ADVANCED ELECTRONIC PACKAGING Search Results

AT93C66B

Abstract: Atmel EEPROM Selector Guide AT25256B AT24C256B application note design document AT24C16B at25df641 AT93C56B AT24C32C AT24C512 ATMEL serial EEPROM 256
Contextual Info: SERIAL MEMORY Atmel Serial Interface Memories 11 Years of Consecutive Leadership World’s Best-In-Class Serial EEPROMs and Serial Flash. Nurturing Your Advanced Electronic Needs Across the Board With 16 years of proven performance, Atmel Serial EEPROM and Serial Flash portfolios offer bestin-class solutions for your advanced electronic applications in automotive, consumer, communications,

Contextual Info: Electronic Designs In EDH8808HC-55/70 MILITARY 8K x 8 SRAM CMOS The EDH8808HC 8K x 8 is part of a new family of High Speed Static RAM devices developed by Electronic Designs Inc. The EDH8808HC uses the advanced EDI MEMORYPACK packaging concept which mounts several LCC

OV10

Contextual Info: Electronic Designs Inc. EDH84H16C-45/55 16K x 4 SRAM CMOS The EDH84H16C 16K x 4 is part of a new family of High Speed Static RAM devices developed by Electronic Designs Inc. The EDH84H16C uses the advanced EDI MEMORYPACK packaging concept which mounts several LCC

6AL7

Contextual Info: Electronic Designs Inc. EDH88H04C-45/55 4K x 8 SRAM CMOS The EDH88H04C 4K x 8 is part of a new family of High Speed Static RAM devices developed by Electronic Designs Inc. The EDH88H04C uses the advanced EDI MEMORYPACK packaging concept which mounts several LCC

Contextual Info: Electronic Designs Inc. EDH81H64C-45/55 64K x 1 SRAM CMOS IMMgrUTM The EDH81H64C 64K x 1 is part of a new family of High Speed Static RAM devices developed by Electronic Designs Inc. The EDH81H64C uses the advanced EDI MEMORYPACK packaging concept which mounts several LCC

16KX8

Contextual Info: Electronic Designs In EDH88H16N-45/55 16K x 8 SRAM NMOS The EDH88H16N 16K x 8 is part of a new family of High Speed Static RAM devices developed by Electronic Designs Inc. The EDH88H16N uses the advanced EDI MEMORYPACK packaging concept which mounts several LCC

Contextual Info: Electronic Designs li EDH88H04C-55/70/1C MILITARY 4K x 8 SRAM CMOS The EDH88H04C 4K x 8 is part of a new family of High Speed Static RAM devices developed by Electronic Designs Inc. The EDH88H04C uses the advanced EDI MEMORYPACK packaging concept which mounts several LCC

acs 08 5s

Contextual Info: B lfl Electronic Designs Inc. EDH88H08C-45/55 8K x 8 SRAM CMOS The EDH88H08C 8K x 8 is part of a new family of High Speed Static RAM devices developed by Electronic Designs Inc. The EDH88H08C uses the advanced EDI MEMORYPACK packaging concept which mounts several LCC

vqc 10 d

Abstract: IC-55 10dip
Contextual Info: ^ Electronic Designs Inc. EDH84H16C-55/85/10-DIP MILITARY 16K x 4 SRAM CMOS The EDH84H16C 16K x 4 is part of a new family of High Speed Static RAM devices developed by Electronic Designs Inc. The EDH84H16C uses the advanced EDI MEMORYPACK packaging concept which mounts several LCC

Contextual Info: Electronic Designs li EDH88H04C-55/70/1C MILITARY 4K x 8 SRAM CMOS The EDH88H04C 4K x 8 is part of a new family of High Speed Static RAM devices developed by Electronic Designs Inc. The EDH88H04C uses the advanced EDI MEMORYPACK packaging concept which mounts several LCC

SAE AS33671

Abstract: MS3367-4-9 MS3367-1-9 MS3367-5-9 MS3367-7-9 AS33671 ms3367-5-0 ms3367 MS3367-4-0 ms3367-2-0
Contextual Info: Welcome To Advanced Cable Ties, Inc. Founded in 1994, Advanced Cable Ties, Inc. ACT is a full-line manufacturer of cable ties and accessories used in industrial/fastener, electronic, electrical, HVAC, and a variety of other specialty applications. Superior Quality

4VRE

Abstract: 64K X 4 SRAM
Contextual Info: Electronic Designs Inc. EDH84H64C-55/70 • . . 64K x 4 SRAM CMOS The EDH84H64C 64K x 4 is part of a new fam ily of High Speed Static RAM devices developed by Electronic Designs Inc. The EDH84H64C uses the advanced EDI M EM ORYPACK packaging concept w hich m ounts several LCC

EDH8816C-12

Abstract: EDH8816C-15 EDH8816C-20
Contextual Info: Electronic Designs Inc. EDH8816C-12/15/20 16K x 8 SRAM CMOS Th e EDH8816C 16K x 8 uses the advanced Electronic Designs Inc. M EM ORY-PACK packaging concept which mounts several LC C memory devices on a single multilayer ceramic substrate. The ED H8816C is part of the EBM-pack

A118C

Abstract: 14D03
Contextual Info: Electronic Designs I ED H84H08C-55/70/11 MILITAR 8K X 4 SRAM CMOS The EDH84H08C 8K x 4 is part of a new family of High Speed Static RAM devices developed by Electronic Designs Inc. The EDH84H08C uses the advanced EDI M EM O R YPACK packaging concept which mounts several LC C

Contextual Info: ¿7 ELECTRO N IC ADVANCED 02547^3 D ÌJ 0QQQQQ5 Q T - 4 6 - 2 3 -0 8 ADVANCED ELECTRONIC PACKAGING C Y 7 C 168 C Y T C 169 CYPRESS = = = s = SEMICONDUCTOR 4 0 9 6 X 4 S ta tic R / W M axim um Ratings Above «kick tie utefcj life m y be tmpeirad SM cxfeT aapentw t

EDH8816C-12

Abstract: EDH8816C-15 EDH8816C-20
Contextual Info: Electronic Designs Ir EDH8816C-12/ 15/20 MILITARY 16K x 8 SRAM CMOS The EDH8816C <16K x 8 uses the advanced Electronic Designs Inc. M EM O R Y-PAC K packaging concept w hich m o un ts several LC C m em ory devices on a single m ultilayer ceram ic substrate. The EDH8816C is part o f the EBM -pack

WF8M32-XG4DX5

Abstract: WF2M32-XHX5
Contextual Info: White Electronic Designs WF8M32-XG4DX5 ADVANCED* 8Mx32 5V FLASH MODULE FEATURES Packaging: Data# Polling and Toggle Bit feature for detection of program or erase cycle completion. • 68 Lead, 40 mm 1.560" square hermetic CQFP, 5.2 mm (0.205") high (Package 503)

Contextual Info: Electronic Designs Ir EDH8816C-12/15/20 MILITARY 16K x 8 SRAM CMOS r-7 The EDH8816C <16K x 8 uses the advanced Electronic D esigns Inc. M E M O R Y-PAC K packaging concept w hich m o un ts several LC C m em ory devices on a single m ultilayer ceram ic substrate. The EDH8816C is part o f the EBM -pack

WS128K32-XG2TXE

Contextual Info: White Electronic Designs WS128K32-XG2TXE ADVANCED* 128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLLERANT FEATURES Access Times of 35, 45, 55ns TTL Compatible Inputs and Outputs Packaging • 68 lead, 22.4mm CQFP G2T , 4.57mm (0.180"), (Package 509) Built in Decoupling Caps and Multiple Ground Pins

Contextual Info: White Electronic Designs W78M64V-XSBX ADVANCED 8Mx64 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing

Contextual Info: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing

WS512K32BV-XXXE

Abstract: WS512K32BV-XG2XE WS512K32NBV-XH2XE
Contextual Info: White Electronic Designs WS512K32BV-XXXE *ADVANCED 512Kx32 3.3V SRAM MODULE FEATURES • Access Times of 15*, 17, 20ns ■ 3.3V Power Supply ■ Low Voltage Operation ■ BiCMOS ■ Packaging ■ TTL Compatible Inputs and Outputs • 66-pin, PGA Type, 1.385 inch square Hermetic

WS512K16-XXX

Contextual Info: White Electronic Designs WS512K16-XXX ADVANCED* 512Kx16 SRAM MODULE FEATURES Access Times 17, 20, 25, 35ns Data I/O Compatible with 3.3V devices MIL-STD-883 Compliant Devices Available 2V Minimum Data Retention for battery back up operation Packaging Commercial, Industrial and Military Temperature

Contextual Info: White Electronic Designs WS1M8V-XCX ADVANCED* 2x512Kx8 DUALITHIC SRAM FEATURES • Access Times 17, 20, 25, 35, 45, 55ns ■ Evolutionary, Corner Power/Ground Pinout ■ PIN CONFIGURATION FOR WS1M8V-XCX 32 DIP TOP VIEW Packaging: • 32 pin, Hermetic Ceramic DIP Package 300