AMP. 100 WATT FET Search Results

Contextual Info: Power Management Group RADIATION HARDENED ISOLATED DC/DC CONVERTERS SA50-120-5/15T 50 Watts Total Power +5Vdc±15Vdc Triple Output Microsemi Power Management Group PMG multiple decades of fault free heritage complex custom (radiation hardened) switching power design and systems

Contextual Info: PRELIMINARY GOLDMOS Field Effect Transistor 90 Watt, DCS/PCS Band PTF 102098* Description Key Features The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P-1dB and 14.5 dB linear gain. Full gold metallization

Contextual Info: ANALOG DEVICES □ Low Power, Low Noise Precision FET Op Amp AD795 FEATURES Low Power Replacement for Burr-Brown OPA-111, OPA-121 Op Amp and Tl TLC 2201 Low Noise 2.5 JiV p-p max, 0.1 Hz to 10 Hz 10 n V /V H z max at 10 kHz 0.6 fA /V H z at 1 kHz High DC Accuracy

Amp. mosfet 1000 watt

Abstract: transformer less power supply 12 volt 3A 1000 watt ferrite transformer mathcad flyback design Amp. mosfet 500 watt mosfet 1000 amper transistor m 9587 Diode fast 8 amper RM6S/CSVS-RM6S/LP-1S-8P Switchmode power supply handbook
Contextual Info: SWITCHING POWER SUPPLY DESIGN: CONTINUOUS MODE FLYBACK CONVERTER Written by Michele Sclocchi michele.sclocchi@nsc.com Application Engineer National Semiconductor Typical Flyback power supply: D4 N=18T C10 220p R5 10 16V D2 R1 49.9K N=6T D5 D3 Q1 20 - 55V N=18T

transistor 603

Abstract: transistor smd 303 circuit diagram of rfid gate SLD-2083
Contextual Info: SLD-2083CZ Product Description Pb RoHS Compliant & Green Package 12 Watt Discrete LDMOS FET in Ceramic Package Sirenza Microdevices’ SLD-2083CZ is a robust 12 Watt high performance LDMOS transistor designed for operation to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at

transistor smd 303

Abstract: LL1608-F4N7K CONNECTOR SMA 905 drawing SLD-2083 0603CS delta LL1608-F2N7S 80021 Amp. 100 watt fet pot 100K smd SLD-2083CZ
Contextual Info: SLD-2083CZ Product Description Pb RoHS Compliant & Green Package 12 Watt Discrete LDMOS FET in Ceramic Package Sirenza Microdevices’ SLD-2083CZ is a robust 12 Watt high performance LDMOS transistor designed for operation to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at

SLD-2083CZ

Abstract: 915 MHz RFID SLD2083CZ GaN Bias 25 watt j20 Schematic InP transistor HEMT transistor BJT Driver smd transistor ne c2
Contextual Info: SLD-2083CZ SLD-2083CZ 12 Watt Discrete LDMOS FET in Ceramic Package 12 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS Package: RF083 Product Description Features „ „ „ 12 Watt Output P1dB Single Polarity Supply Voltage High Gain: 18 dB at 915 MHz

SLD-1083CZ

Abstract: GaN Bias 25 watt SLD1083CZ InP transistor HEMT 600S680JT250XT
Contextual Info: SLD-1083CZ SLD-1083CZ 4 Watt Discrete LDMOS FET in Ceramic Package 4 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: RF083 Product Description Features „ „ „ 4 Watt Output P1dB Single Polarity Supply Voltage

4712 mosfet

Abstract: Amp. mosfet 500 watt 50 Amp 100 volt mosfet 300 watt mosfet amplifier mosfet 4712 switching power supply design 50 Watt MOSFET amplifier mathcad buck INDUCTOR DESIGN AN-1197 LM5642
Contextual Info: SWITCHING POWER SUPPLY DESIGN: PWM Current Mode, Dual Synchronous Buck Converter: LM5642 Michele Sclocchi michele.sclocchi@nsc.com National Semiconductor Notes: Write down the power supply requirements on : Get the results on: Xxx := Rsults xx := This Mathcad file helps the calculation of the external components dual synchronous buck

AD796

Abstract: 7915 pin configuration AD795 AD795K AD79S AD795B AD795BH AD795AH Q81, 1K, 3500 ppm 2265 8pin
Contextual Info: ANALOG DEVICES INC 51E » A N A LO G D E V IC E S OaibfiOO 0Q3bl32 b4b • ANA Low Power, Low Noise Precision FET Op Amp AD795 □ FEATURES Low Power Replacement for Burr-Brown OPA-111, OPA-121 Op A m p and Tl TLC 2201 Low Noise 2.5 JiV p -p m ax, 0.1 Hz to 10 Hz

SLD3091FZ

Abstract: T85 55
Contextual Info: Preliminary SLD-3091FZ Pb RoHS Compliant & Green Package 30 Watt Discrete LDMOS FET in Ceramic Flanged Package Product Description Sirenza Microdevices’ SLD-3091FZ is a robust 30 Watt high performance LDMOS transistor designed for operation from 10 to 1600MHz. It is an

915 MHz RFID

Abstract: 22UF 27PF SLD-3091FZ t85 key SLD3091FZ SLD3091
Contextual Info: Preliminary SLD-3091FZ Pb RoHS Compliant & Green Package 30 Watt Discrete LDMOS FET in Ceramic Flanged Package Product Description Sirenza Microdevices’ SLD-3091FZ is a robust 30 Watt high performance LDMOS transistor designed for operation from 10 to 2200MHz. It is an

AD796

Abstract: AD796AN
Contextual Info: ANALOG DEVICES □ Dual Low Power, Low Cost, Precision FET Op Amp AD796 FEATURES Low Noise 2.5 jj.V p-p max, 0.1 Hz to 10 Hz 10 n V /V H z max at 10 kHz 14 fA p-p Current Noise 0.1 Hz to 10 Hz High DC Accuracy 300 n.V max Offset Voltage 3 jlV / ° C max Drift

IC 741 OPAMP

Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Contextual Info: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte

Contextual Info: PRELIMINARY GOLDMOS Field Effect Transistor 180 Watts, 2110-2170 MHz PTF 102022* Description Key Features The PTF 102022 is a 180–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. A laterally double-diffused push-pull FET, it operates with 13.5 dB linear gain. Full gold metallization

Contextual Info: Low Noise, Low Drift FET Op Amp ANALOG DEVICES FEATURES Improved Replacement for Burr-Brown OPA-111 and OPA-121 Op Amp LOW NOISE 2 |¿V p -p max, 0.1 Hz to 10 Hz 10 n V /V fiz max at 10 kHz 11 f A p-p Current Noise 0.1 Hz to 10 Hz CONNECTION DIAGRAMS 8-Pio Plastic Mini-DIP

SLD-3091FZ

Abstract: SLD3091FZ GaN Bias 25 watt InP transistor HEMT 915 MHz RFID 27PF A191 22UF
Contextual Info: SLD-3091FZ 30 Watt Discrete LDMOS FET in Ceramic Flanged Package SLD-3091FZ Preliminary 30 WATT DISCRETE LDMOS FET IN CERAMIC FLANGED PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: A191 Product Description Features „ „ „ 30 Watt Output P1dB

Contextual Info: SA50-28 Triple Series RADIATION HARDENED ISOLATED DC/DC CONVERTERS SA50-28-5-15T 50 Watts Total Power 5V, +/- 12Vdc, Triple Output DESCRIPTION The SA series of DC-DC converters are designed for the rigors of space, characterized for Total Ionizing Dose and Single Event Effects. Operating at a fixed frequency of 220

ph probe amplifier

Contextual Info: a Low Noise, Low Drift FET Op Amp AD645 FEATURES Improved Replacement for Burr-Brown OPA-111 and OPA-121 Op Amp CONNECTION DIAGRAMS TO-99 H Package 8-Pin Plastic Mini-DIP (N) Package CASE LOW NOISE 2 ␮V p-p max, 0.1 Hz to 10 Hz 10 nV/√Hz max at 10 kHz

ad6451

Abstract: SO108
Contextual Info: a Low Noise, Low Drift FET Op Amp AD645 FEATURES Improved Replacement for Burr-Brown OPA-111 and OPA-121 Op Amp LOW NOISE 2 ␮V p-p max, 0.1 Hz to 10 Hz 10 nV/√Hz max at 10 kHz 11 fA p-p Current Noise 0.1 Hz to 10 Hz CONNECTION DIAGRAMS TO-99 H Package

Contextual Info: BACK a Low Noise, Low Drift FET Op Amp AD645 FEATURES Improved Replacement for Burr-Brown OPA-111 and OPA-121 Op Amp LOW NOISE 2 ␮V p-p max, 0.1 Hz to 10 Hz 10 nV/√Hz max at 10 kHz 11 fA p-p Current Noise 0.1 Hz to 10 Hz CONNECTION DIAGRAMS TO-99 H Package

Q81, 1K, 3500 ppm

Abstract: c1398 op amp ad645 AD645JN 8c 617 transistor AD645 AD645A AD645B AD645C AD645J
Contextual Info: a Low Noise, Low Drift FET Op Amp AD645 FEATURES Improved Replacement for Burr-Brown OPA-111 and OPA-121 Op Amp LOW NOISE 2 ␮V p-p max, 0.1 Hz to 10 Hz 10 nV/√Hz max at 10 kHz 11 fA p-p Current Noise 0.1 Hz to 10 Hz CONNECTION DIAGRAMS TO-99 H Package

MYXJ11200-34CAB

Abstract: silicon carbide
Contextual Info: Silicon Carbide J-FET Normally On 1200 Volt 34 Amp Hermetic MYXJ11200-34CAB Product Overview Features y r a in Benefits • High voltage 1200V • Low on resistance RDS On • High current 34A • Voltage controlled • High temperature 175°C • Low gate charge

Contextual Info: PRELIMINARY GOLDMOS Field Effect Transistor 45 Watts, 2110-2170 MHz Description Key Features The PTF 102088 is a 45–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110-2170 MHz. This device typically operates at 47% efficiency at P-1dB with a linear gain of