltage 250 pA Max Input Bias Current 1000 V/mV Min Open-Loop Gain AC Performance 2.8 V/␮s Slew Rate 4.5 MHz Unity-Gain Bandwidth THD = 0.0003% @ 1 kHz Available in Tape and Reel in Accordance with

Contextual Info: DMTDM, R1E L E M IE u r m LT1215 /12 16 i TECH N O LO G Y 23MHz, Single Supply Dual a n d Q u a d Precision O p Amps 5 0 V / [a s , January 1993 D€SCRIPTION F€ßTUR€S 50V/jiS Typ Slew Rate 23 MHz Typ Gain-Bandwidth Product Fast Settling to 0.01% 250ns Typ

EZ 707

Contextual Info: 108&3
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 FEATURES • HIGH VOLTAGE - 300 VOLTS • HIGH OUTPUT CURRENT – 1.5 AMPS • 70 WATT DISSIPATION CAPABILITY • 175 MHz GAIN BANDWIDTH

PA60U

Contextual Info: * )
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108&3
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 FEATURES • RoHS COMPLIANT • LOW COST • WIDE BANDWIDTH - 1.1 Mhz • HIGH OUTPUT CURRENT - 1A per amplifier • WIDE COMMON MODE RANGE Includes negative supply

Contextual Info: ASF240 5 ~ 1000 MHz MMIC Amplifier Features Description 26.3 dB Gain at 150 MHz 20.5 dBm P1dB at 150 MHz 41 dBm Output IP3 at 150 MHz 3.0 dB NF at 150 MHz MTTF > 100 Years Single Supply The ASF240, a IF gain block amplifier MMIC, has a

Contextual Info: STM32F328x8 ARM -Cortex®-M4 32b MCU+FPU, 64KB Flash, 16KB SRAM, 2 ADCs, 3 DAC channels, 3 COMPs, Op-Amp, 1.8 V Datasheet −production data Features • Core: ARM®-32-bit-Cortex®-M4 CPU with FPU 72 MHz max , single-cycle multiplication and HW division, and DSP instruction

PA75CC

Abstract: PA75CX cd 4611 PA75CD TO220-7 package
Contextual Info: %6"-
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 FEATURES • RoHS COMPLIANT • LOW COST • WIDE BANDWIDTH - 1.1 Mhz • HIGH OUTPUT CURRENT - 2.5A (Combined) • WIDE COMMON MODE RANGE Includes negative supply

M 108

Contextual Info: SMM-108, -110 500-3000 MHz Low Noise Amplifier Preliminary Data Features - 3.2dB Noise Figure - Excellent VSW R: 1.5:1 Typical - 19dB Gain and 12dBm P1dB - Operates From Single 12V Supply - Low-Cost Surface-Mount Package S M M -110 LTtt Pm Dcaionatton 1 Ground

BLF278 equivalent

Abstract: an power amplifier 108 mhz blf278 108 amplifier FM301-108 BLF278 power amplifier blf278 300w amplifier 300w fm amplifier SOCKET HEAD CAP SCREWS application MOSFET transmitters fm
Contextual Info: FM301-108 PRELIMINARY 300 W - FM Amplifier Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 87.5 ÷ 108 MHz 48 Volts Input/Output 50 Ω

bluetooth transmitter receiver circuit diagram

Abstract: BCM20780 bluetooth transmitter circuit diagram BCM2049 bcm2078 circuit diagram of bluetooth fm transmitter Broadcom bluetooth BCM207 BCM2048 Bluetooth internal circuit diagram
Contextual Info: BCM2049 Brief SINGLE-CHIP BLUETOOTH® 2.1 + EDR WITH INTEGRATED FM TRANSCEIVER FEATURES • FM Transceiver • 65–108 MHz FM+RDS/RBDS band support for world coverage, including OIRT support for Eastern Europe • Supports external or internal antenna configurations

24v up Audio amplifier

Abstract: MO-166 PA162 PA162DK
Contextual Info: PA162 PA162 JHI
7PMUBHF
1PXFS
0QFSBUJPOBM
"NQMJGJFST FEATURES LOW COST WIDE BANDWIDTH - 1.1 Mhz  HIGH OUTPUT CURRENT - 1A PER AMPLIFIER  WIDE COMMON MODE RANGE Includes negative supply  WIDE SUPPLY VOLTAGE RANGE Single supply: 5V to 40V Split supplies: ± 2.5V to ± 20V

Contextual Info: Si4825-DEMO Si4825 D EMO B OARD U SER ’ S G UIDE 1. Features ATAD analog tune and analog display AM/FM/SW radio Worldwide FM band support 64–109 MHz with 18 bands, see the Table 1 Worldwide AM band support 504–1750 kHz with 5 bands, see the Table 1

Absolute Value Circuit

Abstract: AD637 AD637JR AD637AQ AD637AR AD637BQ AD637BR AD637JD AD637KD AD637S
Contextual Info: a FEATURES High Accuracy 0.02% Max Nonlinearity, 0 V to 2 V RMS Input 0.10% Additional Error to Crest Factor of 3 Wide Bandwidth 8 MHz at 2 V RMS Input 600 kHz at 100 mV RMS Computes: True RMS Square Mean Square Absolute Value dB Output 60 dB Range Chip Select-Power Down Feature Allows:

Contextual Info: Si4836-DEMO Si4836 D EMO B OARD U SER ’ S G UIDE 1. Features ATAD analog tune and analog display AM/FM/SW radio Worldwide FM band support from 64–109 MHz with 5 bands, see Table 1 Worldwide AM band support from 504–1750 kHz with 5 bands, see Table 1

Contextual Info: AST54S High Gain, Low Noise Amplifier Features Description 19.0 dB Gain at 900 MHz 0.4 dB NF at 900 MHz 30 dBm OIP3 at 900 MHz 18 dBm P1dB at 900 MHz One-stage LNA AST54S is a one-stage LNA which has a low noise, high gain, and high linearity over a wide range of

Philips 4312 020

Abstract: BLV25 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 blw 64 rf transistor PHILIPS 4312 amplifier philips rf choke ferrite 151 schematic for 88 to 108 amplifier
Contextual Info: APPLICATION NOTE Wideband 300 W push-pull FM amplifier using BLV25 transistors AN98031 Philips Semiconductors Wideband 300 W push-pull FM amplifier using BLV25 transistors CONTENTS 1 INTRODUCTION 2 AMPLIFIER DESIGN THEORY 2.1 2.2 2.3 The output network The input network

2N6136

Abstract: uhf amplifier design equivalent transistor bc 172 b ARCO 465 Compression Trimmer Capacitor 2N5946 AN-282A Transistor 2274 AN548A AN555 AN282A
Contextual Info: Order this document by AN548A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN548A MICROSTRIP DESIGN TECHNIQUES FOR UHF AMPLIFIERS Prepared by: Glenn Young power gain of 16 dB and a bandwidth – 1 dB of 8 MHz. Overall efficiency is 48.5% and all harmonics are a minimum

TDA1595T

Abstract: C1213 fm frontend
Contextual Info: Philips Semiconductors Datasheet statu* Objective specification date of Issue March 1991 FEATURES • Radio frequency range of 76 to 90 MHz Japan or 87.5 to 108 MHz (Europe, USA) • Integrated pre-amplifier • Internal wideband AGC controlling the pre-amplifier

Contextual Info: ~T~- 1 4 C C t-0 JonU E H R 9/89 1 N 2225-K Martin Avenue, Santa Clara, CA 95050 (408 492-1400 FAX (408)492-1500 C O M P O N E N T S 5 to 500 MHz TO-8 Cascadable Amplifier High Output Level . High Efflcency . High Third Order I.P. .

SD2942

Abstract: sd2942 module "RF Power Amplifier" 2L TRANSISTOR CuMoCu Ni100 sd2942 108 NI 100 m177
Contextual Info: STEVAL-TDR010V1 RF power amplifier demonstration board using: 2 x SD2942 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min. ■ Gain: 19.5 dB min.

"RF Power Amplifier"

Abstract: 2L TRANSISTOR Ni100 SD2932
Contextual Info: STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 650 W min. ■ Gain: 19.5 dB min.