ALLOWABLE ERRORS Search Results

Contextual Info: LIGHT MODULATION PHOTO ICs S6986, S6846, S4282-51, S7136 HAMAMATSU PRELIM INARY DATA Jul. 1997 For optical synchronous detection under high background light condition FEATURES • Superior allowable background light level m S6986, S4282-51: 10000 Ix Typ. •

NEC B 536

Abstract: RD16UJ RD10UJ RD11UJ RD12UJ RD13UJ RD15UJ RD18UJ RD39UJ zener 3683
Contextual Info: DATA SHEET ZENER DIODES RD4.7UJ to RD39UJ LOW NOISE SHARP BREAKDOWN CHARACTERISTICS ZENER DIODES 2PIN ULTRA SUPER MINI MOLD DESCRIPTION Type RD4.7UJ to RD39UJ Series are 2PIN Ultra Super Mini PACKAGE DIMENSIONS Unit: mm Mold Package zener diodes possessing an allowable power

Nec b 616

Abstract: zener diode rd20e b2 NEC 3536 nec 2563 RD20E RD120E NEC Zener diode RD3.0E NEC zener diode 35 series nec zener diode RD13E
Contextual Info: DATA SHEET ZENER DIODES RD2.0E to RD120E 500 mW PLANAR TYPE SILICON ZENER DIODES The RD2.0E to RD120E are zener diodes with an allowable PACKAGE DRAWING UNIT: mm dissipation of 500 mW and a planar type glass sealed DHD (double heatsink diode) structure.

NEC zener diode 35 series

Contextual Info: DATA SHEET ZENER DIODES RD2.0E to RD120E 500 mW PLANAR TYPE SILICON ZENER DIODES The RD2.0E to RD120E are zener diodes with an allowable PACKAGE DRAWING UNIT: mm dissipation of 500 mW and a planar type glass sealed DHD (double heatsink diode) structure.

rd4.7sl

Abstract: RD5.1SL RD5.1SL(0)-T1-A RD10SL RD11SL RD12SL RD13SL RD15SL RD16SL RD18SL
Contextual Info: DATA SHEET ZENER DIODES RD4.7SL to RD39SL ZENER DIODES 200 mW 2 PIN SUPER MINI MOLD DESCRIPTION Mold Package zener diodes possessing an allowable power dissipation of 200 mW featuring low noise and sharp breakdown characteristic. They are intended for use in audio

2SK0655

Abstract: 2SK655 SC-72
Contextual Info: Silicon MOS FETs Small Signal 2SK0655 (2SK655) Silicon N-Channel MOS FET unit: mm 4.0±0.2 3.0±0.2 For switching • Features Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature

D1356

Abstract: RD10UM RD11UM RD12UM RD13UM RD15UM RD16UM RD18UM RD39UM RD6.2UM
Contextual Info: DATA SHEET ZENER DIODES RD2.0UM to RD39UM ZENER DIODES 2PIN ULTRA SUPER MINI MOLD DESCRIPTION Type RD2.0UM to RD39UM Series are 2-pin PACKAGE DIMENSIONS Unit: mm Ultra Super Mini Mold Package zener diodes possessing an allowable power dissipation of 150

S4285-61

Abstract: S4282-11 S5943 7-J12
Contextual Info: LIGHT MODULATION PHOTO ICs S4282-11, S5943 S4282-51, S4285-61 HAMAMATSU TECHNICAL DATA For optical synchronous detection under high background light condition FEATURES • Superior allowable background light level. 10000b: Typ. S4282-11, S4282-51 4000k Typ. (S5943, S4285-61)

photodiode preamplifier

Abstract: S6986 S4282-51 S6846 S7136
Contextual Info: LIGHT MODULATION PHOTO ICs S6986, S6846 S4282-51, S7136 PRELIMINARY DATA Jul. 1997 FEATURES For optical synchronous detection under high background light condition ● Superior allowable background light level S6986, S4282-51: 10000 lx Typ. S6846, S7136: 4000 lx Typ.

PUB4753

Abstract: PU7457
Contextual Info: Power Transistor Arrays F-MOS FETs PUB4753 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation

RD2.0F

Abstract: nec 3904 SC-1007A B1 6 zener RD20F NEC B 617 Zener Diode B1 9 RD10F RD13F RD15F
Contextual Info: DATA SHEET ZENER DIODES RD2.0F to RD82F ZENER DIODES 1 W DO-41 GLASS SEALED PACKAGE DESCRIPTION PACKAGE DIMENSIONS NEC type RD∗∗F Series are DHD Double Heatsink Diode (Unit: mm) Construction planar type zener diodes possessing an allowable power dissipation of 1 watt.

Contextual Info: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation

RD13SB

Abstract: B1 6 zener 22 B2 zener b3 zener RD18S RD5.6S RD10S RD11S RD27SB RD12S
Contextual Info: DATA SHEET ZENER DIODES RD2.0S to RD120S ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Type RD2.0S to RD120S Series are 2 PIN Super Mini in millimeter Mold Package zener diodes possessing an allowable power dissipation of 200 mW.

RD2.0FM

Abstract: C11531E RD10FM RD11FM RD120FM RD12FM RD13FM RD15FM RD16FM RD18FM
Contextual Info: DATA SHEET ZENER DIODES RD2.0FM to RD120FM ZENER DIODES 1 W 2 PIN POWER MINI MOLD PACKAGE DIMENSIONS DESCRIPTION Unit: mm Type RD2.0FM to RD120FM series are 2 pin power mini mold package zener diodes possessing an 4.7 ±0.3 allowable power dissipation of 1 W.

GN01081B

Contextual Info: GaAs MMICs GN01081B GaAs IC with built-in ferroelectric Driver amplifier for PCS +0.1 10-0.2–0.05 unit: mm Unit VDD Symbol 8 V Circuit current IDD 100 mA Max input power Pin −5 dBm Allowable power dissipation PD 450 mW Operating ambient temperature Topr

B2BB1

Abstract: iz 220 RD10M RD11M RD12M RD13M RD15M RD16M RD47M 7M marking
Contextual Info: DATA SHEET ZENER DIODES RD2.0M to RD47M ZENER DIODES 200 mW 3-PIN MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Type RD2.0M to RD47M Series are planar type zener diodes Unit: mm processing an allowable power dissipation of 200 mW. 2.8 ± 0.2 Planar process 0.65 +0.1

MAZY000

Abstract: MAZY047 MAZY051 MAZY056 MAZY062 MAZY068 MAZY075 MAZY082 MAZY091 MAZY100
Contextual Info: Zener Diodes MAZY000 Series MAZ000 Series Silicon planar type Unit : mm For stabilization of power supply 4.4 ± 0.3 • Large power dissipation: PD = 1 W • Zener voltage VZ : 4.7 V to 51 V • Zener voltage allowable deviation: 10% • Auto mounting possible

PU7457

Abstract: PUB4753
Contextual Info: Power Transistor Arrays F-MOS FETs PUB4753 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation

B2 Zener

Abstract: B1 6 zener zener diode numbering system RD18SB rd 62 nec zener RD110s RD5.1S RD5.1S(B)-T1-A/1431T data sheet zener diode mv 5 MARK b3 zener diode
Contextual Info: DATA SHEET ZENER DIODES RD2.0S to RD120S ZENER DIODES 200 mW 2 PIN SUPER MINI MOLD PACKAGE DIMENSIONS DESCRIPTION in millimeter Type RD2.0S to RD120S series are 2 pin super mini power dissipation of 200 mW. 0.3±0.05 1.25±0.1 mold package zener diodes possessing an allowable

tn0008

Abstract: mobile ddr2 TN-00-08 micron BGA SDRAM
Contextual Info: TN-00-08: Thermal Applications Introduction Technical Note Thermal Applications Introduction This technical note defines a general method and the criteria for measuring and ensuring that Micron memory components and modules do not exceed the maximum allowable temperature. The specified temperatures will help ensure the reliability and

marking AB2

Abstract: diode zener 1N 398 nec 2563 7es marking RD15ES RD10ES RD11ES RD12ES RD13ES RD16ES
Contextual Info: DATA SHEET ZENER DIODES RD2.0ES to RD39ES 400 mW DHD ZENER DIODE DO-34 DESCRIPTION NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34 Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode) construction having allowable power dissipation of 400 mW.

RD12FM

Abstract: RD13FM RD15FM RD16FM RD18FM RD20FM RD10FM RD11FM RD120FM RD6.2
Contextual Info: DATA SHEET ZENER DIODES RD2.0FM to RD120FM ZENER DIODES 1 W PLANAR TYPE 2 PIN POWER MINI MOLD PACKAGE DIMENSION Unit: mm DESCRIPTION These products are zener diodes with an allowable power dissipation of 1 W and a planar type 2 pin power mini mold 4.7 ±0.3

RD10MW

Abstract: RD11MW RD12MW RD13MW RD15MW RD16MW RD18MW RD39MW RD4.7MW
Contextual Info: DATA SHEET ZENER DIODES RD2.0MW to RD39MW ZENER DIODES 200 mW 3-PIN MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Type RD2.0MW to RD39MW Series are 3-PIN Mini Mold Package Unit: mm zener diodes possessing allowable power dissipation of 200 mW. 2.8 ± 0.2 +0.1

2SJ0163

Abstract: 2SJ163 2SK1103
Contextual Info: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation