AMH Search Results

SC35D

Contextual Info: >4M C C PENTIUM A PPLICA TIO N NOTE Clock Design In Intel Pentium Processor Systems using the SC3508 M.K. Williams Owner/Principal Consultant Amherst Systems Associates 1. INTRODUCTION The Pentium processor is the latest, high-perfor­ mance entry In the X86 microprocessor family

Intel Pentium 66MHz 1993

Contextual Info: w4MCC PENTIUM A P P L IC A T IO N NOTE Clock Design in Intel Pentium Processor Systems using the SC3508 M.K. Williams Owner/Principal Consultant Amherst Systems Associates 1. INTRODUCTION The Pentium processor is the latest, high-perfor­ mance entry in the X86 microprocessor family

hmtr

Abstract: YXA 50V
Contextual Info: TPHO^-rEIlT O # TRIODE-HEPTODE OBIUHE CBE^EHHfl GENERAL TpHoa-renToa c kopotkoh xapaKTepHCTHKOH, c pa3- aejibHMMH KaTo^aMH 6H4II npe,gHa3HaHeH ansi ncnojib30BaH H H a n 0 M e x 0 3 a m H m e H H 0 M aM irjiHTy,n.HOM ce jie ic T O p e H yCHJIHTeJie CHHXpOHMnyjIbCOB TejieBH3HOHHHX

Contextual Info: 042 AHH-ELB, 043 AHH-ELB www.vishay.com Vishay BCcomponents Aluminum Capacitors Axial High Temperature High Voltage for E.L.B. FEATURES 041-043 ASH 042/043 AHH-ELB 550 V/24 h standard 042/043 AMH-ELB 550 V/24 h 85 °C Fig. 1 • Useful life: 10 000 h at 105 °C

REMEC Magnum

Abstract: AMHV2000-90 Remec Broadband Wireless AMHH2000-30 AMHH2000-45 AMHH2000-60 AMHH2000-90 AMHV2000-30 AMHV2000-45 AMHV2000-60
Contextual Info: BROADBAND WIRELESS PRODUCTS SectorShape  Series AMH2000 3.5 GHz Wireless Access Hub Antennas Cosecant Squared Null filled Pattern REMEC Magnum Hub antennas are designed using a highly automated process that takes advantage of advanced EM analysis and artificial intelligence to provide

Remec Broadband Wireless

Abstract: AMHH3000-30 AMHH3000-45 AMHH3000-60 AMHH3000-90 AMHV3000-30 AMHV3000-45 AMHV3000-60 AMHV3000-90 REMEC Magnum
Contextual Info: BROADBAND WIRELESS PRODUCTS SectorShape  Series AMH3000 5.8 GHz Wireless Access Hub Antennas Cosecant Squared Null filled Pattern Description FEATURES REMEC Magnum Hub antennas are designed using a highly automated process that takes advantage of advanced EM analysis and artificial

IC 2025

Abstract: U405DH
Contextual Info: S T U405DH S amHop Microelectronics C orp. Nov,20 2007 ver1.0 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 40V 11A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V - 9A

Contextual Info: 042/043 AMH-ELB Vishay BCcomponents Aluminum Capacitors Axial Miniature High Voltage for E.L.B. FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte Fig.1 Component outline 041-043 ASH standard HV 042/043 AMH-ELB 042/043 AHH-ELB 105 °C

vishay AXIAL ELECTROLYTIC capacitors

Contextual Info: 042/043 AMH-ELB Vishay BCcomponents Aluminum Capacitors Axial Miniature High Voltage for E.L.B. FEATURES Fig.1 Component Outlines 041-043 ASH standard HV 042/043 AMH-ELB 105 °C 042/043 AHH-ELB • Polarized aluminum electrolytic capacitors, Pb-free non-solid electrolyte.

Contextual Info: 042/043 AMH-ELB Vishay BCcomponents Aluminum Capacitors Axial Miniature High Voltage for E.L.B. FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte Fig.1 Component outline 041-043 ASH standard HV 042/043 AMH-ELB 042/043 AHH-ELB 105 °C

vishay AXIAL ELECTROLYTIC capacitors

Abstract: 043 AHH-ELB
Contextual Info: 042/043 AHH-ELB Vishay BCcomponents Aluminum Capacitors Axial High Temperature High Voltage for E.L.B. FEATURES Fig.1 Component Outlines. 041-043 ASH 042/043 AHH-ELB 550 V/24 hours standard 042/043 AMH-ELB 550 V/24 hours 85 °C • Polarized aluminum electrolytic capacitors,

vishay AXIAL ELECTROLYTIC capacitors

Contextual Info: 042/043 AMH-ELB Vishay BCcomponents Aluminum Capacitors Axial Miniature High Voltage for E.L.B. FEATURES Fig.1 Component Outlines 041-043 ASH standard HV 042/043 AMH-ELB 105 °C 042/043 AHH-ELB • Polarized aluminum electrolytic capacitors, Pb-free non-solid electrolyte.

HH-1174-10

Abstract: 030-31
Contextual Info: JMK. Inc. USA JMK Inc 15 Caldwell Dr. Amherst, NH 03031 EUR JMK Inc Glasgow G13 1DN Scotland UK HH-1174-10 PH: 603 886-4100 FX: 603 886-4115 email: info@jmkfilters.com PH: 44- 0 7785310729 FX: 44-(0) 141-589-1884

ZG-1589-18

Abstract: ZG15
Contextual Info: ZG-1589-18 Operating Voltage = 12 Vdc Operating Current = 18 Amperes Operating Temperature Range = -40 to 50 C Order P/N: ZG-1589-18 USA JMK Inc 15 Caldwell Dr. Amherst, NH 03031 EUR JMK Inc Glasgow G13 1DN Scotland UK The ZG-1589-18 is a P.A.amplifier.Intended for mobile

mobile microphone

Abstract: zg163318
Contextual Info: ZG-1633-18 Operating Voltage = 12 Vdc Operating Current = 18 Amperes Operating Temperature Range = -40 to 50 C Order P/N: ZG-1633-18 USA JMK Inc 15 Caldwell Dr. Amherst, NH 03031 EUR JMK Inc Glasgow G13 1DN Scotland UK The ZG-1633-18 is a P.A.amplifier.Intended for mobile

Remec Broadband Wireless

Abstract: Remec wireless sectorshape
Contextual Info: SectorShape  REMEC BROADBAND WIRELESS Wireless Access Hub Antennas Series AMHV2500 FEATURES • 2150 to 2700 MHz Coverage • 60° sector angle, others available • Very low spillover into adjacent cells • Mates easily to telecom poles, 2.5” to

Contextual Info: S T S 2306 S amHop Microelectronics C orp. Apr,21 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.

M6930A

Abstract: stm6930a Z620
Contextual Info: S T M6930A S amHop Microelectronics C orp. Aug,18 2005 ver1.3 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.

Contextual Info: S T G 2507 S amHop Microelectronics C orp. May,10 2005 Dual P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( mW ) Max R ugged and reliable. 17 @ V G S = -4.5V

M8450A

Abstract: diode AR S1 77 M845
Contextual Info: S T M8450A S amHop Microelectronics C orp. J an.23 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 40V 5A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -4A R DS (ON) ( m W )

U405D

Abstract: STU405D 2525l
Contextual Info: S T U405D S amHop Microelectronics C orp. Nov,24 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 40V 16A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m W )

9906V

Abstract: 660 tg diode s608
Contextual Info: S DS 9906 S amHop Microelectronics C orp. J UL. 30 2004 v1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable. 60 @ V G S = 4V

MT 2800 N

Contextual Info: S T M4437 S amHop Microelectronics C orp. Aug.18 2004 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S ID -30V -10A R DS ON F E AT UR E S S uper high dense cell design for low R DS (ON ). ( m W ) Max 13 @ V G S = -20V R ugged and reliable.

Contextual Info: S T M4800A S amHop Microelectronics C orp. Dec 30 2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 18.5 @ V G S = 10V