AMQ 60 Search Results

BB18

Contextual Info: Extract from the online catalog HC-B 10-AMQ-EMV Order No.: 1642522 HEAVYCON panel mounting base B10, with double locking latch, EMC version. Not suitable for D series terminal adapters

8080 intel microprocessor pin diagram

Abstract: 8008 intel microprocessor pin diagram 8008 Intel luci interface 6H20 intel 8008 z-80 zilog DAC 8080 8080a intel microprocessor pin diagram 8008 registers
Contextual Info: M icroprocessor-l nterfaced 8-BIT ANALOG OUTPUT SYSTEM MP10/11 I FEATURES • COMPATIBLE WITH: 8080 fIntel • EASY TO USE 9080A |AMQ) Completely compatible with most microprocessors Z-80 Zilog) No external logic required 6800 (Motorola) Timing compatible

Contextual Info: Extract from the online catalog HC-B 10-AMQ-EMV Order No.: 1642522 HEAVYCON panel mounting base B10, with double locking latch, EMC version. Not suitable for D series terminal adapters

AMQ 60

Contextual Info: DRAWING T H IS MADE DRAWING IN 4 THIRD A NGL E IS UNPUBLISHED. COPYRIGHT 19 PROJECTION RELEASED BY AMP FOR P U B L I C A T I O N INCORPORATED. ALL LOC ,19 D IS T AR IN TERNATIO NAL RIG H T5 RESERVED. 39 R E V IS IO N S ZONE D ES C RIP TIO N LTR B REL PER

MV 3581

Abstract: 3583AMQ 3583AM 3583JMQ 3582 AMQ 60
Contextual Info: 140 - • B.B. Æ & 3 583 A M , JM Fee Vcc' HYB Tc = 2S’C fë fë ( / \ -f + ÿ ji- j 150 + 50— + 150 V.rf {+ Vcc +1 —Vr:c 1! V> +V cc'— Vcc — V V V V mW Pd Icc 'ÿ UL ' Ao Icc Vo h It Sc SR mA Vio —55— +125 °C CMR T,tg - 5 5 — +125 t

HYM532200AM

Abstract: L76 H hym532200A
Contextual Info: •HYUNDAI SEMICONDUCTOR HYM532200A Series 2M X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532200A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22ftF decoupling capacitor is mounted for each DRAM.

2SA1791

Abstract: 2SC4656
Contextual Info: Transistor 2SC4656 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1791 Unit: mm 1.6±0.15 0.4 1 3 0.5 0.5 +0.1 Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.

Contextual Info: “H Y U N D A I SEMICONDUCTOR H Y M 536400A Series 4M x 36-blt CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of thirty six HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each

transistor marking AMq

Abstract: 2SA1748 2SC4562
Contextual Info: Transistor 2SC4562 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1748 Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage

Contextual Info: ♦HY UNDAI HYM532256A Series SEMICONDUCTOR 256K X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532256A is a 256K x 32-bit Fast page mode CMOS DRAM module consisting of eight HY534256A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/tF decoupling capacitor is mounted for each DRAM.

HYM532100AMG

Abstract: MCS28 HYM532100A hym532100AM
Contextual Info: • HSEMICONDUCTOR YUNDAI H Y M 5 3 2 1 0 0 A S e r ie s 1M x 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.

Contextual Info: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.

KA2212

Abstract: 100 audio amplifier circuit diagram Samsung Capacitor sse
Contextual Info: SAMSUNG SEMICONDUCTOR INC Tfl " KA2212 D E | T T b H l M E OQOBflflS 4 T ~ " M*o 5 ' O f LINEAR INTEGRATED CIRCUIT 0.5W AUDIO POWER AMPLIFIER The KA2212 is a monolithic integrated audio power amplifier in 9 pin plastic single in line package, designed for audio frequency c la ss B

527H

Abstract: D 1413 transistor S822T
Contextual Info: T em ic S822T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. A Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features

2SA1748

Abstract: 2SC4562
Contextual Info: Transistor 2SC4562 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1748 Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage

2SA1748

Abstract: 2SC4562
Contextual Info: Transistor 2SC4562 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1748 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● 2.1±0.1 ● 3 High transition frequency fT. Small collector output capacitance Cob.

HYM536100A

Contextual Info: H Y U ND A I HYM536100A Series SEMICONDUCTOR 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22p.F decoupling

HYM536200AM

Abstract: HYM536200A HYM536200AM/ALM WE005 HYM536200Aibm pc 700M/ALM
Contextual Info: •HYUNDAI SEMICONDUCTOR HYM536200A Series 2M X 36-blt CM O S DRAM MODULE PRELIMINARY DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode C M O S DRAM module consisting of sixteen HY514400A in 20/26 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board, 0.2^uF decoupling

Contextual Info: - H Y U N D A I H Y M 5 3 6 2 A M - S e r i e s 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ and eight HY531OOOA in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling

Contextual Info: H Y U ND A I HYM536400A Series SEMICONDUCTOR 4M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of thirty six HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each

Contextual Info: -HYUNDAI H Y M 5 3 6 1 0 0 A M -S e r ie s I M l 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling

HYM532200AM

Abstract: gaa 816
Contextual Info: HYUNDAI SEMICONDUCTOR HYM532200A Series 2M X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532200A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.

HYM5361

Abstract: HYM536100AMG hym536100
Contextual Info: " H Y U N D A I SEMICONDUCTOR H Y M 5 3 6 1 0 0 A S e r ie s 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100Ais a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board, 0.22 iFdecoupling

APC UPS CIRCUIT DIAGRAM

Abstract: 80c520 PPB2 DS80CH11 80C32 SA10 led display alarm clock 8051 microcontroller SM214
Contextual Info: DS80CH11 DS80CH11 System Energy Manager PRODUCT SPECIFICATION V2.1 011200 1/88 DS80CH11 TABLE OF CONTENTS 1.0 2.0 3.0 4.0 5.0 6.0 GENERAL DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5