AK006M2 Search Results

Contextual Info: GaAs 1C SPDT Switch With Integral Driver Non-Reflective DC-6 GHz EHAlpha AK006M2-01, AK006M2-10 -01 Features • Integral Driver ± 5 V Supply Voltages ■ Non-Reflective, High Isolation 0.220 5.59 mm ■ 0.210(5.33 mm) « •-0.130 {3.30 mm) TYP. 0.063(1.60 mm) TYP.

AK006M2-93

Contextual Info: GaAs IC SPDT Switch With Integral Driver Non-Reflective DC–6 GHz AK006M2-93 Features • Integral Driver ±5 V Supply Voltages -93 0.160 0.140 ■ High Isolation, Non-Reflective ■ Broadband DC–6 GHz 0.100 ■ Small Low Cost “Chip on Board” Package

Contextual Info: GaAs IC SPDT Switch Chip With Integral Driver DC-6 GHz EHAlpha AK006R2-00, AK006M2-00 Chip Outline Features • On-Chip Integral Driver o ■ Non-Reflective or Reflective Option ■ Fully Passivated Description This pair of SPDT switches with integral drivers are

Contextual Info: GaAs 1C SPDT Switch With Integral Driver Non-Reflective DC-6 GHz ESAlpha AK006M2-01, AK006M2-10 Features -01 • Integral Driver ±5 V Supply Voltages 0 .2 2 0 5 .5 9 m m 0 .2 1 0 (5 .3 3 m m ) ■ Non-Reflective, High Isolation - 0 .1 3 0 (3 .3 0 m m ) TYP.

Alpha Industries

Contextual Info: GaAs 1C SPDT Switch With Integral Driver Non-Reflective DC-6 GHz ESAlpha AK006M2-93 F eat ur e s • Integral Driver ±5 V Supply Voltages ■ High Isolation, Non-Reflective ■ Broadband D C -6 GHz -93 re 0.160 ■ 0.140 ■ 0 .1 0 0 ■ Small Low Cost “Chip on Board” Package

Contextual Info: GaAs IC SPDT Switch Chip With Integral Driver DC-6 GHz ESAlpha AK006R2-00, AK006M2-00 Chip Outline F eat ur e s • On-Chip Integral Driver ■ Non-Reflective or Reflective Option ■ Fully Passivated D e s c rip ti o n This pair of SPDT switches with integral drivers are

Contextual Info: Preliminary GaAs 1C SPDT Switch With Integral Driver Non-Reflective DC-6 GHz EBAlpha AK006M2-93 Features • Integral Driver ±5 V Supply Voltages ■ High Isolation, Non-Reflective ■ Broadband DC-6 GHz ■ Small Low Cost “Chip on Board” Package Description

Contextual Info: GaAs MMIC SPDT FET Switch Chip Alpha With Integral Driver DC-6 GHz AK006R2-00, AK006M2-00 Features • Integral Drive +5V, -5V ; CMOS and TTL Compatible ■ Low Power Consumption <20 mW ■ 20 Nanosec Switching Time ■ Chip Size 41 x 43 x 8 Mils ■ Non-Reflective or Reflective (Open)

Contextual Info: GaAs 1C SPDT Switch With Integral Driver Non-Reflective DC-6 GHz ESAlpha AK006M2-93 -93 Features • Integral Driver ±5 V Supply Voltages ■ High Isolation, Non-Reflective ■ Broadband D C -6 GHz re 0.160 ■ 0.140 ■ 0.100 z ■ Small Low Cost “Chip on Board” Package

Contextual Info: GaAs MMIC SPDT FET Switch With Integral Driver Non-Reflective DC-6 GHz 03Alpha AK006M2-01, AK006M2-10, AK004M2-11 Features Low DC Power Consumption -2 0 mW Per Arm Non-Reflective AK006M2-01 Integral Driver +5V, -5V; CMOS & TTL Compatible • Meets M IL -S T D -883 Screening Requirements

AK006M2-00

Abstract: AK006R2-00 GaAs IC SPDT
Contextual Info: GaAs IC SPDT Switch Chip With Integral Driver DC–6 GHz AK006R2-00, AK006M2-00 Features Chip Outline 0.547 • On-Chip Integral Driver ■ Non-Reflective or Reflective Option 1.045 0.945 ■ Fully Passivated Description Electrical Specifications at 25°C

ak004m2-11

Contextual Info: GaAs MMIC SPDT FET Switch With Integral Driver Non-Reflective DC-6 GHz AK006M2-01, AK006M2-10, AK004M2-11 Features • Low DC Power Consumption - 2 0 mW Per Arm ■ Non-Reflective AK004M2-11 ■ Integral Driver +5V, -5 V ; C M O S & TTL Compatible ■ Meets M IL -S T D -8 8 3 Screening Requirements

Contextual Info: GaAs IC SPDT Switch Chip With Integral Driver DC-6 GHz EBAlpha AK006R2-00, AK006M2-00 Features • On-Chip Integral Driver Chip Outline ■ Non-Reflective or Reflective Option ■ Fully Passivated Description This pair of SPDT switches with integral drivers are

AK006M2-10

Contextual Info: GaAs 1C SPDT Switch With Integral Driver Non-Reflective DC-6 GHz ESAlpha AK006M2-01, AK006M2-10 F eat ur e s • Integral Driver ±5 V Supply Voltages ■ Non-Reflective, High Isolation -01 0.220 5.59 mm 0.210 (5.33 mm) ■0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP.

AK006M2-93

Contextual Info: GaAs IC SPDT Switch With Integral Driver Non-Reflective DC–6 GHz AK006M2-93 Features • Integral Driver ±5 V Supply Voltages -93 0.160 0.140 ■ High Isolation, Non-Reflective ■ Broadband DC–6 GHz 0.100 ■ Small Low Cost “Chip on Board” Package

Contextual Info: Section 2 RF GaAs MMIC Products in Metal Packages Numerical Index Part Number Page Part Number Page Part Number Page AD004T2-00 2-44 AK006R2-01 2-30 AS006M1-01 2-8 AD004T2-11 2-44 AK006R2-10 2-30 AS006M1-10 2-a AE002M2-29 2-74 AK006R2-00 2-28 AS006M2-00 2-16

DSB3665-02

Contextual Info: High Power Multi-Throw UHF PIN Switches EHAlpha DSB3665-01, DSB3665-02, DSB3667-01 Features Hermetically Sealed Chips Stripline and T O -8 Can Packages SP2T and SP3T Designs 100 W att CW Operation Maximum Ratings 10 to 1000 MHz Operating Temperature: -6 5 °C to +150°C

Contextual Info: GaAs MMIC Power Amplifier [jHAIph in S O I C 16 Plastic Package AP103-64 Features • Saturated Power Up To 31 dBm ■ 6 Volt Operation ■ Efficiency Up To 65% ■ Idle Current Typically Less Than 80 mA ■ On Chip Bias Network Converts - 4 Volt Supplies

Contextual Info: GaAs MMIC 2 Watt High Linearity ËBÀlph Cellular SPDT Switch DC-2000 MHz A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Extremely Low Cost ■ Requires Fixed Positive Bias ■

Contextual Info: •ísSKS GaAs MMIC Two Watt High î ? ‘ 1 _. Linearity Cellular SPDT Switch EBAIp'hi AS103-59 Features ■ High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control

Contextual Info: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C

Contextual Info: GaAs MMIC SPDT FET Switch EBAlph Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 GHz ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation ProductVTemp. Stability ■

Contextual Info: GaAs SPDT FET MMIC 4 Watt TR Switch ESAlph in 8 Lead SOIC Package DC-2.5 GHz AH002R2-12 Features • TR Switch ■ Low Insertion Loss < 0.5 dB @ 900 MHz ■ Designed for Cellular Radio Applications ■ Medium Power Handling Capability, 1 dB Compressed at 5W, 900 MHz, -1 0 V Bias

SMS1526-10

Contextual Info: Schottky Mixer and Detector Diodes in EEAlpha Surface Mount Plastic Packages SMS Series Features For High Volume Commercial Applications SOT 23 SOD 323 S m all Surface M ount Packages SOT 143 Low C onversion Loss T ight P aram eter D istribution High Signal Sensitivity