AMD AM28F010 CA Search Results

Contextual Info: AMD£I Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — One second typical chip-erase — 70 ns maximum access time ■ CMOS Low power consumption Flashrite Programming

Contextual Info: & Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ — 90 ns maximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase

Contextual Info: a Preliminary Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time ■ Low power consumption - 30 mA maximum active current - 1 0 0 nA maximum standby current ■

Contextual Info: FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 (iA maximum standby current

data programmers DIP PLCC

Abstract: AMD 478 socket pinout
Contextual Info: ADV MICRO MEMORY BÖE •.G2S?SSfl QGETÖBQ S ■ A M » 4 a Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memoty DISTINCTIVE CHARACTERISTICS ■ High performance - 9 0 ns maximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc+1 V

Contextual Info: FI NA! AMDB Am28F010 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 nA maximum standby current

EE-21

Abstract: 28F010P
Contextual Info: a FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 |iA maximum standby current

Contextual Info: Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 nA maximum standby current

AM28F010

Contextual Info: FINAL Am28F010 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase

Contextual Info: FINAL AMD£I A m 2 8 F 0 1 0 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ — 10 |is typical byte-program — 100 |iA maximum standby current

28F010

Abstract: AM28F010 AMD 478 socket pinout
Contextual Info: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption

Contextual Info: FINAL AMD£I A m 2 8 F 0 1 0 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ — 10 ps typical byte-program — 100 pA maximum standby current

Contextual Info: F IN A L AM Dû A m 2 8 F 0 1 0 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance — 70 ns maximum access time ■ CMOS Low power consumption — One second typical chip-erase ■ — 10

AMD Flash Memory

Contextual Info: Section 4 Advantages of AM D’s 12.0 V Flash Mem ory Fam ily AM D’s Flash Mem ories Create a Defacto Industry Standard AMD is the first company to address the issue of device compatibility. In the world of Flash memories today, no two device offerings can be used as 100% compatible alter­

Am29F020

Abstract: gang capacitor AD519 dead bug at29lv010 PM39LV512R ce2231 28F020T en29f002nt datasheet SST49LF002A
Contextual Info: PRODUCT DATA SHEET AD48 479-925 / AD49 / AD519 (412-7675) Package Converters for E(E)PROMs and FLASH etc 48 pin TSOP Product Code Pins on skt Pins on Base Wiring Code Package Base pitch" Miscellaneous AD48 32 32 01 TS .6 GANG Product Code Pins on skt Pins on Base

Contextual Info: Advanced Micro Devices A m 2 8 F 0 1 0 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS I High perform ance - 90 ns m aximum access tim e Latch-up protected to 100 mA from -1 V to Vcc +1 V • CM OS Low pow er consum ption - 30 m A m aximum active current

ae29F2008

Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
Contextual Info: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.

AMD AM28F010 ca

Abstract: AM29 flash 48-pin TSOP package tray tsop 48 PIN SOCKET pin identification AMD 2m flash memory Meritec Am29LV033B AM29F010 Am29F002N AM29F002
Contextual Info: Flash Memory Quick Reference Guide Summer ’98 Package Migration Low-Voltage Am29LV004 Am29LV008B Am29LV081 Am29LV116B Am29LV017B 2 Mb 4 Mb 8 Mb 16 Mb Am29LV010B Am29LV001B Am29LV020B Am29LV102B Am29LV040B Am29LV104B 1 Mb 2 Mb 4 Mb Am29LV200 Am29DL400B Am29LV400

atmel 24c16a

Abstract: ST93C86 EPROM AMD D87C257 atmel 93c66A ATMEL 24c64 39SF512 D27128 NEC P87LPC7648 GAL16AS
Contextual Info: GALEP-III Device List 2000-01-31 valid for version 1.17 page 1 of 1 D:\btl117.doc EPROM AMD AM27C010 AM27C020 AM27C040 AM27C080 AM27C1024 AM27C128 AM27C2048 AM27C256 AM27C4096 AM27C512 AM27C64 ATMEL AT27C/LV/BV010 AT27C/LV/BV020 AT27C/LV/BV040 AT27C/LV/BV256

PM9006

Contextual Info: _ a _ Considerations for In-System Programming BASIC PRINCIPLES AMD Flash memories use 100% TTL-level control In­ puts to manage the command register. Erase and re­ programming operations use a fixed 12.0 V +0.6 V power supply. Read Only Memory Without high Vpp voltage, the Flash memory functions

ST93C86

Abstract: d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS
Contextual Info: GALEP 4 - device support for GALEP32 software version 1.14.12 ! Bauteile im DIL Gehäuse benötigen keinen Adapter ! Devices in DIL package do not require any adapter -EEPROM

AM28F020

Contextual Info: f !NAL AMDH Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip Erase

Contextual Info: AMENDMENT AMD£I Am28F01 OA Data Sheet 1996 Flash Products Data Book/Handbook INTRODUCTION This am endm ent supersedes inform ation regarding the A m 28 F 010A device in the 1996 Flash P roducts Data B ook/H andbook, PID 11796D. This docum ent includes re p la ce m e n t p a g e s fo r the A m 2 8 F 0 1 0 A d a ta sheet,

Contextual Info: FINA: AM D ii A m 28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from ■ High performance -1 Vt oVc c +1V Embedded Erase Electrical Bulk Chip Erase