AH-16 TRANSISTOR Search Results

BCX55C

Abstract: BCX51 BCX51-10-AC BCX51-16-AD BCX52 BCX52-10-AG BCX52-16-AM BCX53 BCX54 BCX55
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS lee,e9 Ccnnl lAnu.nmc n Gii2 COMPLEMENTARY I TYPE - BCX51 - BCX54 BCX52 - BCX55 c BCX53 - BCX56 PARTMARKING BCX51 DETAILS - -AA BCX52 - AE BCX53-I O- AK E \@ c BCX53-I 6- AL BCX52-16-AM BCX51-16-AD - AH BCX53

MSM5117100

Contextual Info: DESCRIPTION The MSM5117100 is a 16 Megabit dynamic memory organized as 16,777,216 word by 1 bit. The technology used to fabricate the MSM5117100 is OKI's CMOS silicon gate process technology. The device operates at a single + 5 V power supply. AH inputs and outputs are TTL compatible.

CDF-AEC-Q100-008

Abstract: uv flame sensor 4 pin hall sensor hall current sensor 3A hall sensor 80 L 3 PIN hall effect sensor 80 L hall effect sensor hall effect 4 pin out hall effect sensor 4 pin ATS665LSG
Contextual Info: PRELIMINARY INFORMATION subject to change without notice September 16, 2002 1 2 3 4 Pin 1 = Supply Pin 2 = Output Pin 3 = Test Pin 4 = Ground Dwg. AH-013 ABSOLUTE MAXIMUM RATINGS at TA = 25°C Supply Voltage, VCC . 26.5 V Reverse Supply Voltage, VRCC . -18 V

EN 60947-5-1

Abstract: IEC 60947-5-1 light control sensor diode sy 710 diode sy 171 sy 171 line diagram inverter 1MW 60947-5-1 AH36 fluorescent lamp starter
Contextual Info: SF4-AH SPECIFICATIONS Individual specifications Model No. Item SF4-AH8 -H SF4-AH12(-H) SF4-AH16(-H) SF4-AH20(-H) SF4-AH24(-H) SF4-AH28(-H) SF4-AH32(-H) SF4-AH36(-H) No. of beam channels 12 8 16 20 24 28 32 36 20 mm 0.787 in Beam pitch 190 mm 7.48 in 270 mm 10.63 in 350 mm 13.78 in 430 mm 16.929 in 510 mm 20.079 in 590 mm 23.228 in 670 mm 26.378 in 750 mm 29.528 in

TRANSISTOR AH-16

Abstract: AH-16 transistor Transistor AH10 AH16 ah-16 AH16 transistor AH-16 npn TRANSISTOR AH-10 AH-16 on semiconductor AH MARKING SOT223
Contextual Info: BCP53T1 Series Preferred Devices PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

TRANSISTOR AH-16

Abstract: AH MARKING SOT223 AH-16 on semiconductor AH-16 transistor AH16 SOT223 sot 223 marking code AH AH-16 npn TRANSISTOR AH-10 ah-16 AH16 transistor
Contextual Info: BCP53T1 Series Preferred Devices PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

ci 741

Abstract: GALVANTECH UA 741 datasheet GVT72256A16 72256A16
Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT72256A16 REVOLUTIONARY PINOUT 256K X 16 256K x 16 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT72256A16 is organized as a 262,144 x 16 SRAM using a four-transistor memory cell with a high

UA 741 datasheet

Abstract: ci 741 GVT7264A16 7264A16
Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT7264A16 REVOLUTIONARY PINOUT 64K X 16 64K x 16 SRAM WITH SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT7264A16 is organized as a 65,536 x 16 SRAM using a four-transistor memory cell with a high performance,

PF351

Abstract: GVT73256A16
Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT73256A16 REVOLUTIONARY PINOUT 256K X 16 256K x 16 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT73256A16 is organized as a 262,144 x 16 SRAM using a four-transistor memory cell with a high

TRANSISTOR AH-16

Abstract: AH-16 transistor TRANSISTOR AH-10 BCP53T1G AYW marking code IC bcp53 transistor datasheet BCP53-10T1 16T1 BCP53 BCP53T1
Contextual Info: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • High Current: 1.5 A

TRANSISTOR AH-16

Abstract: SBCP53 sbcp53-10 AH MARKING SOT223 Transistor AH10 BCP53-16T1G sot 223 marking code AH 16T1G bcp53 SOT-223
Contextual Info: BCP53 Series, SBCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

sot-23 MARKING CODE ZA

Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Contextual Info: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same

BLX14

Abstract: SOT-48 BLX88 BLX66 BLY93 BLY94 BLY33 BLY34 2N3375 810BLY transistor
Contextual Info: Transistors n-p-n r.f. power transistors book 1 parts 1 and 2 - § Type No. Maximum Ratings ^b o v ceo *cm ° K hFE 'ciav I ® £ % T* at Ptot m in - m a x - lc f r VcE sat> m ' n* m a x - at 'c Po ,8 *• GP at ty p . f at V cc Tm£ “ (V) (V) IA)

TRANSISTOR AH-16

Abstract: AH MARKING SOT223 TRANSISTOR AH-10 16T1 BCP53 BCP53T1 BCP53T3 BCP56 sot 223 marking code AH AH16 transistor
Contextual Info: BCP53T1 Series Preferred Devices PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. PN4142 PN4143 Electrical Characteristics <Ta=25”C, U n ie » Otherwise Specified) ^C80 ^CEO ^EBO Pd (W) (V) (A) (V) (V) Min Min Min @Tc=25"( 60 60 40 40 5 'c & ^CE 'cBO VCB 'ces ^CE I>fe (mA) (V)

SAMSUNG UG-13B01

Abstract: DMF666AN samsung ug-13b01 service manual DMF651 dmf660n optrex dmf660n eg2401 LM24010Z UG-13B-01 dmf605
Contextual Info: TECHNICAL USER’S MANUAL FOR: PC/104 Board MSM286 O:\TEXT\HANDB-V6\MSM286.DOC Nordstrasse 4F, CH-4542 Luterbach Tel.: +41 0 65 41 53 36 - Fax: +41 (0)65 42 36 50 DIGITAL-LOGIC AG MSM286 Manual V6.4 COPYRIGHT  1992-95 BY DIGITAL-LOGIC AG No part of this document may be reproduced, transmitted, transcribed, stored in a retrieval system, in

2M4409

Abstract: 2N4294 2N4295 2N4353 2N4400 2N4401 2N4424 2N4944 2N4946 2N4951
Contextual Info: TO-92 Plastic Package Transistors NPN IL Maximum Ratings Type No. Electrical C haracteristics (Ta=25"C, Unless Otherwise Specified) Vcbo ^CEO Vebo 'c pD (V) (V) (V) (W) (A) Min Min Min Tc=25°< 2N4294 30 12 5 0.625 0.2 1(30 *CES ^CE ^FE (|iA) 8 (V ) (mA) e (v)

Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Po (W) J 1 Type Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min CSB1426P 20 20 5 0.75 3 0.1 CSB1426Q 20 20 5 0.75 3 CSB1426R 20 20 5 0.75 MPS751

BF199

Contextual Info: IL TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BCX58-9 Electrical Chatacteristics (Ta=25”C, Unless Otherwise Specified) V C BO ^CEO ^EBO (V) Min (V) Min (V) Min Pd k (W) (A) @Tc=25°( 32 32 7 0.625 0.1 *CBO ^CB ^CES ^C E (PA) 8(V) (|iA) @ (V)

CN650

Abstract: CN303 CN304 CN450 CN451 CN452 CN453 CN454 CN649 CN651
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. CN303 CN304 ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 45 45 5 70 70 5 Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) *c Pd (W) (A) @Tc=25°< 0.3 ^CBO ^ CB *CES Vet (MA) @(V) (PA) @(V)

Contextual Info: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. VCBo (V) Min ^ ceo V EBO (V) Min (V) Min 'c (W) (A) @Tc=25°c *CBO V CB Max 0 (V) 3 (V) w Max Min m @ ^CE (mA) (V) Max ^CE(SAT)

CP756

Abstract: CP757 CSA562 CSA562Y CSA643 CSA643G CSA643R
Contextual Info: L TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. CP756 CP757 Electrical Characteristics (Ta=25”C, Unless Otherwise Specified) VCBO VCE0 V E80 Pd (W) (V) (V) (A) (V) Min Min Min @Tc=25°< ' cbo VCB 'c e s VCE (pA) @ (V) (HA) @(V) Max Max

Contextual Info: * TO-92 Piastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Po 'c (V). (A) Min @Tc=25°c 'c& (mA) NF Freq c„ CDIL (dB) (MHz) (PF) Case Max Max Style V cbo ^CEO (V) Min (V) Min 2N3693

transistor BC170

Abstract: BC170C TRANSISTOR BC170B BC170B BC170 transistor BC170c BC170A BC170 TRANSISTOR bc172 bc174b
Contextual Info: IL TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. 2N5S15 Electiical Characteristics (Ta=25°C, Unless Otherwise Specified) 'c ^CBO ^CEO ^EBO Po (W) (V) (V) (V) (A) ,/in Min Min Tc=25°c 250 250 6 0.625 0.5 9 IcBO VCB ^CES ^CE W @ (V) M