AH-16 TRANSISTOR Search Results

BCX55C

Abstract: BCX51 BCX51-10-AC BCX51-16-AD BCX52 BCX52-10-AG BCX52-16-AM BCX53 BCX54 BCX55
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS lee,e9 Ccnnl lAnu.nmc n Gii2 COMPLEMENTARY I TYPE - BCX51 - BCX54 BCX52 - BCX55 c BCX53 - BCX56 PARTMARKING BCX51 DETAILS - -AA BCX52 - AE BCX53-I O- AK E \@ c BCX53-I 6- AL BCX52-16-AM BCX51-16-AD - AH BCX53

MSM5117100

Contextual Info: DESCRIPTION The MSM5117100 is a 16 Megabit dynamic memory organized as 16,777,216 word by 1 bit. The technology used to fabricate the MSM5117100 is OKI's CMOS silicon gate process technology. The device operates at a single + 5 V power supply. AH inputs and outputs are TTL compatible.

CDF-AEC-Q100-008

Abstract: uv flame sensor 4 pin hall sensor hall current sensor 3A hall sensor 80 L 3 PIN hall effect sensor 80 L hall effect sensor hall effect 4 pin out hall effect sensor 4 pin ATS665LSG
Contextual Info: PRELIMINARY INFORMATION subject to change without notice September 16, 2002 1 2 3 4 Pin 1 = Supply Pin 2 = Output Pin 3 = Test Pin 4 = Ground Dwg. AH-013 ABSOLUTE MAXIMUM RATINGS at TA = 25°C Supply Voltage, VCC . 26.5 V Reverse Supply Voltage, VRCC . -18 V

EN 60947-5-1

Abstract: IEC 60947-5-1 light control sensor diode sy 710 diode sy 171 sy 171 line diagram inverter 1MW 60947-5-1 AH36 fluorescent lamp starter
Contextual Info: SF4-AH SPECIFICATIONS Individual specifications Model No. Item SF4-AH8 -H SF4-AH12(-H) SF4-AH16(-H) SF4-AH20(-H) SF4-AH24(-H) SF4-AH28(-H) SF4-AH32(-H) SF4-AH36(-H) No. of beam channels 12 8 16 20 24 28 32 36 20 mm 0.787 in Beam pitch 190 mm 7.48 in 270 mm 10.63 in 350 mm 13.78 in 430 mm 16.929 in 510 mm 20.079 in 590 mm 23.228 in 670 mm 26.378 in 750 mm 29.528 in

TIP115

Abstract: TIP-115 TIP116 TIP117 transistors pnp
Contextual Info: Darlington Power Transistors PNP TIP115/116/117 Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant TO-220 Mechanical Data Case: TO-220, Plastic Package Terminals:

TRANSISTOR AH-16

Abstract: AH-16 transistor Transistor AH10 AH16 ah-16 AH16 transistor AH-16 npn TRANSISTOR AH-10 AH-16 on semiconductor AH MARKING SOT223
Contextual Info: BCP53T1 Series Preferred Devices PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

TIP125

Abstract: TIP126 TIP127 tip127 data
Contextual Info: Darlington Power Transistors PNP TIP125/126/127 Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant TO-220 Mechanical Data Case: TO-220, Plastic Package Terminals:

of TIP122

Abstract: transistor tip120 TIP120 TIP121 TIP122
Contextual Info: Darlington Power Transistors NPN TIP120/121/122 Darlington Power Transistors (NPN) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant TO-220 Mechanical Data Case: TO-220, Plastic Package Terminals:

TRANSISTOR AH-16

Abstract: AH MARKING SOT223 AH-16 on semiconductor AH-16 transistor AH16 SOT223 sot 223 marking code AH AH-16 npn TRANSISTOR AH-10 ah-16 AH16 transistor
Contextual Info: BCP53T1 Series Preferred Devices PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

ci 741

Abstract: GALVANTECH UA 741 datasheet GVT72256A16 72256A16
Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT72256A16 REVOLUTIONARY PINOUT 256K X 16 256K x 16 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT72256A16 is organized as a 262,144 x 16 SRAM using a four-transistor memory cell with a high

UA 741 datasheet

Abstract: ci 741 GVT7264A16 7264A16
Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT7264A16 REVOLUTIONARY PINOUT 64K X 16 64K x 16 SRAM WITH SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT7264A16 is organized as a 65,536 x 16 SRAM using a four-transistor memory cell with a high performance,

PF351

Abstract: GVT73256A16
Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT73256A16 REVOLUTIONARY PINOUT 256K X 16 256K x 16 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT73256A16 is organized as a 262,144 x 16 SRAM using a four-transistor memory cell with a high

GVT73256A16

Contextual Info: GALVANTECH, INC. GVT73256A16 REVOLUTIONARY PINOUT 256K X 16 ASYNCHRONOUS SRAM 256K x 16 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • The GVT73256A16 is organized as a 262,144 x 16 SRAM using a four-transistor memory cell with a high

GVT7264A16

Contextual Info: GALVANTECH, INC. GVT7264A16 REVOLUTIONARY PINOUT 64K X 16 ASYNCHRONOUS SRAM 64K x 16 SRAM WITH SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • The GVT7264A16 is organized as a 65,536 x 16 SRAM using a four-transistor memory cell with a high performance,

MRF660

Abstract: MHQ6002HX MHM25N20HX MBR5825 MRF5160 MM3227H MHM12N50HX MBR5825H MM3227 mrf522
Contextual Info: MOTOROLA SC XSTRS/R F 2 bE D • b3b?2S4 GGT0Ô7G 4 ■ T - MIL-Processed Semiconductors (Continued) SELECTOR GUIDE POWER TRANSISTORS TMOS FETs These TMOS Power FETs are designed for high speed power switching applications such as switching regulators, converters, solenoid and relay drivers, and PWM motor

TRANSISTOR AH-16

Abstract: AH-16 transistor TRANSISTOR AH-10 BCP53T1G AYW marking code IC bcp53 transistor datasheet BCP53-10T1 16T1 BCP53 BCP53T1
Contextual Info: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • High Current: 1.5 A

TRANSISTOR AH-16

Abstract: SBCP53 sbcp53-10 AH MARKING SOT223 Transistor AH10 BCP53-16T1G sot 223 marking code AH 16T1G bcp53 SOT-223
Contextual Info: BCP53 Series, SBCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

Contextual Info: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • High Current

CSC3331V

Abstract: CSC3355 CSC9022 CSD261 CSD2610 CSD261G CSD261Y CSD471A CSD471AG CSD471AY
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. CSC3331V Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^ceo ^CEO ^EBO Pd M (W) (V) (A) 00 Min Min Min @Tc=25<>< 60 50 6 0.5 CSC3355 20 12 3 0.6 CSC9022 50 40 5 0.3 CSD261

TRANSISTOR AH-16

Abstract: AH-16 transistor TRANSISTOR AH-10 AH MARKING SOT223 onsemi SOT-223 16T1 BCP53 BCP53T1 BCP53T3 BCP56
Contextual Info: BCP53T1 Series Preferred Devices PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

sot-23 MARKING CODE ZA

Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Contextual Info: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same

BLX14

Abstract: SOT-48 BLX88 BLX66 BLY93 BLY94 BLY33 BLY34 2N3375 810BLY transistor
Contextual Info: Transistors n-p-n r.f. power transistors book 1 parts 1 and 2 - § Type No. Maximum Ratings ^b o v ceo *cm ° K hFE 'ciav I ® £ % T* at Ptot m in - m a x - lc f r VcE sat> m ' n* m a x - at 'c Po ,8 *• GP at ty p . f at V cc Tm£ “ (V) (V) IA)

Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. LTj •VCBO ^CEO ^EBO >D (V) (W) (A) (V) (V) Min Min Min @Tc=25°( hre @ *CBO ^CB ' ces ^CE (mA) @ (V) (PA) (V) Max Min Max