ALGORITHMS OF DATA STRUCTURE Search Results

pic18 an953

Abstract: 4558 dd 97120 lfsr galois prbs using lfsr 811b fc 4558 DS00821 f 4558 MOV1
Contextual Info: AN953 Data Encryption Routines for the PIC18 Author: David Flowers Microchip Technology Inc. INTRODUCTION This Application Note covers four encryption algorithms: AES, XTEA, SKIPJACK and a simple encryption algorithm using a pseudo-random binary sequence generator. The science of cryptography

MX29LV128D

Abstract: MX29LV128DTTC MX29LV128DBT2C-90Q MX29LV128DBT2C 0110001 227A capacitor mx29lv128db MX29LV128DBT Q0-Q15 510000-51FFFF
Contextual Info: MX29LV128D T/B 128M-BIT [16M x 8/8M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 16,777,216 x 8 / 8,388,608 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 255 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable

C2000

Abstract: sensorless FOC c source code F240 SMJ320F240 TMS320 XDS510 space vector PWM tms320 modulation projects random PWM
Contextual Info: T HE W ORLD L EADER I N D S P A ND A NALOG Up to 20 M IPS Key Features: • 132-pin ceramic quad flatpack Product Bulletin • 50-ns instruction cycle time SM/SMJ320F240 Military Digital Signal Processors • Military temp range: -55ºC to 125ºC • Watchdog timer and 3 general

MOTOROLA brushless dc controller

Abstract: MOTOROLA sensorless brushless dc controller 56800 clarke transformation clarke transformation in power quality source code for DQ transformation 726 MOTOROLA TRANSISTORS motorola zc sensorless bldc motor driver circuit using dsp "Brushless DC Motors"
Contextual Info: DSP56800SDKPB/D Rev. 1, 3/2001 Semiconductor Products Sector DSP56800SDK Product Brief Smart Development Tools Embedded SDK 2.3 Motorola’s Embedded SDK offers reusable software components designed to expedite time to market and reduce development costs. The latest version, Embedded SDK 2.3, makes it easy to develop the most demanding

PM-22

Contextual Info: Digital Imaging Solutions / SOFTWARE / PROCESSORS / SYSTEM SOLUTIONS / PM-44i Programmable Imaging DSP High-performance, low-cost peripheral imaging solution • Unmatched price/performance Third-generation SIMD parallel processing architecture • Flexible platform

243007

Abstract: intel 243007 640X480 opacity
Contextual Info: Intel MMX Technology Overview March 1996 Order Number: 243081-002 MMXTM Technology Overview E Information in this document is provided in connection with Intel products. No license under any patent or copyright is granted expressly or implied by this publication. Intel assumes no liability whatsoever, including infringement of any patent or copyright,

matlab code for modified lms algorithm

Abstract: Circuit diagram for optimal IIR multiple notch f fxlms dual mic non-stationary noise TMS320 TMS320C25 TMS320C26 TMS320C30 TMS320C40 pressure sensor MATLAB program
Contextual Info: Design of Active Noise Control Systems With the TMS320 Family Application Report 1996 Digital Signal Processing Solutions Printed in U.S.A., June 1996 SPRA042 If the spine is too narrow to print this text on, reduce ALL spine copy including TI bug at the top of the spine

AES4000

Abstract: AuthenTec CMOS image sensor fingerprint circuit fingerprint image sensor AES4000TM AuthenTec AES4000 (EntryPad) fingerprint biometric fingerprint Sensor datasheet biometric sensor datasheet CMOS image sensor usb
Contextual Info: AES4000 EntréPad Fingerprint Sensor Introducing… Superior image quality… The all-new EntréPad AES4000™ is AuthenTec's latest, low-power, small form-factor fingerprint identification sensor IC. The AES4000 uses familiar and reliable 0.6 µ CMOS technology.

PSC9132

Abstract: JESD207/ADI BSC9130/31 BSC9132
Contextual Info: White Paper QorIQ Qonverge Portfolio Next-Generation Wireless Network Bandwidth and Capacity Enabled by Heterogeneous and Distributed Networks Barry Stern Product Marketing Manager, Freescale Semiconductor, Inc. Abstract From the wireless operators’ perspective, the key factors in

Contextual Info: AMD£I AmCOXXCFLKA 1, 2, 4, or 10 Megabyte 5.0 V-only Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance — 150 ns maximum access time ■ Single supply operation — W rite and erase voltage, 5.0 V +5% — Read voltage, 5.0 V +5% ■ CMOS low power consumption

Contextual Info: TK25N60X MOSFETs Silicon N-Channel MOS DTMOS-H TK25N60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance.

Contextual Info: TK31A60W MOSFETs Silicon N-Channel MOS DTMOS TK31A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

TK62N60

Abstract: TK62N60W
Contextual Info: TK62N60W MOSFETs Silicon N-Channel MOS DTMOS TK62N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

Contextual Info: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by using Super Junction Structure : DTMOS

TK39N60W

Contextual Info: TK39N60W MOSFETs Silicon N-Channel MOS DTMOS TK39N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

tk8a60

Contextual Info: TK8A60W MOSFETs Silicon N-Channel MOS DTMOS TK8A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

Contextual Info: TK16N60W MOSFETs Silicon N-Channel MOS DTMOS TK16N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

TK16A60W

Abstract: TK16
Contextual Info: TK16A60W MOSFETs Silicon N-Channel MOS DTMOS TK16A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

Contextual Info: TK16A60W5 MOSFETs Silicon N-Channel MOS DTMOS TK16A60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by using Super Junction Structure : DTMOS

Contextual Info: TK14A65W5 MOSFETs Silicon N-Channel MOS DTMOS TK14A65W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS

Contextual Info: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS

Contextual Info: TK8Q60W MOSFETs Silicon N-Channel MOS DTMOS TK8Q60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

Contextual Info: AMDËI AmCOXXDFLKA 1,2,4, or 10 Megabyte 5.0 V-only Flash Memory PC Card DISTINCTIVE CHARACTERISTICS Separate attribute memory • High performance Automated write and erase operations increase system write performance — 200/150 ns maximum access time ■ Single supply operation

Contextual Info: TK20E60W MOSFETs Silicon N-Channel MOS DTMOS TK20E60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching