ADSH 13 Search Results

WED2DL36513V25BC

Abstract: WED2DL36513V35BC WED2DL36513V38BC WED2DL36513V40BC WED2DL36514V25BC WED2DL36514V35BC WED2DL36514V38BC
Contextual Info: WED2DL36513V WED2DL36513AV 512Kx36 Synchronous Pipeline Burst SRAM PRELIMINARY* FEATURES DESCRIPTION • Fast clock speed: 200, 166, 150 & 133MHz The WEDC SyncBurst - SRAM family employs high-speed, lowpower CMOS designs that are fabricated using an advanced

Contextual Info: SSRAM AS5SS256K36 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM FEATURES z z z z z z z z z z z OPTIONS z z MARKING -8.5* -10 DQ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 80 79 78 77 76

Contextual Info: SSRAM AS5SS256K36 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM FEATURES z z z z z z z z z z z OPTIONS z z MARKING -8.5* -10 DQ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 80 79 78 77 76

80486 microprocessor pin out diagram

Abstract: ZL112 80486 microprocessor block diagram and pin diagram CY7C1031 CY7C1032 80486 microprocessor circuit diagram block diagram of processor 80486 wd153 intel 80486 pin diagram i486 sx
Contextual Info: CY7C1031 CY7C1032 CYPRESS 64K x 18 Synchronous Cache RAM Functional Description Features • Supports 66-MHz Pentium microprocessor cache sys­ tems with zero wait states • 64K by 18 common I/O • Fast clock-to-output times — 8.5 ns • Two-bit wraparound counter supporting Pentium mi­

Contextual Info: SB61S1024B Silicon-Based Technology Very High Speed and Low Power Memory 32Kx 32 BURST-PIPELINED CMOS SYNCHRONOUS SRAM PRELIMINARY Description: The SB61S1024B series products are 32,768-words by 32-bits burst-pipelined CMOS synchronous SRAMs fabricated with advanced 8" wafer submicron CMOS technology. Using advanced

cd 555

Abstract: WED2DL36513V25BC WED2DL36513V35BC WED2DL36513V38BC WED2DL36513V38BI WED2DL36513V40BC WED2DL36513V40BI
Contextual Info: WED2DL36513V White Electronic Designs 512Kx36 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION • Fast clock speed: 200, 166, 150 & 133MHz The WEDC SyncBurst - SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb

11 ak 30 a4

Abstract: adsh 13 SB61S1024B-4 SB61S1024B-5
Contextual Info: SB61S1024B Silicon-Based Technology Very High Speed and Low Power Memory 32Kx 32 BURST-PIPELINED CMOS SYNCHRONOUS SRAM PRELIMINARY Description: The SB61S1024B series products are 32,768-words by 32-bits burst-pipelined CMOS synchronous SRAMs fabricated with advanced 8" wafer submicron CMOS technology. Using advanced

Contextual Info: CY7C1331 CY7C1332 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR Features • Direct interface with the processor and external cache controller • Supports 50-M Hz Pentium processor cache systems with zero wait states • Asynchronous output enable T h e CY7C1331 is designed fo r Intel Pen­

MT58LC32K32C5

Abstract: z3-z1 D01400 LG ctv circuit diagram
Contextual Info: PRELIMINARY SYNCHRONOUS SRAM 32K x 32/36 SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • Fast access times: 4.5, 5, 6, 7, 8 and 9ns Fast O E# access times: 4.5,5 and 6ns Single +3.3V +10%/-5% p ow er supply

Contextual Info: PRELIMINARY MT58LC32K32/36D8 32K X 32/36 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. SYNCHRONOUS SRAM 32Kx 32/36 SRAM +3.3V SUPPLY, PIPELINED, SINGLE-CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • Fast access times: 4.5,5, 6,7, 8 and 9ns

Contextual Info: PRELIMINARY MT58LC128K16C6 128K X 16 SYNCBURST SRAM l^ ic n o N 128K X 16 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST COUNTER FEATURES • • • • • • • • OPTIONS MARKING • Timing 12ns clock cycle 83 MHz 13ns clock cycle (75 MHz)

Contextual Info: PRELIMINARY 64K x 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES PIN ASSIGNMENT Top View • • • • • • • • Fast access tim es: 4.5, 5, 6, 7, 8 and 9ns Fast O E # access tim e: 4.5, 5 and 6ns

ftr 02

Abstract: F.TR.02 19 IDT BH package marking marking a7r
Contextual Info: AL5DS9xx9V Data Sheets 3.3V Synchronous Dual-Port SRAM AL5DS9349V/59V/69V/79V/89V 4K/8K/16K/32K/64K x 18 AL5DS9269V/79V/89V 16K/32K/64K x 16 AL5DS9149V/59V/69V/79V/89V/99V 4K/8K/16K/32K/64K/128K x 9 AL5DS9069V/79V/89V/99V 16K/32K/64K/128K x 8 Preliminary AL5DS9xx9V

CY7C178

Abstract: CY7C179 AL4A
Contextual Info: PRELIMINARY '# CYPRESS 32Kx 18 Synchronous Cache RAM Features • Direct interface with the processor and external cache controller • Supports 66-MHz Pentium micro­ processor cache systems with zero wait states • Asynchronous output enable • I/Os capable o f 3.3V operation

Contextual Info: ADVANCE 128K • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP Fast access times: 4 .5 ,5 ,6 ,7 ,8 and 9ns Fast OE# access time: 4.5,5 and 6ns Single +3.3V +10%/-5% power supply SNOOZE MODE for reduced power standby Common data inputs and data outputs

Contextual Info: tm TE CH Preliminary T35L3232B SYNCHRONOUS BURST SRAM 32K x 32 SRAM FEATURES GENERAL DESCRIPTION ¡E FT pin for user configurable pipeline or flow-through operation. ¡E Fast Access times: - Pipeline – 3.8 / 4 / 4.5 ns - Flow-through – 9 / 10 / 11ns ¡ESingle 3.3V +0.3V/-0.165V power supply

T35L6432B

Contextual Info: tm TE CH Preliminary T35L6432B SYNCHRONOUS BURST SRAM 64K x 32 SRAM Pipeline and Flow-Through Burst Mode T35L6432B-4T FEATURES ¡E FT pin for user configurable pipeline or flowthrough operation. ¡E Fast Access times: - Pipeline – 3.8 / 4 / 4.5 / 5 ns - Flow-through – 9 / 10 / 11 / 12 ns

Contextual Info: ADVANCE SYNCHRONOUS SRAM 64K x 32/36 SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4.5, 5, 5.5, 6 and 7ns

AMBE 2

Abstract: NET-2000 AMBE-1000 AMBE-2000 ambe2 4P4C handset NET2000 audio sender wireless AMBE-2020 VOCODERS voip
Contextual Info: Digital Voice Systems, Inc. The Speech Compression Specialists Net-2000 Voice Codec Unit User’s Manual Version 1.0 March 2004 Net-2000 Voice Codec Unit User’s Manual Version 1.0, March 2004 Copyright, 2004 Digital Voice Systems, Inc 234 Littleton Road

Contextual Info: ADVANCE MT58LC32K32/36E1 32K x 32/36 SYNCBURST SRAM |V | = R O N 32K x 32/36 SRAM O D A A il O t lM IV I +3-3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES PIN ASSIGNMENT (Top View Fast access times: 8.5,9, 10 and 11ns Fast OE# access time: 5ns

A63G7332

Contextual Info: A63G7332 Series PRELIMINARY November 1997, Version 1.0 128K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output Features Fast access times: 4.5/5/5.5 ns Single +3.3V+10% or +3.3V-5% power supply Separate +2.5V+0.4V/-0.12V isloated ouptut buffer

Contextual Info: ADVANCE M T58LC128K16/18D8 128K X 16/18 SYNCBURST SRAM |U |IC = R O N 128Kx 16/18 SRAM +3.3V SUPPLY, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP Fast access tim es: 4.5, 5, 6, 7, 8 and 9ns

Contextual Info: ADVANCE M T58LC256K16/18F1 256K X 16/18 SYNCBURST SRAM l ^ i c n o N SYNCHRONOUS SRAM 256K x 16/18 SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST COUNTER FEATURES • • • • • • • • • • • • • • • • • OPTIONS 100-Pin TQFP

az18

Contextual Info: ADVANCE 256K SYNCHRONOUS SRAM MT58LC256K16/18B3 16/18 SYNCBURST SRAM X 2 5 6 K X 1 6 /1 8 S R A M +3.3V SUPPLY, FLOW-THROUGH AND BURST COUNTER FEATURES • • • • • • • • • • • • • • • • Fast access times: 8.5, 9, 10 and 11ns Fast OE# access time: 5ns