ADQ 41 Search Results

Contextual Info: DQ ADQ 30A POWER LATCHING RELAY 38.0 1.496 DQ RELAYS (ADQ) FEATURES 29.0 1.142 1. 30A capacity in small size 2. Latching type 3. High insulation 4,000V AC (between contacts and coil) Surge 10,000V (between contacts and coil) 4. Sealed construction 17.3 .681

90.26

Contextual Info: Surface Mount ADQ-180+ ADQ-180 Power Splitter/Combiner 2 Way-90° 50Ω 120 to 180 MHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature -55°C to 100°C Power Input as a splitter 0.5W max. Pin Connections SUMPORT 1 PORT 1 (+90°)

Contextual Info: Surface Mount ADQ-90+ ADQ-90 Power Splitter/Combiner 2 Way-90° 50Ω 55 to 90 MHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature -55°C to 100°C Power Input as a splitter 0.5W max. Pin Connections SUMPORT 1 PORT 1 (+90°)

Contextual Info: Mini-Circuits - Specification for Power Splitter - ADQ-180 Power Splitter Notes: • For Surface Mount Environmental Specifications, please click here. Re-flow soldering information is available in "Surface Mount" article. • Power Input as splitter 0.5W max.

tv splitter

Contextual Info: Surface Mount Power Splitter/Combiner 2 Way-90° 50Ω 55 to 90 MHz Maximum Ratings Operating Temperature Storage Temperature ADQ-180 Features -40°C to 85°C -55°C to 100°C Power Input as a splitter 0.5W max. • excellent amplitude unbalance, 0.6 dB typ.

ADQ-180

Contextual Info: 2 Way-90° Power Splitter/Combiner ADQ-180 Typical Performance Data TEST CONDITIONS: INPUT POWER = 0dBm @Temperature = +25°C FREQ. S-1 dB S-2 AVG. 6.36 5.89 5.49 5.13 4.81 4.53 4.29 4.07 3.87 3.70 3.55 3.42 3.30 3.20 3.11 3.03 2.97 2.92 2.87 2.84 2.82 2.81

TB-83

Contextual Info: Surface Mount Power Splitter/Combiner 2 Way-90° 50Ω 55 to 90 MHz Maximum Ratings Operating Temperature Storage Temperature ADQ-90 Features -40°C to 85°C -55°C to 100°C Power Input as a splitter 0.5W max. Pin Connections PORT nf SUM PORT 1 PORT 1 8

ADQ-180

Contextual Info: 2 Way-90° Power Splitter/Combiner ADQ-180+ Typical Performance Data TEST CONDITIONS: INPUT POWER = 0dBm @Temperature = +25°C FREQ. S-1 dB S-2 AVG. 6.36 5.89 5.49 5.13 4.81 4.53 4.29 4.07 3.87 3.70 3.55 3.42 3.30 3.20 3.11 3.03 2.97 2.92 2.87 2.84 2.82

M7947

Abstract: 9402A ED940
Contextual Info: NE W! Surface Mount Power Splitter/Combiner 2 Way-90° ADQ-180 120 to 180 MHz Features Maximum Ratings Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C Power Input as a splitter 0.5W max. • excellent amplitude unbalance, 0.6 dB typ.

Contextual Info: NE W! Surface-Mount Power Splitter/Combiner 2 Way-90°, 50Ω, ADQ-90 55 to 90 MHz Maximum Ratings Features Operating Temperature -20°C to 85°C Storage Temperature -55°C to 100°C Power Input as a splitter 0.5W max. • • • • Pin Configuration good isolation, 26 dB typ.

PQFP-128 footprint

Contextual Info: SIEMENS Memories for Graphics Systems Multibank DRAM MDRAM HYB39M93200 HYB39M83200 Version 0.9 Preliminary Information 02.97 HYB39M93200 HYB39M83200 Revision History: Current Version: 02.97 Previous Version: Page in previous Version Page (in current Version)

IS66WVD2M16ALL

Abstract: CellularRAM 66WVD2M16ALL
Contextual Info: IS66WVD2M16ALL 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst

IS66WVD4M16ALL

Abstract: CellularRAM 66WVD4M16ALL
Contextual Info: IS66WVD4M16ALL 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst

Contextual Info: IS66WVD2M16ALL Preliminary Information 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a

Contextual Info: IS66WVD4M16ALL Preliminary Information 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a

IS66WVD1M16ALL

Abstract: CellularRAM 66WVD1M16ALL IS66WVD1M16ALL-7010BLI
Contextual Info: IS66WVD1M16ALL Advanced Information 16Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device uses a

IS66WVD2M16DALL

Abstract: CellularRAM 66WVD2M16DALL
Contextual Info: IS66WVD2M16DALL 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst

PQFP128

Abstract: HYB39M83200 HYB39M83200L HYB39M83200Q HYB39M93200 HYB39M93200L HYB39M93200Q PLCC68 PQFP-128 TQFP-100
Contextual Info: 288k x 32 / 256k x 32 M ULTIBANK DRAM M DRAM HYB39M93200 HYB39M83200 Preliminary Information * Ultra-High Performance 666 M B yte/sec single device transfer rate 36 ns RAS access 13.8 ns CAS access 6 ns burst cycle * Multibank Architecture RAS and precharge may overlap CAS READ or W R ITE to different banks effectively hiding

Contextual Info: IS66WVD2M16ALL Advanced Information 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a

W958D6DBC

Contextual Info: W958D6DB 256Mb Async./Burst/Sync./A/D MUX 1. GENERAL DESCRIPTION Winbond x16 ADMUX products are high-speed, CMOS pseudo-static random access memory developed for lowpower, portable applications. The device has a DRAM core organized. These devices are a variation of the industrystandard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality

Contextual Info: W957D6HB 128Mb Async./Burst/Sync./A/D MUX 1. GENERAL DESCRIPTION Winbond x16 ADMUX products are high-speed, CMOS pseudo-static random access memory developed for lowpower, portable applications. The device has a DRAM core organized. These devices are a variation of the industrystandard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality

ADQ7

Abstract: 43747
Contextual Info: GŒ-L&- 002612 HARRIS _ / L / iy ii SEMICONDUCTOR P R O D U C T S DIVISION A D IV I S I O N O F H A R R I S C O R P O R A T I O N T 3<1dQ H M -6511 HNZ. 6 4 x 12 C M O S R A M N O V EM BE R 1978 Features Pinout T O P V IE W L O W S T A N D B Y P O W E R .

JSPQW-100A

Abstract: PSCQ-2-3 PQW-2-270 PQW-2-90 PSCQ-2-13 PSCQ-2-14 PSCQ-2-26 PSCQ-2-32 PSCQ-2-50 MCL PSCQ-2-550
Contextual Info: POWER SPLITTERS/COMBINERS 2 WAY-90° 50Ω Plug-In 0.42 MHz to 1875 MHz PSCQ-2 / PQW-2 fL-f U Typ. Min. Typ. Max. Max. Max. Note B C O N N E C T I O N 30-90 90-270 27 20 20 17 0.3 0.4 0.6 0.7 3 4 1.0 1.4 A01 A01 gy gy 29.95 31.95 PSCQ-2-0.455 PSCQ-2-1.25 PSCQ-2-3.4

Contextual Info: POWER SPLITTERS/COMBINERS 2 WAY-90° 50Ω Plug-In 0.42 MHz to 1875 MHz PSCQ-2 / PQW-2 fL-fU Typ. Min. Typ. Max. Max. Max. Note B C O N N E C T I O N 30-90 90-270 27 20 20 17 0.3 0.4 0.6 0.7 3 4 1.0 1.4 A01 A01 gy gy 29.95 31.95 PSCQ-2-0.455 PSCQ-2-1.25 PSCQ-2-3.4