AIRPLANE GPS Search Results

Contextual Info: BASIC Stamp 2p24 GPS Airplane Datalogger Using the BS2p24’s ample RAM and EEPROM program space can store coordinates from an R/C airplane flight for further analysis by Ken Gracey and Jon Williams BASIC Stamp users often discuss how to access and log GPS data from a handheld unit. Some of the

2SK210

Contextual Info: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)

2SK302

Contextual Info: 2SK302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302 FM Tuner, VHF RF Amplifier Applications Unit: mm • Low reverse transfer capacitance: Crss = 0.035 pF typ. • Low noise figure: NF = 1.7dB (typ.) • High power gain: Gps = 28dB (typ.)

2SK882

Contextual Info: 2SK882 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK882 FM Tuner, VHF RF Amplifier Applications Unit: mm • Low reverse transfer capacitance: Crss = 0.025 pF typ. · Low noise figure: NF = 1.7dB (typ.) · High power gain: Gps = 28dB (typ.)

2SK210

Abstract: 2SK2104 2SK2105
Contextual Info: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) · Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) · High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)

2sk241

Abstract: 2SK2416 24E1D
Contextual Info: 2SK241 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK241 FM Tuner, VHF and RF Amplifier Applications • Low reverse transfer capacitance: Crss = 0.035 pF typ. · Low noise figure: NF = 1.7dB (typ.) · High power gain: GPS = 28dB (typ.) ·

2SK241

Abstract: 2sk2416
Contextual Info: 2SK241 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK241 FM Tuner, VHF and RF Amplifier Applications • Low reverse transfer capacitance: Crss = 0.035 pF typ. • Low noise figure: NF = 1.7dB (typ.) • High power gain: GPS = 28dB (typ.)

2SK882

Contextual Info: 2SK882 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK882 FM Tuner, VHF RF Amplifier Applications Unit: mm • Low reverse transfer capacitance: Crss = 0.025 pF typ. • Low noise figure: NF = 1.7dB (typ.) • High power gain: Gps = 28dB (typ.)

2SK192A

Abstract: 2SK192A BL
Contextual Info: 2SK192A TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK192A FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)

2SK192A

Contextual Info: 2SK192A TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK192A FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) · Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) · High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)

2SK302

Contextual Info: 2SK302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302 FM Tuner, VHF RF Amplifier Applications Unit: mm • Low reverse transfer capacitance: Crss = 0.035 pF typ. · Low noise figure: NF = 1.7dB (typ.) · High power gain: Gps = 28dB (typ.)

Common PCN Handset Specification Phase 2 v4.2

Abstract: sim 300s gsm modem datasheet Common PCN Handset Specification v4.2 sim 300 GSM MODEM AT commands GSM0408 NITZ Siemens MC75 str 630 GSM 07.07 siemens 230 96
Contextual Info: Wireless EDGE Modems MultiModem EDGE with Bluetooth Interface MTCBA-E-B MultiModem EDGE with Ethernet Interface (MTCBA-E-EN) MultiModem EDGE with GPS Functionality (MTCBA-E-GP) MultiModem EDGE (MTCBA-E) MultiModem EDGE with USB (MTCBA-E-U)

2SK210

Contextual Info: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)

2SK302

Contextual Info: 2SK302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302 FM Tuner, VHF RF Amplifier Applications Unit: mm • Low reverse transfer capacitance: Crss = 0.035 pF typ. • Low noise figure: NF = 1.7dB (typ.) • High power gain: Gps = 28dB (typ.)

2SK882

Contextual Info: 2SK882 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK882 FM Tuner, VHF RF Amplifier Applications Unit: mm • Low reverse transfer capacitance: Crss = 0.025 pF typ. • Low noise figure: NF = 1.7dB (typ.) • High power gain: Gps = 28dB (typ.)

HP203B/HP206C

Contextual Info: HP203B/HP206C What is the application of the new pressure sensor HP203B,HP206C? Weather forecast application — Small size with SMD and the port just need two IO. — Built-in compensation algorithm, application MCU does not need any calculation.

fm transmitter project report

Abstract: uav design rc airplane transmitter receiver ac servo controller schematic elevator schematic schematic diagram of ip camera schematic diagram of ip camera sensor rc car car Speed Sensor project nios 2 processor images
Contextual Info: Aerial Photographic System Using an Unmanned Aerial Vehicle Second Prize Aerial Photographic System Using an Unmanned Aerial Vehicle Institution: Chungbuk National University Participants: Hyuk Joong Kwon, Woo Joong Kim, Jang Geun Kim, Sang Bae Park Instructor:

honeywell egpws

Abstract: Honeywell Document 060-4267-000 0604267-000 Honeywell arinc MK VII EGPWS autopilot flight management system runway lights project airport radar memory stick
Contextual Info: MK V and MK VII Enhanced Ground Proximity Warning System EGPWS and Runway Awareness Advisory System (RAAS) Pilot Guide 060-4241-000 • Rev. E - December 2003 MK V & MK VII EGPWS Pilot Guide This document is an unpublished work Copyright 2003 Honeywell International Inc.

skf control board

Contextual Info: HECTRONIC AB Hectronic main office in Uppsala, Sweden. Company presentation Hectronic AB, founded in 1989, is Sweden’s leading developer of Embedded PC’s. We offer innovative solutions and cost effective product development of IT based products to customers. We combine our own developed hardware

2SK1771

Contextual Info: 2SK1771 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK1771 FM Tuner, VHF RF Amplifier Applications • Superior inter modulation performance. · Low noise figure: NF = 1.0dB typ. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol

2SK881

Abstract: 2sk881gr
Contextual Info: 2SK881 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK881 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • Low noise figure: NF = 2.5dB typ. (f = 100 MHz) • High forward transfer admittance: |Yfs| = 9 mS (typ.) Maximum Ratings (Ta = 25°C)

2SK161

Abstract: 2SK161GR 2SK1615 TOSHIBA 2SK161 2SK161Y 2sk161 transistor 2SK1614 dsa0049037 transistor 2sk161
Contextual Info: 2SK161 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK161 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • Low noise figure: NF = 2.5dB typ. (f = 100 MHz) • High forward transfer admittance: |Yfs| = 9 mS (typ.) •

3SK232

Contextual Info: 3SK232 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK232 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance. · Low reverse transfer capacitance.: Crss = 20 fF typ. · Low noise figure.: NF = 1.5dB (typ.)

3SK226

Abstract: toshiba cross
Contextual Info: 3SK226 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK226 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications Unit: mm • Superior cross modulation performance. · Low reverse transfer capacitance: Crss = 0.015 pF typ.