AMPLIFIER 10 GHZ Search Results

SiGe HBT GAIN BLOCK MMIC AMPLIFIER

Contextual Info: SUF-2000 SUF-2000 0.2 GHz to 10 GHz, Cascadable pHEMT MMIC Amplifier 0.2 GHz to 10 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package:0.88 mm x 0.86 mm Product Description Features RFMD’s SUF-2000 is a monolithically matched broadband high IP3 gain block covering 0.05 GHz to 10 GHz. This pHEMT FET-based amplifier uses

SUF-9000

Abstract: SiGe HBT GAIN BLOCK MMIC AMPLIFIER pHEMT operating junction temperature
Contextual Info: SUF-9000DC to 10 GHz, Cascadable pHEMT MMIC Amplifier SUF-9000 Preliminary DC TO 10 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: Bare Die, 0.83 mm x 0.74 mm Product Description Features RFMD’s SUF-9000 is a monolithically matched broadband high IP3 gain block covering DC to 10 GHz. This pHEMT FET-based amplifier uses a self-bias Darlington

CGM-10-8001

Contextual Info: CGM-10-8001 Module Amplifier 8 GHz - 10 GHz This Module Amplifier offers exceptional performance over the band 8 GHz to 10 GHz with 10 dBm P1dB output power and 12 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC

Contextual Info: SUF-8500 SUF-8500DC to 10 GHz, Cascadable pHEMT MMIC Amplifier DC to 10 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: Bare Die, 0.83 mm x 0.74 mm Product Description Features RFMD’s SUF-8500 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier. The self biased direct coupled topology provides exceptional cascadable performance from DC - 10 GHz. Its efficient operation

SGA-8311Z

Abstract: InP transistor HEMT gp bjt SiGe HBT GAIN BLOCK MMIC AMPLIFIER rfmd mmic
Contextual Info: SUF-8500 SUF-8500DC to 10 GHz, Cascadable pHEMT MMIC Amplifier DC to 10 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: Bare Die, 0.83 mm x 0.74 mm Product Description Features RFMD’s SUF-8500 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier. The self biased direct coupled topology provides exceptional cascadable performance from DC - 10 GHz. Its efficient operation

8001

Abstract: TGM-10-8001
Contextual Info: TGM-10-8001 Module Amplifier 8 GHz - 10 GHz This Module Amplifier offers exceptional performance over the band 8 GHz to 10 GHz with 10.0 dBm P1dB output power and 12.0 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC

ha5006

Abstract: transistor amplifier 3 ghz 10 watts
Contextual Info: HBH PRELIMINARY C-Band 10 W Amplifier Microwave GmbH HA5006 General Description The HA5006 is a C-band power amplifier which covers the frequencies from 5.3 to 5.9 GHz with a gain of 43 dB and an output power of 10 Watts. The amplifier uses a single supply voltage, is DC regulated and has reverse polarity protection and

Contextual Info: RF56265.0V, 4.9 GHz to 5.85GHz Power Amplifier RF5626 Proposed 5.0V, 4.9 GHz TO 5.85GHz POWER AMPLIFIER Package: Laminate Package, 10-pin, 4mm x 4mm x 0.975mm Input Match 10 1 RFIN Features VCC VCC 6 5 Interstage Match 7 PDET Interstage Match 8 Bias PDOWN

mmic AMPLIFIER x-band 10w

Abstract: P1006-FA power transistor mimix x-band XP1006-FA-0N00 x-band power amplifier I0004966
Contextual Info: 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin September 2008 - Rev 10-Sep-08 P1006-FA Features X-Band 10W Power Amplifier Flange Package 21.5 dB Large Signal Gain +40.5 dBm Saturated Output Power 37% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing

OMMIC

Abstract: CGY2110 CGY2110UH OC192 STM-64 LB/LM358 RF receiver module
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2110 /C1 10 Gb/s Transimpedance Amplifier Preliminary Specification Supersedes data of Dec. 1998 File under Integrated Circuits, IC19 2000 Feb 11 Philips Semiconductors Preliminary Specification 10 Gb/s Transimpedance Amplifier

GHz Technology

Contextual Info: SNA-176 Product Description DC-10 GHz, Cascadable GaAs MMIC Amplifier Sirenza Microdevices’ SNA-176 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline package. At 1950 MHz, this amplifier provides 12dB of gain when biased at 50mA.

Contextual Info: SNA-100 Product Description DC-10 GHz, Cascadable GaAs MMIC Amplifier Sirenza Microdevices’ SNA-100 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 12dB of gain at 1950 MHz when biased at 50mA. These unconditionally stable amplifiers are designed for use

SNA-176

Abstract: SNA-100S SNA-186 DC-10 SNA-100 SNA SIRENZA
Contextual Info: SNA-100S Product Description DC-10 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SNA-100S is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 12.2dB of gain at 1950 MHz and 10.3dB at 10,000 MHz. These unconditionally stable amplifiers are designed for use

Contextual Info: SNA-100 Product Description DC-10 GHz, Cascadable GaAs MMIC Amplifier Sirenza Microdevices’ SNA-100 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 12dB of gain at 1950 MHz when biased at 50mA. OBSOLETE These unconditionally stable amplifiers are designed for use

XP1006-FA-0N00

Abstract: mmic AMPLIFIER x-band 10w MMIC X-band amplifier XP1006-FA
Contextual Info: XP1006-FA 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin Rev 01-Sep-10 RoHS Compliant Features • • • • • • X-Band 10W Power Amplifier Flange Package 21 dB Large Signal Gain +40 dBm Saturated Output Power 30% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: SNA-100S Product Description DC-10 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SNA-100S is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 12.2dB of gain at 1950 MHz and 10.3dB at 10,000 MHz. OBSOLETE These unconditionally stable amplifiers are designed for use

DC TO 18GHZ RF AMPLIFIER MMIC

Abstract: AMMC-5618 AMMC-6420
Contextual Info: AMMC - 6420 6 - 18 GHz Power Amplifier Data Sheet Chip Size: 2000 x 2000 µm 78.5 x 78.5 mils Chip Size Tolerance: ± 10 µm (±0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils) Description Features AMMC-6420 MMIC is a broadband 1W power amplifier

DC TO 18GHZ RF AMPLIFIER MMIC

Abstract: gold metal detectors AMMC-6345 AMMC-6425 vg 9612
Contextual Info: AMMC - 6425 18 - 28 GHz Power Amplifier Data Sheet Chip Size: 2500 x 1750 µm 100 x 69 mils Chip Size Tolerance: ± 10 µm (±0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils) Description Features The AMMC-6425 MMIC is a broadband 1W power amplifier

AMMC-5033

Abstract: TB 1238 An 17 25 04 ABLEBONd 84-1 gold metal detectors AMMC-5040 AMMC-5618 gold detector circuit free
Contextual Info: AMMC-5033 17.7 - 32 GHz Power Amplifier Data Sheet Chip Size: 2730 x 1300 µm 108 x 51.6 mils Chip Size Tolerance: ± 10 µm (±0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) Pad Dimensions: 80 x 80 µm (2.95 ± 0.4 mils) Description Features Avago’s AMMC-5033 is a MMIC power amplifier designed

AN0005

Abstract: CHA2066RBF RO4003
Contextual Info: CHA2066RBF 10-16GHz Self biased Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a two-stage self biased wide band monolithic low noise amplifier. • Broad band performance: 10-16GHz

Contextual Info: Whp1H EW LETT milKM PACKARD Avantek Products Surface Mount Cascadable Amplifier 10 to 500 MHz Technical Data PPA-557 Features Description Pin Configuration • F requency Range: 10 to 500 MHz The PPA-557 high-power, low voltage, medium gain RF amplifier containing discrete HP transistors

84-1LMI

Abstract: P1010
Contextual Info: 21.0-24.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1010 May 2006 - Rev 10-May-06 Features Excellent Linear Output Amplifier Stage 19.0 dB Small Signal Gain +30.0 dBm P1dB Compression Point +39.0 dBm Third Order Intercept OIP3

SNA-176 STANFORD

Abstract: SNA-176 176TR2
Contextual Info: Stanford Microdevices Product Description SNA-176 Stanford Microdevices’ SNA-176 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline package. This amplifier provides 12dB of gain when biased at 50mA and 4V. DC-10 GHz, Cascadable

84-1LMI

Abstract: ID130
Contextual Info: 17.0-21.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1009 May 2006 - Rev 10-May-06 Features Excellent Linear Output Amplifier Stage 20.0 dB Small Signal Gain +29.5 dBm P1dB Compression Point +38.0 dBm Third Order Intercept OIP3