AMD AM29F016B Search Results

AM26LS31SC

Abstract: AM27C512-150DC AM26LS33PC AM27C010-120DC AM26LS30PC AM29F400BT am29f040b AM27C512-90DC X9312WP AM27C64-120DC
Contextual Info: AMD Advanced Micro Devices Memory, Drivers, Receivers and Potentiometers http://www.amd.com/ Visit Advanced Micro Devices web site to learn about their latest products, obtain data sheets and literature. AMD Literature Support: 1-800-222-9323 To obtain literature, call Advanced Micro Devices Literature Support.

AM29F040B date code marking information

Abstract: AM29F040B PART MARKING marking CODE SA2 marking AM29F040B SA29 170000H Am29LV200BB sa29 pinout 00000H Am29LV002T
Contextual Info: ExpressFlashTM Code Approval Form Section 1: CODE TRANSMITTAL AND ORDERING INFORMATION SECTION Date _ CUSTOMER INFORMATION 1. Company Name _ 2. Customer Contact Name _ 3. Contact’s Phone No. _ 4. AMD Salesperson _

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29F016U08SJ08-XX 8MB FLASH SIMM, based on AMD Am29F016B Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29F016U08SJ08-XX is a 5.0V flash memory SIMM, composed of four CMOS 16Mbit

20.000H

Abstract: 00000H AM29F010
Contextual Info: ExpressFlashTM KGD Code Approval Form Section 1: CODE TRANSMITTAL AND ORDERING INFORMATION SECTION Date _ CUSTOMER INFORMATION 1. Company Name _ 2. Customer Contact Name _ 3. Contact’s Phone No. _ 4. AMD Salesperson _

AM29F016B-S

Contextual Info: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V +10% , single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 |jm process technology

Contextual Info: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C

AM29 FLASH

Abstract: AN1185 Lot code M29F010B M29F040B M29F002B M29F010B M29F200B M29F400B M29W008A M29W010B
Contextual Info: AN1185 APPLICATION NOTE Designing for Compatibility between ST and AMD Flash Memories CONTENTS • INTRODUCTION ■ FLASH MEMORY TECHNOLOGY COMPARISON ■ PORTABILITY ISSUES ■ DEVICE AND MANUFACTURER CODES ■ PART NUMBERS ■ EQUIVALENT PART NUMBERS ■

100Nm

Abstract: AMD 21551
Contextual Info: S U P P LLT .1EH] AMD£I Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory- -Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements

Contextual Info: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single pow er supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C

Contextual Info: AMD* Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision t DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Minimum 100,000 write/erase cycles guaranteed

AM29 FLASH

Abstract: "NOR Flash" intel retention amd nor flash LOT code stmicroelectronics AM29 AMD part numbering Lot code M29F010B M29F010B Lot code M29F040 M29F040B
Contextual Info: AN1185 APPLICATION NOTE Designing for Compatibility between ST and AMD Flash Memories CONTENTS • INTRODUCTION ■ FLASH MEMORY TECHNOLOGY COMPARISON ■ PORTABILITY ISSUES ■ DEVICE AND MANUFACTURER CODES ■ PART NUMBERS ■ EQUIVALENT PART NUMBERS ■

AM29F032B 04h

Abstract: 19945 AM29F010
Contextual Info: Am29Fxxx, 5.0 Volt-only Flash AMD* Device Bus Operations, Command Definitions, and Write Operations Status INTRODUCTION This section contains descriptions about the device bus operations, command definitions, and write operation status of the Am29Fxxx, 5.0 volt-only family of Flash

Contextual Info: AMD A m 2 9 F 0 1 6 B 15 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 pm process technology

AM29F016D-120

Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F016D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: Am29F016D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

AM29F017D-120

Abstract: AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F017D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

diode e4f

Abstract: mark E4K AM29F017D-120 AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F017D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: PRELIMINARY AMD£I A m 2 9 F 0 1 6 B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35|im process technology

TSOP 14l

Abstract: am29f016b-90 A20-A11
Contextual Info: PRFUivllNAR AMD£1 A m 2 9 F 0 1 6 B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35|im process technology

Contextual Info: Am29F017D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

AM29F010

Abstract: Am29F002N
Contextual Info: AMD SI P R E L I M I N A R Y ERASE AND PROGRAMMING PERFORMANCE Parameter Typ Note 1 Max (Note 2) Unit 1 8 sec 32 256 sec 7 300 US 14.4 43.2 sec Sector Erase Time Chip Erase Time Byte Programming Time Chip Programming Time (Note 3) Comments Excludes OOh programming prior to

25820

Abstract: AM29F016B
Contextual Info: SUPPLEMENT Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 µm process technology

25820

Abstract: AM29F016B Die Attach and Bonding Guidelines AM29F016B KNOWN GOOD known good die AMD AMD 21551
Contextual Info: SUPPLEMENT Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 µm process technology

known good die AMD

Abstract: ACN2016 AMD 21551
Contextual Info: SUPPLEMENT Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 2 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology