AHW 25 Search Results

AHW-25

Abstract: AHW-10 AHW-250 strong 5202 AHW 19 AHW 25
Contextual Info: AHW Series Gold Aluminum Housed Wirewound Resistors MERITEK FEATURES • High power rating, small size and ultra precision. • Standard winding &non-inductive winding types. • High stability, strong construction. ELECTRICAL SPECIFICATION Characteristics

Wirewound Resistors 300w

Abstract: AHW-10 AHW-25
Contextual Info: AHW Series Gold Aluminum Housed Wirewound Resistors MERITEK FEATURES • High power rating, small size and ultra precision. • Standard winding &non-inductive winding types. • High stability, strong construction. ELECTRICAL SPECIFICATION Characteristics

RK-71

Abstract: ctsk UO-35
Contextual Info: rEHEPATOPHbm nEHTOfl PENTODE rK-71 reHepaTopHbiti neHTOfl TK-71 npe,qHa3HaMeH r e H e p u p o B a H u n K o n e 6 aHw /i m y c u n e H u n m o li^ h o c tm b C T am iO H apH bix p a flM O T e x H M H e cK M x y c T a H O B K a x . OBLIQUE CBEflEHMfl K a T O fl -

ry29

Abstract: rY-29
Contextual Info: rEHEPATOPHblM TETPOfl ry-29 1 * " TETRODE T e H e p a T o p H b iM n p e flH a 3 H aH eH p ,m a b o m h o i/i j i y n e B o i i T e T p o fl r Y -2 9 re H e p i/ip o B a H M fl K o n e 6 aHw?i v\ y e n - zieHUH m o lh h o c tm b M e T p 0 B 0 M f lM a n a 3 0 He b p a flM O T e x -

Contextual Info: 82091AA 13.0 5-218 DATA SEPARATOR CHARACTERISTICS FOR FLOPPY DISK MODE 82091AA Jitter Tolerance measured in percent. Capture range expressed as a percent of data rate, i.e., ±3 % percent. • = Test Points: 250 Kbps, 300 Kbps, 500 Kbps and 1 Mbps are center, ± 5 percent @ 60 percent jitter.

Contextual Info: ADAM TECH ADAM TECHNOLOGIES INC. D-SUBMINIATURE CRIMP AND POKE SYSTEM DPR / DSR SERIES INTRODUCTION: Adam Tech Crimp and Poke D-Subs are a time and labor saving alternative to solder type D-Subs for cable assem blies and harnesses. Individual contacts are easily crimped onto discrete wires

HM65256BLP-10

Abstract: dp - 20t DG250 HM65256BFP-12T HM65256B HM65256BFP-10T HM65256BFP-15T HM65256BFP-20T HM65256BLFP-10T HM65256BLFP-12T
Contextual Info: HM65256B Series 5.0 V S u p p ly 32,768-w ord x 8-bit H ig h S p e e d P s u e d o S ta tic R A M Features • Single 5 V ±10% • Access time — CE access time: 100/120/150/200 ns — Address access time: 50/60/75/100 ns (in static column mode) • Cycle time

FSP 30

Contextual Info: HM511666 Series Preliminary 65,536-Word x 16-Bit Dynamic RAM • DESCRIPTION HM511666JP Series The Hitachi HM511666 are CMOS dynamic RAM orga­ nized as 65,536-word x 16-bit. HM511666 have realized higher density, higher performance and various functions by

44-PIN

Abstract: LH5PV16256
Contextual Info: LH5PV16256 CMOS 4M 256K x 16 Pseudo-Static RAM FEATURES DESCRIPTION • 262,144 words × 16 bit organization The LH5PV16256 is a 4M bit Pseudo-Static RAM with a 262,144 words × 16 bit organization. • Power supply: +3.0 ± 0.15 V • Access time: 120 ns (MAX.)

Contextual Info: Rev Description A W 0# - APPROVFD: DATF: A B TITI F: Date 5/7/04 5/14/04 1/17/11 RELEASED ADDED HOLD DIM. REDRAWN Appr .508 [1 2 .9 0 ] .075 [1 .9 0 ] I=f .512 [1 3 .0 0 ] □ □ I — .531 .150 .130 [3 .8 0 ] [3.5 0] .028 [0 .7 0 ] .035 [0 .9 0 ] .102 [2 .6 0 ]

Contextual Info: HM511666 Series Preliminary 65,536-Word x 16-Bit Dynamic RAM • DESCRIPTION HM511666JP Series The Hitachi HM511666 are CMOS dynamic RAM orga­ nized as 65,536-word x 16-bit. HM511666 have realized higher density, higher performance and various functions by

ssl 110 sn

Abstract: t1c4 SMAJ SERIES io SMA-J RL-209 RL209 8MAJ24A s3 86A uc 1604
Contextual Info: SMAJ SERIES FEATURES l lwngto2OoVPfw For aurtaa mourMod appllm l Raltabbbw~ l -amI ~-pbElctochnlque Phslklluuwhu underwaoa Labmmy lhrnmaMQ claWkMM OlVO 0 HIgIl toinpwrha aokMng: 250 410 SocQndr rr trrwulr l TVprcslblesath&nluA&ow10V l l Fa~respormethw:typkAlyb+rthMl.Op

D425 transistor

Abstract: TRANSISTOR D425 D425 2SA1602 rfft 2SC4154 X10-3 MARKING HRA j506
Contextual Info: SMALL-SIGNAL TRANSISTOR 2SC4154 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION 2SC4154 is a super mini package resin sealed silicon NPN epitaxial OUTLINE DRAWING Unit: mm 2 .1± 0.2 type transistor. It is designed for low frequency voltage amplify application.

uPD70F3561

Abstract: uPD70F35 V850E2/FK4-H
Contextual Info: dfgdfg Cover Data Sheet 32 V850E2/FK4-H 32-bit Single-Chip Microcontroller µPD70F3561 Renesas Electronics www.renesas.com R01DS0143ED0100 2013-05-24 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change

UI-56

Abstract: 1231N U-134 1231H Scans-048 L1221 DSAGER00048 UCCR1
Contextual Info: U NITRO CEMr Wraaoniaoz p#oz. z kluczowanq ARW. Uklady te oharakteryzuj* si§ moállwogolq: - regulaojl wzmoonienia, - rogulaojl progu zadzlalanía ARW, - regulaojl opóénienla ARW do glowioy oras du¿q staioéoiq naplQola wyjéoiowego p.oz* przy zmianaoh napicola wejáoiowego.

DM74S189

Contextual Info: DM54S189/DM7 4S189/DM54S189 A/DM7 4S189 A 53!] National dtjA Semiconductor DM54S189/DM74S189 64-Bit 16 x 4 TRI-STATE RAM DM54S189A/DM74S189A High Speed 64-Bit TRI-STATE RAM General Description These 64-bit active-element memories are monolithic Sctiottky-clamped transistor-transistor logic (TTL) arrays or­

1231N

Abstract: 1221N UL1221 U-134 1231H
Contextual Info: ÏJjUIMITRR L1B CEM I Wenaoniaoz p , o z . U L 1221N U L 1231N z kluczow anç ARW. Uklady te o h a ra k te - r y z u j^ s l ç m oàllw ogol^ : Wzmpcniacz p.cz. z kluczowairç ARW - r e g u la o j l wamoonlenla, - r o g u l a o j l progu z a d z ia îa n ia ARW,

uPD70F35

Abstract: UPD70F40 R01DS0142ED0100
Contextual Info: dfgdfg Cover Data Sheet 32 V850E2/FL4 32-bit Single-Chip Microcontroller µPD70F3559 µPD70F4011 µPD70F3560 µPD70F4012 Renesas Electronics www.renesas.com R01DS0142ED0100 2013-05-24 Notice 1. All information included in this document is current as of the date this

Kappa Technologies

Abstract: delay line kappa DT44CB050 DT44CB100 DT44CB150 DT44CB200 DT44CB250 DT44CB300 DT44CB350 DT44CB400
Contextual Info: SERIES D L 4 4 /D T 4 4 TTL SCHOTTKY 1 4 -P IN • 4 INDEPENDENT DELAYS QUADRUPLE DIGITAL DELAY LINE RECOMMENDED OPERATING C O N DITIO NS VC C V|h V|l l|K Iq h Iq i FEATURES • • • • • S u p ply V o lta g e H igh-Level In p u t V o lta g e L o w -le v e l In p u t V o lta g e

PT42CB020

Abstract: 32-PIN PT42 PT42CB010 PT42CB030 PT42CB040 PT42CB060 PT42CB100 PT42CB120 delay line kappa
Contextual Info: SERIES PT42 TTL SCHOTTKY 3 2 -P IN 4-BIT PROGRAMMABLE DELAY LINE RECOMMENDED OPERATING CON DITIO NS V c c S u p ply V o lta g e V|H H igh-Level In p u t V o lta g e % L o w -le v e l In p u t V o lta g e l|K In p u t C la m p C urre n t Iq h H igh-Level O u tp u t C u rre n t

delay line kappa

Abstract: DL08 DL08CB250
Contextual Info: SERIES D L 0 8 C B /D T 0 8 C B TTL SCHOTTKY 5-TAP TTL DELAY LINE 8-PIN M IN RECOMMENDED OPERATING C O N DITIO NS 4.75 2.0 V|H S u p ply V o lta g e H igh-Level In p u t V o lta g e V|l l|K ¡OH Iq l T^ Low-Level In p u t V o lta g e In p u t C la m p C urre n t

uPD70F3564

Abstract: V850E2/FL4-H
Contextual Info: dfgdfg Cover Data Sheet 32 V850E2/FL4-H 32-bit Single-Chip Microcontroller µPD70F3564 Renesas Electronics www.renesas.com R01DS0144ED0100 2013-05-24 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change

uPD70F3558

Abstract: V850E2 FK4 uPD70F3555 renesas v850e2 hardware manual FK4-G V850E2/FK4 uPD70F35 v850e2 Fx4
Contextual Info: dfgdfg Cover Data Sheet 32 V850E2/FK4 V850E2/FK4-G 32-bit Single-Chip Microcontroller µPD70F3555 µPD70F4007 µPD70F3556 µPD70F4008 µPD70F3557 µPD70F4009 µPD70F3558 µPD70F4010 µPD70F3592 Renesas Electronics www.renesas.com R01DS0141ED0100 2013-05-24

APPA TECH CIRCUIT

Abstract: DL08CB250 LDL08 DT08CB250 delay line kappa
Contextual Info: SERIES D L 0 8 C B /D T 0 8 C B TTL SCHOTTKY 5-TAP TTL DELAY LINE 8-PIN M IN RECOMMENDED OPERATING C O N DITIO NS 4.75 2.0 V|H S u p ply V o lta g e H igh-Level In p u t V o lta g e V|l l|K ¡OH Iq l T^ Low-Level In p u t V o lta g e In p u t C la m p C urre n t