AL 220 Search Results

gunn diode x band series 45200

Abstract: Al67 Gunn Diode x-band varactor diode 10 GHz gunn diode AL3501 406X1 AL-35A10 Gunn Diode e band AL-62101
Contextual Info: AL-3 5100 S E R IE S 30 V o lt D K x rt* T h e AL-35100 series o f tun in g v a ra cto r diodes have been desig ned fo r tuning G u n n Type No. AL-35136 AL-35137 AL-35138 AL-35130 AL-35140 AL-35141 AL-35142 AL-36143 AL-35144 AL-35145 AL-35146 Total CapsÜtanca

Contextual Info: CT485B-110V-G-AL, CT485B-220V-G-AL, CT485B-110V-W-AL, CT485B-220V-W-AL High Performance Microprocessor Temperature and Humidity Recorder Operator’s Manual NEWPORT Electronics, Inc. Warranty/Disclaimer NEWPORT Electronics, Inc. warrants this unit to be free of defects in materials and workmanship for a period of one

IEC 60947-4-1 for ABB

Abstract: ABB Magnetic contactor IEC 60947-4-1 50/60HZ abb A 16-30-10 CAL 5-11 ABB abb al 26-30-01 TRANSISTOR R1002 transistor r1010 R1004 transistor ABB AL9 entrelec diode
Contextual Info: Main Catalogue Low Consumption d.c. Operated Contactors AL Contactors NL Contactor Relays 80 1SBC141135C0301 ABB Entrelec AL 9 . AL 40 Contactors NL. Contactor Relays d.c. Operated Contents Ordering details 3-pole Contactors – AL. screw and spring terminals . 5

Contextual Info: GM71C4170A/AL GM71CS4170A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 262,144 WORDS X16BIT CMOS DYNAMIC RAM D escrip tio n F ea tu res The GM71C4170A/AL is the new generation dynamic RAM organized 262,144x16 Bit. GM71C4170A/AL has realized higher density, higher performance and various functions by

DSS300A13R

Abstract: DSS300A13 DSS300A15R DSS300A1S DSS300A8 E10DS1 E10DS2 E10DS4 ha 1303
Contextual Info: - AË J£ m is fa ^ & M 1.j 57- SI # ft & tt s S Vr s m Vrr m Vr IFM Tfc# (V (V) (V) (A) (°C) io. If * 1FSM Tàfèft VFtnax (A) (°C) (°C) B aL B aL B aL B aL B aL 1600 1600 1800 1800 1000 1300 1300 1500 1500 800 300 300 300 300 300 79c 67c 79c 67c 79c

DSS300A13

Abstract: DSS300A13R DSS300A15R DSS300A1S DSS300A8 E10DS1 E10DS2 E10DS4
Contextual Info: - AË J£ m fa ^ is & M 1.j 57- SI # ft & s tt S Vr s m Vr r m Vr IFM Tfc# (V (V) (V) (A) (°C) io. If * (A) (°C) 1FSM Tàfèft VFtnax (A) (°C) DSS 300A 13 DSS300A13R DSS300A15 DSS300A15R DSS3 0 0 A 8 B aL B aL B aL B aL B aL 1600 1600 1800 1800 1000 1300

Contextual Info: TCT Series AL Case Tantalum capacitors Chip tantalum capacitors TCT Series AL Case zExternal dimensions Unit : mm zFeatures (AL) 1) Vital for all hybrid integrated circuits board application. 2) Wide capacitance range. 3) Screening by thermal shock. Anode mark

M705

Contextual Info: Chip tantalum capacitors TCT Series AL Case zFeatures AL 1) Vital for all hybrid integrated circuits board application. 2) Wide capacitance range. 3) Screening by thermal shock. zDimensions (Unit : mm) Anode mark (Unit : mm) + Dimensions AL case L 3.2 +

AL68

Abstract: M705 al 220 22 J.63
Contextual Info: Chip tantalum capacitors TCT Series AL Case zFeatures AL 1) Vital for all hybrid integrated circuits board application. 2) Wide capacitance range. 3) Screening by thermal shock. zDimensions (Unit : mm) Anode mark (Unit : mm) + Dimensions AL case L 3.2 +

476M

Abstract: M705
Contextual Info: TCT Series AL Case Tantalum capacitors Chip tantalum capacitors TCT Series AL Case zDimensions Unit : mm zFeatures (AL) 1) Vital for all hybrid integrated circuits board application. 2) Wide capacitance range. 3) Screening by thermal shock. Anode mark (Unit : mm)

ZN 3055 transistor

Abstract: Transistor w1l 7805 TO-220 V7233 5241E V7331 V5237B V-5240-k mk 5373 V7622
Contextual Info: ASSMANN Technical Data & Abbreviations Electronic C om ponen ts Al Surface nature AI203 Aluminiumoxyd Al Mg Si 0,5 Special aluminium alloy {extruded Al 99,5 Special aluminium alloy band) GD-AI Si 12 Special aluminium alloy (Die-cast) BeO Berylliumoxyd K

Contextual Info: TCT Series AL Case Tantalum capacitors Chip tantalum capacitors TCT Series AL Case zDimensions Unit : mm zFeatures (AL) 1) Vital for all hybrid integrated circuits board application. 2) Wide capacitance range. 3) Screening by thermal shock. Anode mark (Unit : mm)

Contextual Info: TCT Series AL Case Tantalum capacitors Chip tantalum capacitors TCT Series AL Case zDimensions Unit : mm zFeatures (AL) 1) Vital for all hybrid integrated circuits board application. 2) Wide capacitance range. 3) Screening by thermal shock. Anode mark (Unit : mm)

014113

Contextual Info: HM51W4800A/AL Series Preliminary 524,288-Word x 8-Bit Dynamic Random Access Memory • DESCRIPTION ■ ORDERING INFORMATION The Hitachi HM51W4800A/AL are CMOS dynamic RAM organized as 524,288-word x 8-bit. HM51W4800A/AL have realized higher density, higher performance and various

Contextual Info: TCT Series AL Case Tantalum capacitors Chip tantalum capacitors TCT Series AL Case zDimensions Unit : mm zFeatures (AL) 1) Vital for all hybrid integrated circuits board application. 2) Wide capacitance range. 3) Screening by thermal shock. Anode mark (Unit : mm)

Contextual Info: HM51W4800A/AL Series Preliminary 524,288-Word x 8-Bit Dynamic Random Access Memory • DESCRIPTION ■ ORDERING INFORMATION The Hitachi HM51W4800A/AL are CMOS dynamic RAM organized as 524,268-word x 8-bit. HM51W4800A/AL have realized higher density, higher performance and various

Contextual Info: TWIST WAVEGUIDE 1.70GHz – 110GHz 430TWISTW-800 Freq. Range GHz 1.70 - 2.60 340TWISTW-500 2.20 - 3.30 WR340 1.10 500 FDP26/ FDM26 Al 284TWISTW-300 2.60 - 3.95 WR284 1.10 300 FDP32/ FDM32 Al/Cu 229TWISTW-250 3.30 - 4.90 WR229 1.10 250 FDP40/ FDM40 Al/Cu

STR 6267

Abstract: str f 6267 str 6267 f str 5707 STR F 9208 L datasheet str 5707 STR D 5707 str 6853 F918 f4148
Contextual Info: DISTRIBUTORS July 1997 ALABAMA Hamilton Hallmark 4890 University Sq., #1 Huntsville, AL 35805 P#205/837-8700 F#205/830-2565 Marshall 3313 Memorial Pkwy So., 150 Huntsville, AL 35803 P#205/881-9235 F#205/881-1490 Pioneer 4835 University Square Huntsville, AL 35816

s417t

Abstract: ALT70 ALZ-70 88882 ALZ10 CG1700
Contextual Info: GM71C4170A/AL GM71CS4170A/AL LG Semicon Co.,Ltd. 262,144 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71C4170 AML is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4170A/AL has realized higher density, higher performance and various functions by utilizing

gm71c4270a

Contextual Info: GM71C4270A/AL GM71CS4270A/AL LG Semicon Co.,Ltd. 262,144 W ORDS x 16 BIT CMOS DYNAM IC RAM Description Features The GM 71C4270A/AI. is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4270A/AL has realized higher density, higher performance and various functions by utilizing

DSS300A13

Abstract: DSS300A13R DSS300A15R DSS300A1S DSS300A8 E10DS1 E10DS2 E10DS4
Contextual Info: - AË J£ m fa ^ is & M 1.j 57- SI # ft & tt s S Vr s m Vr r m Vr IF M Tfc# (V (V) (V) (A) (°C) io. If * 1F S M Tàfèft VFtnax (A) (°C) Ißtnax * m © œ tí m B (A) (°C) D S S 3 0 0 A 13 DSS300A13R DSS300A15 DSS300A15R DSS300A8 B aL B aL B aL B aL

L0307

Abstract: al0204 Mag Layers
Contextual Info: AL SERIES CUTTING-EDGE TECHNOLOGIES OF EMI/EMC SOLUTIONS A x ia l Lea d In d u c to rs FEATURES The AL inductors series is Mag Layers' line of highly reliable axial lead inductors. Our AL inductors have high quality and high performance characteristics suitable for your design

transistor w16

Contextual Info: O K I Semiconductor MSM5 11665A/AL 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WRITE PER BIT DESCRIPTION The MSM511665A/AL is a new generation dynamic RAM organized as 65,536-word x 16-bit. The technology used to fabricate the MSM511664A/AL is OKI's CMOS silicon gate process technology.

trw 1014

Contextual Info: O K I Semiconductor MSM511665A/AL 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WRITE PER BIT DESCRIPTION The MSM511665A/ AL is a new generation dynamic RAM organized as 65,536-word x 16-bit. The technology used to fabricate the MSM511664A/AL is OKI's CMOS silicon gate process technology.