MG250YD2YMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A |
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MG800FXF1JMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
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MG800FXF1ZMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD |
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GT30J110SRA
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Toshiba Electronic Devices & Storage Corporation
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IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
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TTC5886A
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
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TTA2097
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
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