AF190 Search Results
AF190 Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AF190 | Unknown | Cross Reference Datasheet | Scan | 31.49KB | 1 | ||
| AF190 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 86.39KB | 1 | ||
| AF190 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 33.65KB | 1 | ||
| AF190 | Unknown | Shortform Transistor Datasheet Guide | Short Form | 89.17KB | 1 | ||
Z2SMAF190
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SUNMATE electronic Co., LTD | Surface mount silicon Zener diode with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and high reliability in SMAF package.Surface mount silicon Zener diode with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and high reliability in SMAF package.Surface mount silicon Zener diode with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and operating junction temperature from -55 to +175°C. | Original | ||||
SMAF190A
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SUNMATE electronic Co., LTD | Surface mount transient voltage suppressor diode with 400W peak pulse power, 5.0 to 440V breakdown voltage range, glass passivated die, and plastic UL 94V-0 rated package for surge protection applications.Surface mount transient voltage suppressor diode with 400W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diode with 400W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and plastic UL 94V-0 rated case.Surface mount transient voltage suppressor diode with 400W peak pulse power, 5.0 to 440V working voltage range, glass passivated die, and SMAF package for reliable surge protection in electronic circuits.Surface mount transient voltage suppressor diode with 400W peak pulse power, 5.0 to 440V breakdown voltage range, glass passivated die, unidirectional and bidirectional options, SMAF package, operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 5.0V to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die, operating temperature from -55 to +150C.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die, operating temperature -55 to +150°C.Surface mount transient voltage suppressor diode with 400W peak pulse power, 5.0 to 440V breakdown voltage range, SMAF package, unidirectional and bidirectional versions available, operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diode with 400W peak pulse power, 5.0 to 440V voltage range, glass passivated die, unidirectional and bidirectional versions, SMAF package, and low leakage current.Surface mount transient voltage suppressor diode with 400W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and operating temperature from -55 to +150°C. | Original | ||||
SMAF190CA
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SUNMATE electronic Co., LTD | Surface mount transient voltage suppressor diode with 400W peak pulse power, 5.0 to 440V breakdown voltage range, glass passivated die, and plastic UL 94V-0 rated package for surge protection applications.Surface mount transient voltage suppressor diode with 400W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diode with 400W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and plastic UL 94V-0 rated case.Surface mount transient voltage suppressor diode with 400W peak pulse power, 5.0 to 440V working voltage range, glass passivated die, and SMAF package for reliable surge protection in electronic circuits.Surface mount transient voltage suppressor diode with 400W peak pulse power, 5.0 to 440V breakdown voltage range, glass passivated die, unidirectional and bidirectional options, SMAF package, operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 5.0V to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die, operating temperature from -55 to +150C.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die, operating temperature -55 to +150°C.Surface mount transient voltage suppressor diode with 400W peak pulse power, 5.0 to 440V breakdown voltage range, SMAF package, unidirectional and bidirectional versions available, operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diode with 400W peak pulse power, 5.0 to 440V voltage range, glass passivated die, unidirectional and bidirectional versions, SMAF package, and low leakage current.Surface mount transient voltage suppressor diode with 400W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and operating temperature from -55 to +150°C. | Original |
AF190 Price and Stock
Panduit Corp FXTYP7EL2SAF190OM3 12-FIBER INDOOR SMALL DIAMET |
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FXTYP7EL2SAF190 | Bulk | 1 |
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FXTYP7EL2SAF190 | Bulk | 14 Weeks | 1 |
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FXTYP7EL2SAF190 | Bulk | 1 |
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FXTYP7EL2SAF190 | 1 |
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Panduit Corp FZTYP7EL2SAF190OM4 12-FIBER INDOOR SMALL DIAMET |
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FZTYP7EL2SAF190 | Bulk | 1 |
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FZTYP7EL2SAF190 | Bulk | 14 Weeks | 1 |
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FZTYP7EL2SAF190 | Bulk | 1 |
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FZTYP7EL2SAF190 | 1 |
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Panduit Corp F9UYP5353AAF190OS2 24F TRUNK OFNP MPO F/MPO F 1 |
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F9UYP5353AAF190 | Bulk | 1 |
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F9UYP5353AAF190 | Bulk | 14 Weeks | 1 |
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Abracon Corporation AX5DAF1-900.2500COSC XO 900.25MHZ 3.3V LVDS |
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AX5DAF1-900.2500C |
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Abracon Corporation AX5MAF1-904.0000COSC XO 904MHZ 3.3V CML |
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AX5MAF1-904.0000C |
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AF190 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
A08 monolithic amplifier
Abstract: RAM-8 Mini-Circuits Monolithic Amplifier A08 monolithic RF AMPLIFIER RF AMPLIFIER marking A08 ram8
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Original |
AF190 2002/95/EC) JESD22-C101C A08 monolithic amplifier RAM-8 Mini-Circuits Monolithic Amplifier A08 monolithic RF AMPLIFIER RF AMPLIFIER marking A08 ram8 | |
marking A04
Abstract: A04 monolithic amplifier AF190 ram-4 RF AMPLIFIER marking A04 MMIC Amplifier A04
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Original |
AF190 2002/95/EC) marking A04 A04 monolithic amplifier AF190 ram-4 RF AMPLIFIER marking A04 MMIC Amplifier A04 | |
AF190
Abstract: R04350B
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OCR Scan |
M108436 M108585 TB-414+ AF190 R04350B AF190, TB-414-X+ 98PL254 98-PL-254 | |
AF190
Abstract: AF190-1 98-AF 04Notes
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Original |
AF190-1 98-AF M104242 AF190 AF190-1 04Notes | |
marking A06 amplifier
Abstract: 4A063
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Original |
AF190-1 2002/95/EC) marking A06 amplifier 4A063 | |
A08 monolithic amplifier
Abstract: ,A08 monolithic amplifier A08 marking RF AMPLIFIER marking A08
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Original |
AF190 2002/95/EC) JESD22-C101C A08 monolithic amplifier ,A08 monolithic amplifier A08 marking RF AMPLIFIER marking A08 | |
RF AMPLIFIER marking A01Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190 |
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AF190 2002/95/EC) RF AMPLIFIER marking A01 | |
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Contextual Info: Surface Mount Monolithic Amplifier DC-2 GHz Product Features • Wideband, DC to 2 GHz • Cascadable ceramic package • Low noise figure, 2.8 dB typ. • Excellent repeatability • Aqueous washable RAM-7+ CASE STYLE: AF190 PRICE: $4.95 ea. QTY. 30 Typical Applications |
Original |
AF190 2002/95/EC) | |
A04 monolithic amplifier
Abstract: ram4 monolithic amplifier A04 AF190 M108520 MMIC Amplifier A04
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Original |
AF190 2002/95/EC) A04 monolithic amplifier ram4 monolithic amplifier A04 M108520 MMIC Amplifier A04 | |
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Contextual Info: Surface Mount Monolithic Amplifier DC-2 GHz Product Features • Wideband, DC to 2 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-2+ CASE STYLE: AF190 |
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AF190 2002/95/EC) | |
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Contextual Info: Surface Mount Monolithic Amplifier DC-2 GHz Product Features • Wideband, DC to 2 GHz • Cascadable ceramic package • Low noise figure, 2.8 dB typ. • Excellent repeatability • Aqueous washable RAM-6+ CASE STYLE: AF190 PRICE: $4.95 ea. QTY. 30 Typical Applications |
Original |
AF190 2002/95/EC) | |
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Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-4+ CASE STYLE: AF190 |
Original |
AF190 2002/95/EC) | |
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Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190 |
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AF190 | |
marking A07
Abstract: A07 monolithic amplifier 414 monolithic amplifier AF190 A07 RF Amplifier RF AMPLIFIER marking A07
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AF190 2002/95/EC) marking A07 A07 monolithic amplifier 414 monolithic amplifier AF190 A07 RF Amplifier RF AMPLIFIER marking A07 | |
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marking A06 amplifier
Abstract: RF AMPLIFIER marking A06 A06 monolithic amplifier marking A06 101C AF190-1 RAM-6 marking A06 RF amplifier
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AF190-1 2002/95/EC) marking A06 amplifier RF AMPLIFIER marking A06 A06 monolithic amplifier marking A06 101C AF190-1 RAM-6 marking A06 RF amplifier | |
ram-4Contextual Info: Surface Mount RAM-4+ RAM-4 Monolithic Amplifier 50Ω DC to 1000 MHz Features • wideband, DC to 1000 MHz • cascadable ceramic package • low noise figure, 6.5 dB typ. • excellent repeatability • protected under US Patent 6,943,629 CASE STYLE: AF190 |
Original |
AF190 2002/95/EC) TB-414-4+ PL-254) ram-4 | |
marking A06 amplifier
Abstract: A06 monolithic amplifier ram6 5.1 amplifier PCB layout
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AF190-1 2002/95/EC) marking A06 amplifier A06 monolithic amplifier ram6 5.1 amplifier PCB layout | |
marking A06 amplifier
Abstract: 101C
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AF190-1 2002/95/EC) marking A06 amplifier 101C | |
AF190
Abstract: AF320 AH202 AN213 AT224 AF320 af190 marking AB204
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AB185 AB186 AB204 AF190 AF320 AG191 AH202 AN213 AR214 AT224 AF190 AF320 AH202 AN213 AT224 AF320 af190 marking AB204 | |
A08 monolithic amplifier
Abstract: RAM-8 Mini-Circuits A08 monolithic amplifier Monolithic Amplifier Wideband marking A08
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AF190-1 2002/95/EC) JESD22-C101C A08 monolithic amplifier RAM-8 Mini-Circuits A08 monolithic amplifier Monolithic Amplifier Wideband marking A08 | |
A03 monolithic amplifierContextual Info: Surface Mount Monolithic Amplifier DC-2 GHz Product Features • Wideband, DC to 2 GHz • Cascadable ceramic package • Low noise figure, 6.0 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-3+ CASE STYLE: AF190 |
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AF190 2002/95/EC) A03 monolithic amplifier | |
marking A06 amplifier
Abstract: M108520 RF AMPLIFIER marking A06
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AF190-1 2002/95/EC) marking A06 amplifier M108520 RF AMPLIFIER marking A06 | |
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Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190 |
Original |
AF190 2002/95/EC) | |
A08 monolithic amplifier
Abstract: A08 marking
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Original |
AF190-1 2002/95/EC) A08 monolithic amplifier A08 marking | |