ADVANCED POWER MOSFET Search Results
ADVANCED POWER MOSFET Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| GRT155C81A475ME13J | Murata Manufacturing Co Ltd | AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment | |||
| GRT155D70J475ME13D | Murata Manufacturing Co Ltd | AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment | |||
| GRT155C81A475ME13D | Murata Manufacturing Co Ltd | AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment | |||
| GRT155D70J475ME13J | Murata Manufacturing Co Ltd | AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment | |||
| MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN |
ADVANCED POWER MOSFET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: AP42T03GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Low Gate Charge Fast Switching Characteristic ID G 30V 22m 30A S Description The Advanced Advanced Power Power |
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AP42T03GP O-220 O-220 42T03GP | |
4002TContextual Info: AP4002T RoHS-compliant Product Advanced Power Electronics Corp. 100% Avalanche Test N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS ON Fast Switching Characteristics Simple Drive Requirement ID G 600V 5 400mA S Description Advanced Power MOSFETs utilized advanced processing techniques to |
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AP4002T 400mA 4002T 4002T | |
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Contextual Info: AP01L60AT RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Fast Switching Characteristics Simple Drive Requirement BVDSS 600V RDS ON 12 ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to |
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AP01L60AT 160mA 01L60AT | |
AP01L60TContextual Info: AP01L60T Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement BVDSS 600V RDS ON 12Ω ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to |
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AP01L60T 160mA AP01L60T | |
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Contextual Info: AP9435GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge BVDSS D Simple Drive Requirement Fast Switching G -30V RDS ON 50m ID - 20A S Description G Advanced Power MOSFETs utilized advanced processing techniques to |
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AP9435GH/J O-252 O-252/TO-251 O-251 100us 100ms | |
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Contextual Info: AP01L60T RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Fast Switching Characteristics Simple Drive Requirement BVDSS 600V RDS ON 12 ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to |
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AP01L60T 160mA | |
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Contextual Info: AP2625GY RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D2 D1 -30V RDS ON Low Gate Drive Surface Mount Package BVDSS ID G2 G1 185m - 2A S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques |
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AP2625GY OT-26 OT-26 12REF 37REF 90REF 20REF 95REF | |
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Contextual Info: AP3403H/J Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching BVDSS -30V RDS ON 200mΩ ID - 10A G S Description G D Advanced Power MOSFETs utilized advanced processing techniques to |
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AP3403H/J O-252 O-252/TO-251 O-251 100ms Fig11. | |
AP2304AN
Abstract: N-CHANNEL MOSFET 30V 2A SOT-23
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AP2304AN OT-23 OT-23 100ms AP2304AN N-CHANNEL MOSFET 30V 2A SOT-23 | |
AP01L60TContextual Info: AP01L60T RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement BVDSS 600V RDS ON 12Ω ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to |
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AP01L60T 160mA AP01L60T | |
AP9435GHContextual Info: AP9435GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching G BVDSS -30V RDS ON 50mΩ ID - 20A S Description G Advanced Power MOSFETs utilized advanced processing techniques to |
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AP9435GH/J O-252 O-252/TO-251 O-251 100us 100ms AP9435GH | |
AP2623YContextual Info: AP2623Y Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low On-resistance ▼ Surface Mount Package -30V RDS ON 170mΩ ID G2 G1 BVDSS - 2A S2 S1 Description D2 S1 Advanced Power MOSFETs utilized advanced processing techniques |
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AP2623Y OT-26 OT-26 180/W AP2623Y | |
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Contextual Info: AP2322GN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS Capable of 1.8V gate drive Simple Drive Requirement RDS ON D ID Surface mount package Description 90m 2.5A S SOT-23 20V D G Advanced Power MOSFETs utilized advanced processing techniques to |
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AP2322GN OT-23 OT-23 | |
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Contextual Info: AP2304AGN-HF Halogen-Free Product Advanced Power Electronics Corp. Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D RDS ON Small Package Outline ID Surface Mount Device 30V 117m 2.5A S RoHS Compliant SOT-23 G Description D Advanced Power MOSFETs utilized advanced processing techniques |
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AP2304AGN-HF OT-23 OT-23 | |
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AP01L60ATContextual Info: AP01L60AT RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement BVDSS 600V RDS ON 12Ω ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to |
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AP01L60AT 160mA AP01L60AT | |
AP01L60AT
Abstract: RoHS-compliant Product Advanced MOSFET BVDSS 01L60
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AP01L60AT 160mA 01L60AT AP01L60AT RoHS-compliant Product Advanced MOSFET BVDSS 01L60 | |
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Contextual Info: AP2318GEN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Capable of 2.5V Gate Drive D Small Outline Package BVDSS 30V RDS ON 1.5 ID Surface Mount Device 500mA S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to |
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AP2318GEN 500mA OT-23 OT-23 | |
AP2625YContextual Info: AP2625Y Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low On-resistance ▼ Surface Mount Package -30V RDS ON 135mΩ ID G2 G1 BVDSS - 2.3A S2 S1 Description D2 S1 Advanced Power MOSFETs utilized advanced processing techniques |
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AP2625Y OT-26 OT-26 100ms 180/W AP2625Y | |
4002T
Abstract: AP4002T AP4002 RoHS-compliant Product Advanced MOSFET BVDSS
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AP4002T 400mA 4002T 4002T AP4002T AP4002 RoHS-compliant Product Advanced MOSFET BVDSS | |
AP2306NContextual Info: AP2306N Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive ▼ Lower on-resistance D ▼ Surface mount package BVDSS 20V RDS ON 32mΩ ID 5.3A S SOT-23 Description G Advanced Power MOSFETs utilized advanced processing techniques to |
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AP2306N OT-23 OT-23 100ms AP2306N | |
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Contextual Info: AP2623GY RoHS-compliant Product Advanced Power Electronics Corp. DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D2 D1 -30V RDS ON Low On-resistance Surface Mount Package BVDSS ID G2 G1 170m - 2A S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques |
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AP2623GY OT-26 OT-26 | |
9435GH
Abstract: AP9435GH 9435G 9435GJ AP9435 9435 TO252 rthjc 250B1 AP9435G marking code E2 and gate
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AP9435GH/J O-252 O-252/TO-251 O-251 O-251 9435GJ 9435GH AP9435GH 9435G 9435GJ AP9435 9435 TO252 rthjc 250B1 AP9435G marking code E2 and gate | |
AP9963GPContextual Info: AP9963GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low Gate Charge ▼ Fast Switching Characteristic G BVDSS 40V RDS ON 4mΩ ID 160A S Description The Advanced Advanced |
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AP9963GP O-220 100us 100ms AP9963GP | |
AP9963GPContextual Info: AP9963GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low Gate Charge ▼ Fast Switching Characteristic G BVDSS 40V RDS ON 4mΩ ID 160A S Description The Advanced Advanced |
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AP9963GP O-220 100us 100ms AP9963GP | |