AD103 M Search Results

Contextual Info: INCHES MILLIMETERS CUSTOMER DRAWINGS AVAILABLE UPON REQUEST Between Series Adapters F to RCA F Jack to RCA Plug Adapter CP-AD103 Cambridge Products, P.O. Box 1732, Waseca, MN 56093-0832 • 1-800-243-8814 • Fax: 507-833-6287 • www.cambridgeproducts.com

AD107

Abstract: LTRW 300v vdr AD100 AD101 AD103 M AD102 AD103 AD110 AD111
Contextual Info: SCRs AD100-AD104 1.6 Amp, Planar AD114-AD118 AD107-AD111 FEA TU R ES • M axim um Gate Trigger C u rren t: 2, 20 or 200/iA • T ig h t G ate Trigger Voltage Range: .44 to ,6V • Voltage R ating s: to 400V • S p e cifie d fo r d v/d t and S w itch in g Tim e

Contextual Info: SCRs AD100-AD104 AD107-AD111 AD114-AD118 1.6 Amp, Planar FEATURES • Maximum Gate Trigger Current: 2, 20 or 2CKVA • T ig h t Gate Trigger Voltage Range: .44 to .6V • Voltage Ratings: to 400V • Specified fo r d v /d t and S w itchin g Time DESCRIPTION

AD116

Abstract: AD108 AD100 AD103 AD109 AD111 AD101 AD102 AD104 AD107
Contextual Info: AD100-AD104 AD107-AD111 AD114-AD118 SCRs 1.6Amp, Planar FEATU RES DESCR IPTIO N • • • • This data sheet describes Unitrode’s A D'Series 1.6A SCRs designed for mediumcurrent control and sensing applications. Units are available in a complete range

2328a

Abstract: c 2328a
Contextual Info: Silicon Controlled Rectifiers P art N um ber J AN TXV2N 2324S 2N2325 2N2325A ID202 2N2326 2N2326A AD102 AD109 AD116 ID203 JA N 2N2326 JA N 2N 2326A JAN 2N2326A S JA N 2N2326S JA N TX2N 2326 JAN TX2N 2326A JAN TX2N 2326A S JAN TX2N 2326S JA N TXV2N 2326 JA N TXV2N 2326A

AD166

Abstract: at08a LT5079 2N463 LT5054 2N1435 s5 100 b101 t027 2N66 b10474
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

GT123

Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

AD166

Abstract: 434m 2SB424 KJ2000 KL8503 LT5054 LT5087 2N353 LT5080 TI368
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK