ALUMINIUM NITRIDE Search Results

Contextual Info: Direct Copper Bonded DCB Ceramic Substrates Uncladed ceramic Aluminium Oxide Aluminium Nitride Al2O3 AlN Purity ≥ 96 % ≥ 97 % Dielectric strength 10 kV/mm ~14 kV/mm Electrical resistivity >10 Ωcm >1014 Ωcm Thermal conductivity 24-28 W/mK ≥ 150 W/mK

Dielectric Constant Silicon Nitride

Abstract: thermal conductivity thermal conductivity maruwa AN170 ceramic thermal conductivity AN-200 AN-230
Contextual Info: MARUWA GENERAL CATALOG ALUMINIUM NITRIDE PRODUCTS [ AlN ] The Aluminium Nitride product is a new material having such characteristics as superior thermal conductivity, high electric insulation, and coefficient of thermal expansion similar to that of silicon Si and is drawing attention as a next-generation

Contextual Info: Direct Copper Bonded DCB Ceramic Substrates Uncladed ceramic Aluminium Oxide AI,Oa Aluminium Nitride AIN Purity > 96 % > 97 % Dielectric strength 10 kV/mm -1 4 kV/mm Electrical resistivity > 1 0 14 £3cm > 1 0 1“ ii:m Thermal conductivity 24-28 W/mK > 150 W/mK

Contextual Info: DCB Module Technology Based on new technologies IXYS is using a patented method which allows bonding of thick copper circuit-board conductors directly on both sides to ceramic aluminium oxide Al20 3 or aluminium nitride (AIN) materials. This DCB (Direct-Copper-Bonding) technology is the basis for

GUVB-S11SD

Contextual Info: GUVB-S11SD TECHNICAL DATA UV-B Sensor Features • • • • • Applications • • Aluminium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring

GUVC-T10GD

Contextual Info: GUVC-T10GD TECHNICAL DATA UV-A Sensor Features • • • • Applications • • Aluminium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness Pure UV-C Monitoring Sterilization Lamp Monitoring Absolute Maximum Ratings

CJ 24

Abstract: GUVB-T10GD Aluminium gallium nitride PHR-2
Contextual Info: UV-B Photodetector GUVB-T10GD Features Aluminium Gallium Nitride based material Schottky-type photodiode No cut-off filters needed Intrinsic visible blindness High responsivity Low dark current Designed to operate in photovoltaic mode Hermetic package sealed with quartz window

Contextual Info: NT IA PL M CO • ■ *R oH S Features ■ ■ Applications DC to 3.0 GHz Flanged model Low VSWR Aluminium Nitride ceramic ■ High power RF transmission CHF8838xNF Series 150 W Power RF Flanged Chip Termination Absolute Ratings W

Contextual Info: NT IA PL M CO • ■ *R oH S Features ■ ■ Applications DC to 3.0 GHz Flanged model Low VSWR Aluminium Nitride ceramic ■ High power RF transmission CHF8838CNF Series 150 W Power RF Flanged Chip Termination Absolute Ratings W

CHF8838CNF

Abstract: 8838
Contextual Info: NT IA PL M CO S oH *R Features • ■ ■ ■ Applications DC to 3.0 GHz Flanged model Low VSWR Aluminium Nitride ceramic ■ High power RF transmission CHF8838CNF Series 150 W Power RF Flanged Chip Termination Absolute Ratings W

Contextual Info: TaNSil Wire Bondable Silicon Chip Resistors Welwyn Components WBC Series • Ultra-stable TaNSil® resistors on silicon • MIL screening available • High resistor density • Highly reliable aluminium bond pads Gold bond pads available • Discrete or tapped schematics

Contextual Info: TaNSil Wire Bondable W NE Silicon Chip Resistors WBC SERIES ● Ultra-stable TaNSil® resistors on silicon ● MIL screening available ● High resistor density ● Highly reliable aluminium bond pads Gold bond pads available ● Discrete or tapped schematics

thyristor phase control rectifier

Contextual Info: Chips, Direct Copper Bonding DCB and Direct Aluminium Bonding (DAB) Ceramic Substrates Power Semiconductor Chips IXYS has a wide range of chips for many electronic circuits. IGBT Chips Vc.3 vCE(Mt) •c G series, Low VCE(Bat) type G series, High Speed type

BP 2818

Abstract: transistor K D 2499 UM 7222 G transistor GaAs FET s parameters
Contextual Info: EC4711 Wide Band Power FET GaAs Field Effect Transistor Description The EC4711 is a Ku band Schottky barrier Field Effect Transistor with 0.5µm Aluminium gate. Individual via hole connection is made between each source pad and the gold plated back face metallization, through the

inverter welding machine circuit board

Abstract: washing machine electric circuit control circuit of induction cooker Electric Welding Machine thyristor Microwave Oven Inverter Control IC washing machine electric circuit drawing Dielectric Constant Silicon Nitride induction cooker circuit sheet metal press bending machine induction cooker circuit with IGBT
Contextual Info: 窒化アルミニウム製品〔ARN〕 ALUMINIUM NITRIDE PRODUCTS 回路部品 CIRCUIT CERAMICS 窒化アルミニウム製品は優れた熱伝導性、高い電気絶縁性、およ びシリコン（Si）に近い熱膨張率の特性を持ち、高熱伝導性材料と

Contextual Info: TER Series Cable Load Assemblies Description: Features: Aeroflex offers a wide selection of "Cable Load Assemblies," made with a choice of either Beryllium Oxide BeO or Aluminum Nitride (AIN) resistive elements. These Cable Load Assemblies feature semi-flexible cables in sizes of 0.080 and 0.141 diameters with SMA style connectors as standard. Other cable

AEROFLEX cable load

Abstract: nitride Aeroflex Microelectronic Solutions CAP ELE AEROFLEX TER AEROFLEX load
Contextual Info: TER Series Cable Load Assemblies Description: Features: Aeroflex offers a wide selection of "Cable Load Assemblies," made with a choice of either Beryllium Oxide BeO or Aluminum Nitride (AIN) resistive elements. These Cable Load Assemblies feature semi-flexible cables in sizes of 0.080 and 0.141 diameters with SMA style connectors as standard. Other cable

SGS-Thomson cross reference

Abstract: QN109 NV94-01
Contextual Info: QN109 QUALITY NOTE NEW METALISATION SCHEME FOR EPROMS WITH UPGRADED PROCESS Over the last few years SGS-THOMSON has been continuously upgrading the process technology of its EPROM products. This upgrading has taken the form of improved process technology, improved designs

labels

Abstract: non inductive, thick film E5400
Contextual Info: COAXIAL TERMINATIONS TECHNICAL INFORMATION I LIST OF APPLICABLE DOCUMENTS : List of related documents covering the general mechanical and climatic tests applicable to the devices described in this catalog. AIR 7304 CEI 169.13 DIN 47295 GAM EG 13 NFC 207xx

Contextual Info: TA 33T Vishay Thin Film Dual Value, Chip Resistor Center Tap FEATURES • Center tap feature • Resistor material: self-passivating Tantalum Nitride • Silicon substrate for good power dissipation • Low cost Actual Size TYPICAL PERFORMANCE These tantalum chips combine excellent stability with great power handling

TCR1005

Abstract: tantalum nitride
Contextual Info: TA 33T Vishay Thin Film Dual Value, Chip Resistor Center Tap FEATURES • Center tap feature • Resistor material: self - passivating Tantalum Nitride • Silicon substrate for good power dissipation • Low cost TYPICAL PERFORMANCE ◆ ABS TRACKING TCR 100

BP Solar

Abstract: photovoltaic module solar cells circuit diagram
Contextual Info: SX 3200 200 watt photovoltaic module High-efficiency photovoltaic module using silicon nitride multicrystalline silicon cells Performance Rated power Pmax Power tolerance Nominal voltage Limited Warranty 1 200W ±9% 16V 25 years Configuration B Bronze frame with output cables and polarized Multicontact

Contextual Info: P R E C I S I O N T H I N F I L M T E C H N O L O G Dual Value, Chip Resistor TA 33T Series, Center Tap FEATURES • Center tap feature • Resistor material: self-passivating Tantalum Nitride • Silicon substrate for good power dissipation • Low cost Actual Size

Contextual Info: TM CALIFORNIA MICRO DEVICES Thin Film Resistor Series California Micro Devices offers the proven reliability of Tantalum Nitride in a high meg ohm resistor chip. Series TM high meg ohm resistor chips are available in values from 1 meg ohms to 20.0 meg ohms and tolerances to