AEC-Q101 TO220AB Search Results
AEC-Q101 TO220AB Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| GRT155C81A475ME13J | Murata Manufacturing Co Ltd | AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment | |||
| GRT155D70J475ME13D | Murata Manufacturing Co Ltd | AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment | |||
| GRT155C81A475ME13D | Murata Manufacturing Co Ltd | AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment | |||
| GRT155D70J475ME13J | Murata Manufacturing Co Ltd | AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment | |||
| 1SS307E |
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Switching Diode, 80 V, 0.1 A, ESC, AEC-Q101 | Datasheet |
AEC-Q101 TO220AB Datasheets Context Search
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Contextual Info: STPS2545CT-Y Automotive power Schottky rectifier Datasheet − production data Features A1 • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low thermal resistance ■ Avalanche capability specified ■ AEC-Q101 qualified |
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STPS2545CT-Y AEC-Q101 O-220AB | |
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Contextual Info: STPS2545CT-Y Automotive power Schottky rectifier Datasheet − production data Features • A1 Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low thermal resistance ■ Avalanche capability specified ■ AEC-Q101 qualified |
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STPS2545CT-Y AEC-Q101 O-220AB | |
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Contextual Info: MBR6040CT 60.0Amp Schottky Barrier Rectifier TO-220AB Pb RoHS COMPLIANCE Features Low power loss, high efficiency High current capability, Low forward voltage drop. Plastic material used carries Underwriters Laboratory Classification 94V-0 Qualified as per AEC-Q101 |
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MBR6040CT O-220AB AEC-Q101 260/10S/ MIL-STD-202, | |
STPS2545CTYContextual Info: STPS2545CT-Y Automotive power Schottky rectifier Features • A1 Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low thermal resistance ■ Avalanche capability specified ■ AEC-Q101 qualified K A2 A2 A1 Description |
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STPS2545CT-Y AEC-Q101 O-220AB STPS2545CTY | |
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Contextual Info: VS-HFA30TA60CHN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization: |
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VS-HFA30TA60CHN3 AEC-Q101 O-220AB VS-HFA30TA60CHN3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
FGB3440G2Contextual Info: FGB3440G2_F085 / FGD3440G2_F085 FGP3440G2_F085 EcoSPARK 2 335mJ, 400V, N-Channel Ignition IGBT Features Applications o SCIS Energy = 335mJ at TJ = 25 C Automotive lgnition Coil Driver Circuits Logic Level Gate Drive Coil On Plug Applications Qualified to AEC Q101 |
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FGB3440G2 FGD3440G2 FGP3440G2 335mJ, 335mJ O-263AB O-220AB O-252AA ESCIS25 | |
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Contextual Info: New Product VS-HFA30TA60CHN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization: |
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VS-HFA30TA60CHN3 AEC-Q101 O-220AB O-220AB VS-HFA30TAtrademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: VS-HFA30TA60CHN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization: for definitions of |
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VS-HFA30TA60CHN3 AEC-Q101 O-220AB VS-HFA30TA60CHN3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SQP120N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.006 ID (A) • AEC-Q101 Qualifiedd |
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SQP120N06-06 AEC-Q101 O-220AB O-220 SQP120N06-06-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: SQP120N10-09 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0095 ID (A) • AEC-Q101 Qualifiedd |
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SQP120N10-09 AEC-Q101 O-220 SQP120N10-09-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: BUK951R6-30E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high |
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BUK951R6-30E | |
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Contextual Info: BUK954R8-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high |
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BUK954R8-60E | |
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Contextual Info: BUK752R7-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high |
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BUK752R7-60E | |
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Contextual Info: SQP120N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.006 ID (A) • AEC-Q101 Qualifiedd |
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SQP120N06-06 AEC-Q101 O-220AB O-220 SQP120N06-06-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: BUK951R9-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high |
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BUK951R9-40E | |
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Contextual Info: BUK953R5-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high |
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BUK953R5-60E | |
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Contextual Info: BUK954R4-80E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high |
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BUK954R4-80E | |
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Contextual Info: BUK753R8-80E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high |
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BUK753R8-80E | |
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Contextual Info: SQP60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.015 ID (A) • AEC-Q101 Qualifiedd |
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SQP60N06-15 AEC-Q101 O-220AB O-220 SQP60N06-15-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: SQP120N10-3m8 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0038 ID (A) • AEC-Q101 Qualifiedd |
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SQP120N10-3m8 AEC-Q101 O-220 SQP120N10-3m8-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: SQP60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.015 ID (A) • AEC-Q101 Qualifiedd |
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SQP60N06-15 AEC-Q101 O-220AB O-220 SQP60N06-15-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: SQP120N10-3m8 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0038 ID (A) • AEC-Q101 Qualifiedd |
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SQP120N10-3m8 AEC-Q101 O-220 SQP120N10-3m8-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
BUK953Contextual Info: BUK953R2-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high |
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BUK953R2-40E BUK953 | |
BUK753
Abstract: BUK753R5-60E
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BUK753R5-60E BUK753 BUK753R5-60E | |