ALPHA SPDT SWITCH Search Results

Contextual Info: GaAs MM1C SPDT FET Switch 0 3 Alpha Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 G H z ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation Product\Temp. Stability

Contextual Info: GaAs MMIC Two Watt High Linearity EH Alpha Cellular SPDT Switch in SS0P8 Package AS358-62 Features • High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10 V Control Voltages

Contextual Info: GaAs MMIC Two Watt High Linearity Cellular SPDT Switch 0 Alpha AS103-59 Features • High Linearity 55 dBm IP3 @ 900 M Hz ■ Low Loss (0.35 dB @ 900 M Hz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control Voltages ■ Extremely Low Cost

Contextual Info: GaAs 1C Positive Control Non-Reflective SPDT Switch 0.5-2 GHz ES Alpha AS171-73 Features 9OT-6 • Positive Control Voltage 0.074 1.90 mm REF. r i P'N6^n n ■ Non-Reflective ■ Low DC Power Consumption 0.126 (3.20 mm) t - 0.087 (2.20 mm) f 0.071 (1.80 mm)

Contextual Info: GaAs MMIC SPDT FET Switch Chip Alpha With Integral Driver DC-6 GHz AK006R2-00, AK006M2-00 Features • Integral Drive +5V, -5V ; CMOS and TTL Compatible ■ Low Power Consumption <20 mW ■ 20 Nanosec Switching Time ■ Chip Size 41 x 43 x 8 Mils ■ Non-Reflective or Reflective (Open)

Contextual Info: GaAs IC BGA-MCM High Isolation SPDT GSM Synthesizer Switch 0.7-1.1 GHz ES Alpha AB100-90 Features BGA-MCM • High Isolation 90 dB @ 900 MHz 0.031 'A T C O R N E R A ‘AV CORNER n (0 .8 0 m m ) - ■ +5 V Control Voltages ■ 8 x 8 x 1.6 mm Ball Grid Array (BGA)

HMC849LP4C

Abstract: HMC849LP4CE hmc849
Contextual Info: HMC849LP4CE v02.0410 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Typical Applications Features The HMC849LP4CE is ideal for: High Isolation: up to 60 dB • Cellular/4G Infrastructure Single Positive Control: 0/+3V to +5V • WiMAX, WiBro & Fixed Wireless

20 GHz PIN diode

Abstract: HMC-C011 high power SPDT
Contextual Info: HMC-C011 v01.1205 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20.0 GHz SWITCHES - CONNECTORIZED MODULES 9 Features High Isolation: >45 dB up to 5 GHz >35 dB up to 20 GHz Low Insertion Loss: 2 dB @ 12 GHz 2.5 dB @ 16 GHz Fast Switching Typical Applications Non-Reflective Design

HMC547LP3

Abstract: GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz
Contextual Info: HMC547LP3 v00.0305 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20.0 GHz Typical Applications Features The HMC547LP3 is ideal for: High Isolation: >50 dB up to 5 GHz • Basestation Infrastructure >45 dB up to 15 GHz • Fiber Optics & Broadband Telecom Low Insertion Loss: 1.6 dB @ 10 GHz

HMC784MS8GE

Abstract: h784 HMC784 SPDT SWITCH 002 0808 SWITCH 002 0808
Contextual Info: HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Typical Applications Features The HMC784MS8GE is ideal for: Input P1dB: +40 dBm @ Vdd = +8V • Cellular / 4G Infrastructure High Third Order Intercept: +62 dBm • WiMAX, WiBro & Fixed Wireless

HMC545E

Abstract: 545e HMC545
Contextual Info: HMC545 / 545E v00.0905 SWITCHES - SMT 8 GaAs MMIC SPDT SWITCH, DC - 3 GHz Typical Applications Features The HMC545 / HMC545E is ideal for: Low Insertion Loss: 0.25 dB • Cellular/3G Infrastructure High Input IP3: +65 dBm • Private Mobile Radio Handsets

HMC641

Abstract: HMC641LC4
Contextual Info: HMC641LC4 v00.0609 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 20 GHz Typical Applications Features The HMC641LC4 is ideal for: Broadband Performance: DC - 20 GHz • Telecom Infrastructure High Isolation: 42 dB @ 12 GHz • Microwave Radio & VSAT Low Insertion Loss: 2.1 dB @ 12 GHz

HMC607

Contextual Info: HMC607 v00.0307 SWITCHES - CHIP 4 GaAs MMIC HIGH ISOLATION SPDT SWITCH, DC - 15 GHz Typical Applications Features The HMC607 is ideal for: High Isolation: >50 dB @ 10 GHz • Telecom Infrastructure Low Insertion Loss: 1.4 dB Typical @ 6.0 GHz • Microwave Radio & VSAT

rogers 4003

Abstract: alpha industries a3
Contextual Info: Preliminary 34–44 GHz Surface Mount SPDT Switch AP038R5-A3 Patent Pending Features • Surface Mount Package ■ Low Loss, 2.0 dB ■ High Isolation, 30 dB ■ High Power Handling, +30 dBm CW ■ Fast Switching Speed, 2 nS ■ 100% RF and DC Testing Description

Contextual Info: GaAs MMIC SPDT FET Switch With Integral Driver Non-Reflective DC-2.5 GHz EBAlph AK802M2-12 Features • Plastic 8 Lead SOIC ■ Low DC Power Consumption ~20 mW per Arm ■ High IP3 +43 dBm @ 800 MHz ■ Non Reflective ■ Integral Driver -5.6 Volt Bias Supplies; CMOS

Contextual Info: GaAs MMIC SPDT Reflective Switch Dual Positive Control DC-2500 MHz EBAlpha AS373-12 Features • Low Loss <0.5 dB @ 900 MHz ■ Dual Positive Control Logic ■ Positive Voltage Operation (+3 to +5V) ■ Low DC Power Consumption ■ Extremely Low Cost ■

handling of beam lead diodes

Abstract: beam lead PIN diode ALPHA INDUSTRIES DSM6355 DSM63XX Alpha Industries pin diodes
Contextual Info: Planar and Mesa Beam Lead PIN Diodes EIB AIpfia DSG64XX, DSM63XX Series Features Low Capacitance Low Resistance Fast Switching Oxide-Nitride Passivated Maximum Ratings Stronger, Full Frame Design High Voltage Operating Temperature: -65 to + 150 °C Storage Temperature:

Contextual Info: GaAs MMIC SPDT FET Switch Non-Reflective DC-6 GHz • EBAlph . . . . - . * »■ ■ ■ ■V.s-l AS006M2-01, AS006M2-10, AS004M2-08, AS004M2-11 Features ■ Broadband DC-6 GHz ■ Non-Reflective ■ Low DC Power Consumption ■ Excellent Intermodulation ProductsYTemp. Stability

AS186-302

Contextual Info: GaAs IC High Isolation Positive Control SPDT Non-Reflective Switch DC–4.0 GHz AS186-302 Features • Positive Voltage Control 0/+3 to 0/+5 V ■ High Isolation (55 dB @ 0.9 GHz and 1.9 GHz) MSOP-8 Exposed Pad 0.122 (3.09 mm) 0.114 (2.89 mm) 8 ■ Miniature MSOP-8 Exposed Pad Package

AS-101

Contextual Info: GaAs MMIC SPDT Switch ESAlpha in SOIC 8 Plastic Package AS101-12 Features • Extremely Low Cost ■ 3 Volt Operation ■ Low Power Consumption Description The AS101-12 is an SPDT switch with complementary voltage control. Its low voltage control function is ideal for 3 Volt applications which

DSG6474-000

Abstract: DSM6361-000 handling of beam lead diodes DSG6405 Alpha Industries pin diodes
Contextual Info: Planar and Mesa Beam Lead PIN Diodes EHA lpha DSG6405-000, DSG6474-000, DSM6300 Series Features Low Capacitance Low Resistance Fast Switching Oxide-Nitride Passivated Maximum Ratings Stronger, Full Frame Design Operating Temperature: High Voltage -6 5 to + 150°C

Contextual Info: GaAs MMIC SPDT FET Switch With SAIphi Integrai Driver Non-Refiective DC-2.5 GHz *m¿ AK002M2-12 Features • Plastic 8 Lead SOIC ■ Low DC Power Consumption -20 mW Per Arm ■ Non Reflective ■ Integral Driver +5V, -5V Bias Supplies; CMOS and TTL Compatible

AS131-59

Contextual Info: GaAs SPDT Non-Reflective Switch DC–2.5 GHz AS131-59 Features MSOP-8 • Low DC Power Consumption 0.0256 0.65 mm TYP. ■ High Isolation (45 dB @ 0.9 GHz) PIN 1 INDICATOR ■ Non-Reflective Description 0.118 (3.00 mm) ± 0.004 (0.1 mm) SQ. PIN 1 The AS131-59 is a high isolation IC FET SPDT

Contextual Info: GaAs SPDT Non-Reflective Switch DC-2.5 GHz EBAlpha AS131-59 Features MSOP-8 • Low DC Power Consumption 0.0256 0.65 mm TYP. ■ High Isolation (45 dB @ 0.9 GHz) PIN 1 INDICATOR ■ Non-Reflective 0.193 (4.90 mm) REF. Description 0.012(0.30 mm) The AS131-59 is a high isolation IC FET SPDT