AEC-Q101 TRANSISTOR Search Results

TFBS2711

Abstract: TFBS2711X01 windshield rain sensor "steering Angle Sensor" TEMD6200 solar sensor TEMT6200 TEMD6000FX01 TEMT6000FX01 TEMD5510FX01
Contextual Info: V i s h ay I n t e r t ec h n o l o g y, I n c . Automotive Grade Optoelectronics Optoelectronics - AEC-Q101 Qualified Parts AEC-Q101 Qualified Par ts Vishay Optoelectronics – Automotive Grade by Design This catalog lists our AEC-Q101 qualified optoelectronics components, including LEDs, infrared

Selector Guide

Abstract: TFBS2711X01
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Automotive Grade Optoelectronics Optoelectronics - AEC-Q101 Qualified Parts AEC-Q101 Qualified Par ts Vishay Optoelectronics – Automotive Grade by Design This catalog lists our AEC-Q101 qualified optoelectronics components, including LEDs, infrared

ZENER 148

Abstract: 1N414* zener zener diode 182 diode zener 182 zener 102 zener 183 ZENER 148 Datasheet Zener Diodes Schottky Rectifiers 1N4148WT-7-F
Contextual Info: AUTOMOTIVE GRADE DEVICES NEW PRODUCT AEC-Q101 SEMICONDUCTORS Features • · · · These devices have passed rigorous High Reliability Testing per AEC-Q101 Small Surface Mount Packages Available in Lead Free/RoHS Compliant Version Refer to Device Data Sheet for Electrical and Mechanical Parameters

Contextual Info: 2SA2029FHA / 2SA1774EB / 2SA1774 2SA1774FRA / 2SA1576UB // 2SA1576A 2SA1576AFRA / 2SA1037AKFRA 2SA2029 / 2SA1774EB / 2SA1576UB / 2SA1037AK Datasheet PNP -150mA -50V General Purpose Transistors AEC-Q101 Qualified Outline Parameter Value VCEO IC 50V 150mA

Contextual Info: EMZ1 / UMZ1N / IMZ1A EMZ1FHA / UMZ1NFHA / IMZ1AFRA Transistors General purpose transistor dual transistors AEC-Q101 Qualified EMZ1 / UMZ1N / IMZ1A / IMZ1AFRA EMZ1FHA / UMZ1NFHA zExternal dimensions (Unit : mm) zFeatures 1) Both a 2SA1037AKFRA 2SA1037AK chip and 2SC2412KFRA

Contextual Info: RTL035N03FRA RTL035N03 Transistors 2.5V Drive Nch MOSFET AEC-Q101 Qualified RTL035N03FRA RTL035N03 zDimensions Unit : mm zStructure Silicon N-channel MOSFET TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6).

Contextual Info: AEC-Q101 Qualified High-frequency Amplifier Transistor 25V, 50mA, 300MHz 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K / 2SC2413K 2SC5659FHA / 2SC4618FRA / 2SC4098FRA Dimensions (Unit : mm) 1.2 0.8 1.2 0.32 0.2 0.2 (2) (3) 0.8 2SC5659FHA 2SC5659 0.4 0.4 Features

Contextual Info: MJB44H11T4-A Automotive-grade low voltage NPN power transistor Datasheet - production data Features • Designed for automotive applications and AEC- Q101 qualified TAB • Low collector-emitter saturation voltage • Fast switching speed 3 Applications 1

Contextual Info: AEC-Q101 Qualified Medium power transistor 60V, 0.5A 2SA2088FRA Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

Contextual Info: RTF025N03 RTF025N03FRA Transistors 2.5V Drive Nch MOSFET AEC-Q101 Qualified RTF025N03 RTF025N03FRA zDimensions Unit : mm zStructure Silicon N-channel MOSFET 0.2Max. TUMT3 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3).

L2SC1623RLT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC1623QLT1G Series S-L2SC1623QLT1G

Contextual Info: 2SA1579FRA / 2SA1514AK 2SA1579 / 2SA1514K Datasheet PNP -50mA -120V High-Voltage Amplifier Transistors AEC-Q101 Qualified lOutline Parameter Value VCEO IC -120V -50mA UMT3 Collector SMT3 Collector Base Base Emitter Emitter 2SA1579FRA 2SA1579 SOT-323 SC-70

Contextual Info: RSL020P03FRA RSL020P03 Transistors 4V Drive Pch MOSFET AEC-Q101 Qualified RSL020P03FRA RSL020P03 zDimensions Unit : mm zStructure Silicon P-channel MOSFET TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) High speed switching. zApplications Switching Abbreviated symbol : SL

Contextual Info: 2SC4102 / 2SC3906K 2SC4102FRA / 2SC3906KFRA Datasheet NPN 50mA 120V High Voltage Amplifier transistors AEC-Q101 Qualified lOutline Parameter Value VCEO IC 120V 50mA UMT3 Collector SMT3 Collector Base Base Emitter Emitter 2SC4102FRA 2SC4102 SOT-323 SC-70

UMX2NFH

Contextual Info: / UMX2N / IMX2 EMX2FHA /EMX2 UMX2NFHA / IMX2FRA Transistors AEC-Q101 Qualified General purpose dual transistors EMX2FHA / UMX2NFHA / IMX2FRA EMX2 / UMX2N / IMX2 zExternal dimensions (Unit : mm) zFeatures 1) Two 2SC2412AK chips in a EMT or UMT or SMT package.

Contextual Info: AEC-Q101 Qualified General purpose transistor 50V, 0.15A 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 2SC2412KFRA / 2SC4081FRA / 2SC4617FRA/ /2SC5658FHA Dimensions (Unit : mm) 0.7 (3) Collector (2) Base 0.8 0.4 0.4 (1) 0.22 (3) 0.13 0~0.1 0.15Max. 0~0.1 0.7

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC807-40WT1G

2SCR514p

Contextual Info: 2SAR514PFRA 2SAR514P Datasheet PNP -0.7A -80V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC -80V -0.7A MPT3 Base Collector Emitter 2SAR514P 2SAR514PFRA SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2SCR514PFRA

Contextual Info: 2SAR513P 2SAR513PFRA Datasheet PNP -1.0A -50V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC -50V -1.0A MPT3 Base Collector Emitter 2SAR513P 2SAR513PFRA SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2SCR513PFRA

L2SC1623QLT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC1623QLT1G Series S-L2SC1623QLT1G

2907 TRANSISTOR PNP

Abstract: 2907 MMBT2222A SMBT2222A
Contextual Info: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2907A/MMBT2907A s2F

Contextual Info: RTR025N03FRA RTR025N03 Transistors 2.5V Drive Nch MOS FET AEC-Q101 Qualified RTR025N03FRA RTR025N03 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TSMT3 1.0MAX zFeatures 1) Low On-resistance. 2) Space saving−small surface mount package (TSMT3).

Contextual Info: RTF015P02FRA RTF015P02 Transistors AEC-Q101 Qualified DC-DC Converter −20V, −1.5A RTF015P02FRA RTF015P02 0.2 TUMT3 2.0±0.1 0.85MAX 0.77±0.05 0.3 +0.1 −0.05 (3) zApplications DC-DC converter 0 to 0.1 (1) 0.2 0.2MAX zExternal dimensions (Unit : mm)

SMBT2222A SOT23

Abstract: of ic 2907
Contextual Info: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2907A/MMBT2907A s2F