AI02149 Search Results

Contextual Info: SGS-THOMSON MOgtMlIgtLIgtg'ü’M D tgi_M28W431 4 Mb 512K x 8, Block Erase LOW VOLTAGE FLASH MEMORY 2.7V to 3.6V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS

M28W431

Contextual Info: M28W431 4 Mbit 512Kb x8, Boot Block Low Voltage Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware

1N914

Abstract: M28W431
Contextual Info: M28W431 4 Mb 512K x 8, Block Erase LOW VOLTAGE FLASH MEMORY 2.7V to 3.6V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware

wp 39

Abstract: AN933 M28F211 M28F410 M28F411 M28W231
Contextual Info: AN933 APPLICATION NOTE WRITE PROTECT FUNCTION for 2Mb and 4Mb BOOT BLOCK FLASH MEMORIES INTRODUCTION The performance of the 2Mb and 4Mb Dual Voltage Boot Block Flash memories, M28F2xx and M28F4xx families has been enhanced by the introduction of a Write Protect function using the WP pin.

1N914

Abstract: M28W431
Contextual Info: M28W431 4 Mbit 512Kb x8, Boot Block Low Voltage Flash Memory 2.7V to 3.6V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware