ALSIC 145 Search Results

capax 7-35

Abstract: Felsic capacitors 125 FRS CO 47 capacitor sic-safco felsic co 18 Felsic capacitors FELSIC 018 CO 18 sic-safco capacitor FELSIC 037 CO 37 capacitor sic-safco felsic 039 Sic-Safco promisic
Contextual Info: Modèles de remplacement / Replacement types 4 Anciens modèles / Old ranges Modèles de remplacement /Replacement types ALSIC 105 FRS 1 ALSIC M 105 FRS (1) ALSIC 125 ALSIC FP CELLSIC CI IND 38.1 CMF FP - CMF CMF FRS 12.3 EPSIC R 105 ALSIC IR - ALSIC 145

DFM1200NXM33-F000

Abstract: 100FITS
Contextual Info: DFM1200NXM33-F000 Fast Recovery Diode Module DS5912-1.0 March 2007 LN25215 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 2400A Rating

DFM200PXM33-F000

Abstract: basic ac motor reverse forward electrical diagram
Contextual Info: DFM200PXM33-F000 Fast Recovery Diode Module DS5908- 1.0 March 2007 LN25211 . FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base with AlN substrates • Low FIT Rate KEY PARAMETERS VRRM VF

DFM100PXM33-F000

Abstract: DFM100PXM basic ac motor reverse forward electrical diagram ALSIC 145
Contextual Info: DFM100PXM33-F000 Fast Recovery Diode Module DS5907- 1.0 March 2007 LN25210 . FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base with AlN substrates • Low FIT Rate KEY PARAMETERS VRRM VF

basic ac motor reverse forward electrical diagram

Abstract: DFM400PXM33-F000
Contextual Info: DFM400PXM33-F000 Fast Recovery Diode Module DS5909- 1.0 March 2007 LN25212 . FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base with AlN substrates • Low FIT Rate KEY PARAMETERS VRRM VF

basic ac motor reverse forward electrical diagram

Abstract: Dynex Semiconductor DFM100PXM33-F000
Contextual Info: DFM100PXM33-F000 Fast Recovery Diode Module DS5907- 1.1 June 2008 LN26126 . FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base with AlN substrates • Low FIT Rate KEY PARAMETERS VRRM VF

DFM400NXM33-F000

Abstract: 3300V FRD
Contextual Info: DFM400NXM33-F000 Fast Recovery Diode Module DS5910-1.0 March 2007 LN25214 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 800A Rating

ALSIC 145

Abstract: DFM400PXM33-F000
Contextual Info: DFM400PXM33-F000 Fast Recovery Diode Module DS5909- 1.1 May 2008 LN26124 . FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop KEY PARAMETERS VRRM VF (typ) IF (max) IFM (max) 3300V 2.9V 400A 800A Isolated AlSiC Base with AlN substrates

DFM200PXM33-F000

Contextual Info: DFM200PXM33-F000 Fast Recovery Diode Module DS5908- 1.1 May 2008 LN26125 . FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop KEY PARAMETERS VRRM VF (typ) IF (max) IFM (max) 3300V 2.9V 200A 400A Isolated AlSiC Base with AlN substrates

DFM800NXM33-F000

Contextual Info: DFM800NXM33-F000 Fast Recovery Diode Module DS5911-1.0 March 2007 LN25213 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1600A Rating

Contextual Info: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-04 07-2013 • Ultra low loss, rugged SPT+ chip-set  Smooth switching SPT+ chip-set for good EMC  High insulation package  AlSiC base-plate for high power cycling capability

Contextual Info: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E330100 Doc. No. 5SYA1556-04 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability

DFM800XXM45-TS001

Contextual Info: DFM800XXM45-TS001 Fast Recovery Diode Module Replaces DS6096-1 DS6096-2 October 2013 LN31066 FEATURES KEY PARAMETERS • VRRM VF IF IFM 10.2kV Isolation Package  Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

IGBT CHIP 600V ABB

Abstract: ABB IGBT diode 1200V 2400E-12
Contextual Info: VCE IC = = 1200 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E120100 PRELIMINARY Doc. No. 5SYA1561-00 Oct 05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

A736065

Contextual Info: 2 000 h / 145°C 32 000 h / 105°C ALSIC 145 10 . 100 V 22 . 4700 µF ∅ 10 . 16 mm Spécifications applicables - 55°C / + 145°C / 56 jours/days L.L. Specifications NFC 83 110 - Longue durée CECC 30 300 CEI 60 384-4 longue durée Test d'endurance normalisé sous Un :

A736022

Abstract: A736081 A736063 A736047 A736040 A736064 A736103 A736065 A736066
Contextual Info: 2 000 h / 145°C 32 000 h / 105°C ALSIC 145 10 . 100 V 22 . 4700 µF ∅ 10 . 16 mm Spécifications applicables - 55°C / + 145°C / 56 jours/days L.L. Specifications NFC 83 110 - Longue durée CECC 30 300 CEI 60 384-4 longue durée Test d'endurance normalisé sous Un :

ALSIC 145

Abstract: A736063 A736085 A736106 A736066 A736044 A736060 A736047 A736045 A736084
Contextual Info: 2 000 h / 145°C 32 000 h / 105°C ALSIC 145 10 . 100 V 22 . 4700 µF ∅ 10 . 16 mm Spécifications applicables - 55°C / + 145°C / 56 jours/days L.L. Specifications NFC 83 110 - Longue durée CECC 30 300 CEI 60 384-4 longue durée Test d'endurance normalisé sous Un :

cosmic

Contextual Info: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-02 Nov 10 • Ultra low loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability

Contextual Info: Data Sheet, Doc. No. 5SYA 1433-00 12-2013 5SND 0500N330300 HiPak IGBT Module VCE = 3300 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

5SNA 1200E330100

Contextual Info: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E330100 Doc. No. 5SYA1556-03 May 05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

igbt 5SNG

Abstract: IC 7400 configuration 5SNG0150P450300 5SNG 0150P450300
Contextual Info: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-02 Sep 09 • Ultra low loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability

Contextual Info: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-04 07-2013 •    Ultra low loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling

IGBT CHIP 600V ABB

Contextual Info: VCE IC = = 1200 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E120100 PRELIMINARY Doc. No. 5SYA1561-00 Apr 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

Contextual Info: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-03 04-2012 Ultra low loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal