AMD 21551 Search Results

AMD 21551 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TPS53685RSBR		Texas Instruments	Eight-phase digital step-down multiphase controller with SVI3 and PMBus for AMD platform 40-WQFN -40 to 105
TPS536C5RSLR		Texas Instruments	12-phase digital step-down multiphase controller with SVI3 and PMBus for AMD platform 48-VQFN -40 to 105
91900-21551LF		Amphenol Communications Solutions	Conan® 1.00mm Pitch, Board To Board Connector, I - Industrial Series, Conan Vertical Header, Surface Mount, 51 Positions, 1.00mm (0.039in) Pitch	PDF
91911-21551LF		Amphenol Communications Solutions	Conan® 1.00mm Pitch, Board To Board Connector, I - Industrial Series, Vertical Header, Surface Mount, 51 Positions, 1.00mm ( 0.039in) Pitch.	PDF
91901-21551LF		Amphenol Communications Solutions	Conan® 1.00mm Pitch, Board To Board Connector, I - Industrial Series, Vertical Header, Surface Mount, 51 Positions.	PDF

AMD 21551 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C	OCR Scan	Am29F016B 20-year 29F016 44-pin	PDF
100Nm Abstract: AMD 21551 Contextual Info: S U P P LLT .1EH] AMD£I Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory- -Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements	OCR Scan	Am29F016B 100Nm AMD 21551	PDF
Contextual Info: AMD* Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision t DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Minimum 100,000 write/erase cycles guaranteed	OCR Scan	Am29F016B	PDF
AM29F016D-120 Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 Contextual Info: Am29F016D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	Am29F016D AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13	PDF
25820 Abstract: AM29F016B Contextual Info: SUPPLEMENT Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 µm process technology	Original	Am29F016B 25820	PDF
25820 Abstract: AM29F016B Die Attach and Bonding Guidelines AM29F016B KNOWN GOOD known good die AMD AMD 21551 Contextual Info: SUPPLEMENT Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 µm process technology	Original	Am29F016B 25820 Die Attach and Bonding Guidelines AM29F016B KNOWN GOOD known good die AMD AMD 21551	PDF
known good die AMD Abstract: ACN2016 AMD 21551 Contextual Info: SUPPLEMENT Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 2 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology	Original	Am29F016B ACN2016) known good die AMD ACN2016 AMD 21551	PDF
Contextual Info: SUPPLEM ENT Am29F016B Known Good Die AMDZ1 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 pm process technology	OCR Scan	Am29F016B	PDF
AM29F016D-120 Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 Contextual Info: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm	Original	Am29F016D Am29F016 Am29F016B AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13	PDF
amd AM29F016 Abstract: am29f016b-75 Contextual Info: Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F016 device	Original	Am29F016B Am29F016 amd AM29F016 am29f016b-75	PDF
AM29F016D-120 Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 Contextual Info: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm	Original	Am29F016D Am29F016 Am29F016B AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13	PDF
AM29F016D-120 Abstract: AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 SA14 SA15 Contextual Info: Am29F016D Data Sheet The Am29F016D is not offered for new designs. Please contact your Spansion representative for alternates. The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any	Original	Am29F016D 21444E5 AM29F016D-120 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 SA14 SA15	PDF