AM 128.2 Search Results

JA1SD3A003002E

Abstract: AM1R-D3-AC07D-A-10-2 JA2S-D3-A-0030-02E 006-10528 ja3s ja2s KD19
Contextual Info: 1285-2012.qxp:QuarkCatalogTempNew 8/31/12 10:10 AM Page 1285 14 Circuit Breakers ᭤ Designed to Meet IEC- 380, 435, 601, 7030, 0750 , VDE-(0804, 0806, 0660), UL and CSA (Various) ᭤ Current Protection to 1200 Amps, Voltage Capabilities to 125 VDC or 600 VAC

928 606 402 00

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low

Contextual Info: TOSHIBA TENTATIVE 3SK320 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK320 Unit in mm UHF BAND LOW NOISE AM P UHF BAND MIX 2.1 ± 0.1 1.25 ± 0.1 = 25°C CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage

CD 1691 CB

Abstract: BFP67 BFP67W ym 238 zg 500 pro bfp 181 tw
Contextual Info: Y BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications Low noise sm all signal am plifiers up to 2 GHz. This tran sistor has superior noise figure and associated gain p e r­

Contextual Info: SILICON MMIC L/S BAND DOWNCONVERTER FEATURES_ • W ID EBA ND OPERATION: 900 - 2500 MHz • HIGH DYNAM IC RANGE: +2.5 dBm IIPs • HIGH LO-RF ISOLATION: -40 dBm Leakage • UPC2782 GR IN TER N A L B LO C K D IA G R AM _

Contextual Info: SILICON MMIC L/S BAND DOWNCONVERTER FEATURES_ • W ID EBA ND OPERATION: 900 - 2500 MHz • HIGH DYNAM IC RANGE: +2.5 dBm IIPs • HIGH LO-RF ISOLATION: -40 dBm Leakage • UPC2782 GR IN TE R N A L B LO C K D IA G R AM _

AC2327

Contextual Info: ^ c n u n n n COMPONENTE AP0007 1T02300M Hz A bZ JZ / TO-8 CASCADABLE AM AC2327 Typical Values /I AC2327 1 MHz +13.5 dBm Low F re q u e n c y . Medium Output L e v e l. High Performance Thin Film Standard Size TO-8 Package

1202 toshiba transistor

Abstract: 3SK320
Contextual Info: TOSHIBA TENTATIVE 3SK320 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK320 UHF BAND LOW NOISE AM P U n it in mm UHF BAND MIX 2.1 ± 0.1 1.25 ± 0.1 CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage Gate 2-Source Voltage

IEC 60947-5-1 limit switch ex d

Abstract: 924CE FFSR
Contextual Info: 1107-2012:QuarkCatalogTempNew 9/1/12 11:46 AM Page 1107 12 Safety Switches RoHS MICRO SWITCH GK Series Dual-Entry Key Operated Safety Interlock Switch RoHS The GK Series is designed specifically for use where key removal brings the machine to an immediate safe condition. It is well suited for large door

transistor z 0607

Abstract: z 0607 ma Z 728
Contextual Info: H ITACH I 2SC5080-Silicon NPN Epitaxial Transistor Application V H F & U H F w ide band am plifire MPAK-4 Features • H igh gain bandw idth product fx = 13.5 G H z typ • H igh gain, low noise figure PG = 18 dB typ, N F = 1.1 dB typ at f = 900 M H z

Contextual Info: ti/ca AM P Box .10 0 [2.5 4] Centerline Connectors Electronics 4 -R ow Right-Angle Pin Header Assem blies Housing M a te rial — Polyphenylene sulfide per M IL-M -2 45 19 or type GLCP-30F ,8 1 2 *0 1 0 Typ. [20.63«25] Contact M a te rial and Fin ish —

41264

Abstract: 58779
Contextual Info: 20 -24 G H z G a A s M M IC Pow er Am plifier AA022P1-00 Features Chip Layout • Single Bias Supply Operation +6V ■ Broad Coverage of K -B and ■ 15 dB Small Signal Gain ■ 25.5 dBm Saturated Output Power at 23 G H z ■ 18% Power Added Efficiency at 23 GHz

Contextual Info: AVANTEK Q INC MME D H llM n b b 0 QQÛ031 UTO/UTC 1002 Series Thin-Film Cascadable Am plifier 5 to 1000 MHz ; avan tsk • 'T « FEATURES 1 B AVA ;• o ‘v c i APPLICATIONS , • IF/RF Amplification • Frequency Range: 5 to 1000 MHz • Medium Gain: 14.5 dB Typ

transistor NEC B 617

Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and

CD 8227

Abstract: FLK202 FLK202MH-14 FLK202MH14 ta 8227 k AM 128.2 PT 1132
Contextual Info: FLK 202 M H -I4 X - k u B a n d P o w e r iciA s I L i s ABSOLUTE MAXIMUM RATING (Am bient Temperature Ta=25°C . • 11 1 111 1 1 -M Mil. Ill . . . III, II III i mill I. 1,11, III.I im i.y Gate-Source Voltage 1. . . i j . . 1 m u

Contextual Info: Whaì H E W L E T T I ÍHM P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data UTO/UTC/PPA 1043 Series Features Description Pin Configuration • Frequency Range: 10 to 1000 MHz Tho 1043 S eries is a thin-film b ip o la r RF am plifier using lossless

Contextual Info: O rder th is do cum ent by MRFIC0954/D M M O TO R O LA M R F IC 0 9 5 4 Advance Information 800 M H z C D M A U pm ixer/Exciter The MRFIC0954 is an integrated upmixer and exciter amplifier designed specifically for dual-m od e C DM A/AM PS digital cellular radios. The exciter

AMP 120 pin connector

Contextual Info: AMP T w o-P iece, H igh -D en sity Catalog 82618 Printed C ircu it Board C o n n ecto rs R evised 12-95 Vertical Pin Header Modules Left Key Module Related Product Data: Center Guide Module- Mating Receptacle Connectors- pages 100,101 Materials— page 91

CATALOG 7400 amp

Abstract: 1-532448-1 1-532436-1 AMP 120 pin connector 1-532435-2 AMP Coaxial Connector 8255 application note 532448-5 58095-2 AMP 140 pin connector
Contextual Info: Catalog 82618 Two-Piece, High-Density Printed Circuit Board Connectors Revised 12-95 Four-Row Pin Assemblies Without Guide Holes Vertical Posts Row A Material and Finish: Housing— Brown glass-filled polyphenylene sulfide Contacts— Phosphor bronze, plated

Image Sensors

Abstract: "Image Sensors"
Contextual Info: N-MOS LINEAR IMAGE SENSORS Self-scanning photodiode arrays with large active areas The N-MOS linear image sensor is a self-scanning photodiode a rra y d e sig n e d s p e c ific a lly fo r d e te c to rs in m u ltic h a n n e l spectroscopy. The scanning circuit is constructed with N-channel

philips ecg master replacement guide

Abstract: ecg semiconductors master replacement guide ECG transistor replacement guide book free philips ecg semiconductors master replacement guide oz 8602 gn AC digital voltmeter using 7107 smd glass zener diode color codes cd 1619 CP fm radio russian transistor cross-reference yd 7377
Contextual Info: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete

S-0150-01

Abstract: HYPERTAC CONTACT PIN 18024 S-0250-01 HYPERTAC mdm S-0350-01 SH463 S0150.01 extraction tool S0150-01 a2700 AF8 CRIMPING TOOL
Contextual Info: L Series Modular Connectors 5.50 8.25 11.00 11.00 A Therefore a “step” is defined as the length used by each assembled element. - An elementary step is defined as 5.50 mm - The letter “A” is the sum of the dimensions of the contact elements. Hypertac modular connectors employ a do-it-yourself

tl 2262 am

Abstract: ATF-35143 ATF-33143 ATF-34143 ATF-35143-BLK ATF-35143-TR1 ATF-35143-TR2 ppc 8247 E 70 5059
Contextual Info: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-35143 Features • Low Noise Figure Surface Mount Package SOT-343 Description Agilent’s ATF-35143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 SOT-343 surface mount plastic

Contextual Info: C ir c u it D e s c r ip t io n Introduction The Bt497A and Bt498A are software-compatible RAMDACs designed for high-performance and high-resolution applications. The architecture supports a 1280 x 1024 160 MHz Bt497A or up to a 1920 x 1200 240 MHz (Bt498A)