diodes V3F
Abstract: mitsubishi weekly code mitsubishi production year 47K variable resistor M52765FP TP10 mitsubishi Lot No. Year code
Contextual Info: MITSUBISHI ICs TV M52765FP PLL-SPLIT VIF/SIF IC INTEGRATED CIRCUIT M52765FP 1 . Model Number : VIF amplification, Picture detection, APC detection, IF / RF AGC, VCO, AFT, Lock detection, Analog SW, SIF amplification, QIF amplification, QIF detection, QIF AGC, SIF limiter, FM detection.
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m52765fpg46509875mhz25mhz+6diodes v3fmitsubishi weekly codemitsubishi production year47k variable resistortp10mitsubishi lot no. year code
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AD8668ARZ
Abstract: AD8648 AD8662 AD8666 AD8668 MO-187-AA MS-012-AA RU-14 AD8666ARMZ-R2
Contextual Info: 16 V, 4 MHz Rail-to-Rail Output Amplifier AD8666/AD8668 APPLICATIONS Sensor amplification Reference buffers Medical equipment Physiological measurements Signal filters and conditioning Consumer audio Photodiode amplification ADC driver Level shifting circuits
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ad8666/ad8668ad866614-leadad8668arz+7ad8648ad8662ad8668mo-187-aams-012-aaru-14ad8666armz-r2
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2SC5471
Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
Contextual Info: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN
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2sc18152sa10152sc24582sa1048+162sc22402sa9702sc24592sa1049a15872sc41172sc54712sc58532sa1015 transistor2sc1815 transistor2sa970 transistor2sc5854transistor 2sc18152sc5720 transistor2sc5766low-frequency low-noise pnp transistor
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Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M16
Abstract: NESG2101M16-T3 NESG2101M16-T3-A
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M16
Abstract: NESG2101M16-T3
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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microphone preamp
Abstract: preamp mic ic AN-450 LM4830 LM4830M LM4830N M24B N24A
Contextual Info: LM4830 Two-Way Audio Amplification System with Volume Control General Description Key Specifications The LM4830 is an integrated solution for two-way audio amplification. It contains a bridge-connected audio power amplifier capable of delivering 1W of continuous average power to
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lm4830microphone preamppreamp mic ican-450+4lm4830mlm4830nm24bn24a
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12v 100w AUDIO AMPLIFIER CIRCUIT
Abstract: 12v 100w amplifier 100w 12v POWER AMPLIFIER 100w audio amplifier pcb 100w 12V audio amplifier circuit 12v 100w amp audio amplifier 100W 5kw power amplifier 50W linear power amplifier 100W AUDIO AMP
Contextual Info: PC1353 LINEAR INTEGRATED CIRCUIT TV AUDIO PROCESSING CIRCUIT DESCRIPTION Contek PC1353 is designed for TV SIF signal amplification and audio power amplification purpose. It includes SIF amplifier, FM, frequency discriminator, DC volume control, 2.4W power amplifier and voltage regulator.
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pc1353dip-14htypical80db400hz+1325khz10mvrms50x5012v 100w audio amplifier circuit12v 100w amplifier100w 12v power amplifier100w audio amplifier pcb100w 12v audio amplifier circuit12v 100w ampaudio amplifier 100w5kw power amplifier50w linear power amplifier100w audio amp
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transistor T1J
Abstract: NESG2101M05-T1 NESG2101M05
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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transistor T1J
Abstract: T1J marking
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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sta338
Abstract: digital to analog tv converter ic STA321 4x50W 2.1 ch audio amplifiers Karaoke Processor IC STA558 STA330 STA331 STA510F
Contextual Info: FFX: Full flexible amplification The world highest efficiency class D amplifiers enabling audio application convergence January 2008 www.st.com/audio FFX: Full flexible amplification STMicroelectronics sets a step forward in the audio digital domain, enlarging the Sound TerminalTM products family
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brffx0108sta338digital to analog tv converter icsta321+74x50w2.1 ch audio amplifierskaraoke processor icsta558sta330sta331sta510f
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Contextual Info: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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Contextual Info: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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RG508
Abstract: PC1353 v10-20 400HZ if audio amplifier 16 dip Datasheet V10-20 25KHZ DIP-14H I-10A
Contextual Info: UTC PC1353 LINEAR INTEGRATED CIRCUIT TV AUDIO PROCESSING CIRCUIT DESCRIPTION UTC PC1353 is designed for TV SIF signal amplification and audio power amplification purpose. It includes SIF amplifier, FM, frequency discriminator, DC volume control, 2.4W power amplifier and voltage regulator.
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pc1353dip-14htypical80db30mvrms+10400hz25khz10mvrms50x50qw-r111-002rg508v10-20if audio amplifier 16 dipdatasheet v10-20i-10a
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AN-450
Abstract: LM4830 LM4830M LM4830N M24B N24A
Contextual Info: LM4830 Two-Way Audio Amplification System with Volume Control General Description Key Specifications The LM4830 is an integrated solution for two-way audio amplification. It contains a bridge-connected audio power amplifier capable of delivering 1W of continuous average power to
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sta339
Abstract: STA369BWS STA539 STA339BW sta520b sta533 200w audio amplifier circuit diagram Karaoke Processor IC audio output ic sharp micro component system STA533WF
Contextual Info: FFX: Full flexible amplification The world’s highest efficiency class-D amplifiers enabling audio application convergence February 2010 www.st.com/audio FFX: Full flexible amplification STMicroelectronics takes a step forward in the audio digital domain, enlarging the Sound TerminalTM product family
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sta369bwsbrffx0210sta339sta539+7sta339bwsta520bsta533200w audio amplifier circuit diagramkaraoke processor icaudio output ic sharp micro component systemsta533wf
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sta339
Abstract: STA339BW STA335ML STA339BWS STA559BWS STA520B STA533 audio limiter ic STA321 STA529
Contextual Info: FFX: Full flexible amplification The world’s highest efficiency class D amplifiers enabling audio application convergence March 2009 www.st.com/audio FFX: Full flexible amplification STMicroelectronics takes a step forward in the audio digital domain, enlarging the Sound TerminalTM product family
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Contextual Info: UTC PC1353 LINEAR INTEGRATED CIRCUIT TV AUDIO PROCESSING CIRCUIT DESCRIPTION UTC PC1353 is designed for TV SIF signal amplification and audio power amplification purpose. It includes SIF amplifier, FM, frequency discriminator, DC volume control, 2.4W power amplifier and voltage regulator.
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marking VB
Abstract: NPN Silicon Epitaxial Planar Transistor 2SC3930W 2SA1532 marking code vc sot sot-323 transistor marking code 15 AM SOT-323
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High transition frequency fT. z Optimum for RF amplification of 2SC3930W Pb Lead-free FM/AM radios. z For high-frequency amplification complementary to 2SA1532.
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2sc3930w2sa1532ot-323bl/ssstf036+5marking vbnpn silicon epitaxial planar transistormarking code vc sotsot-323 transistor marking code 15am sot-323
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NEC JAPAN
Abstract: NESG3031M14 NESG3031M14-T3
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification
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Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain amplification
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AN-450
Abstract: C1996 LM4830 LM4830M LM4830N M24B N24A
Contextual Info: LM4830 Two-Way Audio Amplification System with Volume Control General Description Key Specifications The LM4830 is an integrated solution for two-way audio amplification It contains a bridge-connected audio power amplifier capable of delivering 1W of continuous average power to an 8X load with less than 1% THD from a 5V power
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nec 2501
Abstract: ic nec 2501 NESG250134 2501 NEC
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • This product is suitable for medium output power (800 mW) amplification
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