AMPLIFIER 32 OHM Search Results

HMC268LM1

Contextual Info: HMC268LM1 MICROWAVE CORPORATION SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz FEBRUARY 2001 Features General Description SMT mmWAVE PACKAGE The HMC268LM1 is a two stage GaAs MMIC Low Noise Amplifier LNA in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1

HMC261LM1

Contextual Info: HMC261LM1 MICROWAVE CORPORATION SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz V01.0900 FEBRUARY 2001 AMPLIFIERS 1 Features General Description SMT mmWAVE PACKAGE The HMC261LM1 is a GaAs MMIC distributed amplifier in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1 is a true

Contextual Info: RDA1005L RDA1005LDigital Controlled Variable Gain Amplifier 50MHz to 4000MHz, 6 Bit DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50MHZ TO 4000MHZ, 6 BIT Features AMPIN 1 GND 2 GND CLK 29 DATA 30 LE GND 31 GND GND 32 AMPOUT GND Package: MCM, 32-Pin, 5.2mm x 5.2mm

Contextual Info: Subsystems & Accessories 32 x 64 Matrix Features o o o o o o 32 input fan-out to 64 outputs Frequency Band: 3.4-4.2 GHz 50 Ohm impedance SMA Connectors GaAs MMIC Switching design. RS422 control 2way div/ amplifier In 1 - 16 64 cables SP2T Output 1 16 x 32

HMC143

Abstract: HMC203 HMC258 HMC264 HMC265 HMC281
Contextual Info: HMC281 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER 18 - 32 GHz FEBRUARY 2001 V02.0500 Features General Description EXCELLENT NOISE FIGURE: 2.5 dB The HMC281 chip is a three stage GaAs MMIC Low Noise Amplifier LNA which covers the frequency range of 18 to 32 GHz. The chip can

Contextual Info: SmartStep Subsystems 32 x 64 Matrix Features o o o o o o 32 input fan-out to 64 outputs Frequency Band: 3.4-4.2 GHz 50 Ohm impedance SMA Connectors GaAs MMIC Switching design. RS422 control 2way div/ amplifier SP2T In 1 - 16 64 cables Output 1 16 x 32 Fan Out

HMC414MS8G

Contextual Info: HMC414MS8G v02.1202 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE

HMC414MS8G

Contextual Info: HMC414MS8G v01.1201 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 1 Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE

Contextual Info: RFDA2025 RFDA2025Digital Controlled Variable Gain Amplifier DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER    High OIP3/P1dB=+43/25dBm Gain=-20dB to +11.5dB at 2017MHz Footprint Compatible with 32-Pin 5mmx5mm QFN Applications  Cellular, PCS, 3G Infrastructure

2032 ghz

Abstract: lodr EMA407A
Contextual Info: Excelics EMA407A TENTATIVE DATA SHEET 20-32 GHz SUB-HARMONICALLY PUMPED MIXER FEATURES • • • • • • 20-32 GHz BANDWIDTH INTEGRATED LO AMPLIFIER 11 dB ± 1.5 dB TYPICAL CONVERSION LOSS 0.3 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

HMC264

Contextual Info: y2 k n ew ! HMC264 MICROWAVE CORPORATION GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 20 - 32 GHz FEBRUARY 2001 Features General Description INTEGRATED LO AMPLIFIER: -4dBm INPUT The HMC264 chip is a sub-harmonically pumped x2 MMIC mixer with an integrated LO amplifier

HMC489LP5

Abstract: HMC489LP5E
Contextual Info: HMC489LP5 / 489LP5E v01.0705 SURFACE MOUNT PHEMT 1 WATT POWER AMPLIFIER, 12 - 16 GHz AMPLIFIERS - SMT 5 Typical Applications Features The HMC489LP5 / HMC489LP5E is ideal for use as a power amplifier for: Saturated Power: +32 dBm @ 16% PAE • Point-to-Point Radios

HMC489LP5E

Abstract: 500 watt power circuit diagram HMC489LP5 15 watt power supply circuit diagram
Contextual Info: HMC489LP5 / 489LP5E v01.0705 SURFACE MOUNT PHEMT 1 WATT POWER AMPLIFIER, 12 - 16 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC489LP5 / HMC489LP5E is ideal for use as a power amplifier for: Saturated Power: +32 dBm @ 16% PAE • Point-to-Point Radios

CN1E4KTTD

Abstract: RDA1005L 68nH CN1E4KTT
Contextual Info: RDA1005L RDA1005LDigital Controlled Variable Gain Amplifier 50MHz to 4000MHz, 6 Bit DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50MHZ TO 4000MHZ, 6 BIT  Broadband 50MHz to 4000MHz Operation GND 2 GND DATA CLK 29 LE 30 GND GND 31 AMPOUT GND 32 28 27 26 25

Triode

Abstract: RADIOTRON rca company 25N6G Scans-0017370
Contextual Info: 25N 6-G + DIRECT-COUPLED POWER AMPLIFIER H eater* Coated Unipotential Cathode Voltage 25 a-c or cf-c vo lts amp. Current 0.3 Maximum Overall Length 4-17/32" Maximum Seated Height 3- 31 / 32 " 1-9/16" Maximum Diameter ST-12 Bui b Srnal ] Shell Octal 7-Pin Base

S-14

Abstract: Scans-0017402
Contextual Info: CX'234 SUPER-CONTROL R-F AMPLIFIER PENTODE T h e '3 4 is a super-control pentode recommended for use pri­ marily as a radio-frequency amplifier and intermediate-frequency amplifier in battery-operated receivers em ploying the ’ 30, ’ 31, ’ 32, an d /o r ’ 33 where economy of filament current drain is important.

HMC518

Contextual Info: HMC518 v00.0904 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC518 is ideal for use as a LNA or driver amplifier for: Noise Figure: 3.0 dB • Point-to-Point Radios OIP3: 23 dBm • Point-to-Multi-Point Radios & VSAT

HMC498LC4

Abstract: HMC499LC4
Contextual Info: HMC499LC4 v00.1204 SMT PHEMT MEDIUM POWER AMPLIFIER, 21 - 32 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC499LC4 is ideal for use as a driver or power amplifier for: +34 dBm Output IP3 • Point-to-Point Radios 16 dB Gain • Point-to-Multi-Point Radios & VSAT

HMC499

Contextual Info: HMC499 v00.0903 MICROWAVE CORPORATION GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 21 - 32 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC499 is ideal for use as a power amplifier for: +33 dBm Output IP3 • Point-to-Point Radios Gain: 16 dB • Point-to-Multi-Point Radios

Intel 8080 CPU Diagram

Abstract: SBC-80 8080 memory model 1200-001 AC1551 RTI-1200 RTI-1200-001 8080-based Intel 8080 instruction set RTM200
Contextual Info: Real-Time Analog I/O Interface MODEL RTI-1200 ANALOG ► DEVICES FEA TU R ES Complet«: Analog I/O Subsystem Intel SBC-80/10, 80/20, and MDS Compatible Memory Mapped I/O Interface Data Acquisition: Up to 32 Input Channels Sample and Hold Amplifier Programmable Gain Amplifier

RAYTHEON

Abstract: RMPA29400 2 Watt rf Amplifier power amplifier mmic
Contextual Info: Raytheon RMPA29400 RF Components 27-32 GHz 2.8 Watt Power Amplifier MMIC ADVANCED INFORMATION Description Features Electrical Characteristics At 25°C 50 Ω system, Vd=+5 V, Quiescent current (Idq) = 1.6 A The RMPA29400 is a high efficiency power amplifier designed for use in point to point radio, point to

HMC519

Contextual Info: HMC519 v00.0904 AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 32 GHz Typical Applications Features The HMC519 is ideal for use as either a LNA or driver amplifier for: Noise Figure: 2.8 dB • Point-to-Point Radios OIP3: 23 dBm • Point-to-Multi-Point Radios & VSAT

Die Attach and Bonding Guidelines

Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram agilent HMMC
Contextual Info: Agilent HMMC-5033 17.7-32 GHz Power Amplifier Data Sheet Features 2.74 x 1.31 mm 108 × 51.6 mils ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) Chip Size: Chip Size Tolerance: Chip Thickness: Description The HMMC-5033 is a MMIC power amplifier designed for use in

ma32

Abstract: APEX MICRO
Contextual Info: 32 CHANNEL HIGH VOLTAGE AMPLIFIER MA32 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y FEATURES 8 00 546-2739 DESCRIPTION The MA32 is a precision 32 channel high voltage driver for capacitive loads such as micro electromechanical systems (MEMS). The gain of each high voltage driver is internally set