AMPLIFICATION AUDIO Search Results

AD8668ARZ

Abstract: AD8648 AD8662 AD8666 AD8668 MO-187-AA MS-012-AA RU-14 AD8666ARMZ-R2
Contextual Info: 16 V, 4 MHz Rail-to-Rail Output Amplifier AD8666/AD8668 APPLICATIONS Sensor amplification Reference buffers Medical equipment Physiological measurements Signal filters and conditioning Consumer audio Photodiode amplification ADC driver Level shifting circuits

2SC5471

Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
Contextual Info: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN

Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

NESG2101M16

Abstract: NESG2101M16-T3 NESG2101M16-T3-A
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

NESG2101M16

Abstract: NESG2101M16-T3
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

microphone preamp

Abstract: preamp mic ic AN-450 LM4830 LM4830M LM4830N M24B N24A
Contextual Info: LM4830 Two-Way Audio Amplification System with Volume Control General Description Key Specifications The LM4830 is an integrated solution for two-way audio amplification. It contains a bridge-connected audio power amplifier capable of delivering 1W of continuous average power to

12v 100w AUDIO AMPLIFIER CIRCUIT

Abstract: 12v 100w amplifier 100w 12v POWER AMPLIFIER 100w audio amplifier pcb 100w 12V audio amplifier circuit 12v 100w amp audio amplifier 100W 5kw power amplifier 50W linear power amplifier 100W AUDIO AMP
Contextual Info: PC1353 LINEAR INTEGRATED CIRCUIT TV AUDIO PROCESSING CIRCUIT DESCRIPTION Contek PC1353 is designed for TV SIF signal amplification and audio power amplification purpose. It includes SIF amplifier, FM, frequency discriminator, DC volume control, 2.4W power amplifier and voltage regulator.

transistor T1J

Abstract: NESG2101M05-T1 NESG2101M05
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

transistor T1J

Abstract: T1J marking
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

Contextual Info: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

Contextual Info: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

PC1353

Abstract: 25KHZ 400HZ DIP-14H
Contextual Info: UTC PC1353 LINEAR INTEGRATED CIRCUIT TV AUDIO PROCESSING CIRCUIT DESCRIPTION UTC PC1353 is designed for TV SIF signal amplification and audio power amplification purpose. It includes SIF amplifier, FM, frequency discriminator, DC volume control, 2.4W power amplifier and voltage regulator.

AN-450

Abstract: LM4830 LM4830M LM4830N M24B N24A
Contextual Info: LM4830 Two-Way Audio Amplification System with Volume Control General Description Key Specifications The LM4830 is an integrated solution for two-way audio amplification. It contains a bridge-connected audio power amplifier capable of delivering 1W of continuous average power to

sta339

Abstract: STA339BW STA335ML STA339BWS STA559BWS STA520B STA533 audio limiter ic STA321 STA529
Contextual Info: FFX: Full flexible amplification The world’s highest efficiency class D amplifiers enabling audio application convergence March 2009 www.st.com/audio FFX: Full flexible amplification STMicroelectronics takes a step forward in the audio digital domain, enlarging the Sound TerminalTM product family

marking VB

Abstract: NPN Silicon Epitaxial Planar Transistor 2SC3930W 2SA1532 marking code vc sot sot-323 transistor marking code 15 AM SOT-323
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High transition frequency fT. z Optimum for RF amplification of 2SC3930W Pb Lead-free FM/AM radios. z For high-frequency amplification complementary to 2SA1532.

NEC JAPAN

Abstract: NESG3031M14 NESG3031M14-T3
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification

Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain amplification

AN-450

Abstract: C1996 LM4830 LM4830M LM4830N M24B N24A
Contextual Info: LM4830 Two-Way Audio Amplification System with Volume Control General Description Key Specifications The LM4830 is an integrated solution for two-way audio amplification It contains a bridge-connected audio power amplifier capable of delivering 1W of continuous average power to an 8X load with less than 1% THD from a 5V power

nec 2501

Abstract: ic nec 2501 NESG250134 2501 NEC
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • This product is suitable for medium output power (800 mW) amplification

2SC3603

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise

NEC K 2500

Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise

2SC1223

Abstract: 2SC2150 2SC2367 NEC NE "micro x" d 2SC2585 2SC3604 NEC NE "micro x" 2SC2148 NE AND micro-X 2SC2149
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and

nec 2501

Abstract: NESG240034 ic nec 2501 2501 nec
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG240034 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD 34 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.