ACRIAN
Abstract: C1-12 C1-12-2 C1-12-3 acrian 1 C1123 acrian inc C112-2 acrian rf power
Contextual Info: 0182998 ACRIAN 97D INC [ACRIAN INC T7 01318 DE D 7 "-7 3 -0 5 ' D i ñ a b a □DD131Û 5 |~¡ • IS iS IK E i w iJ S R £ S * ■ » mm M l ¡¿S I H P S P . H a l M U W m m m M m ms& I GENERAL C1-12 D E S C R IP TIO N 1 WATT - 12.5 VOLT 450-512 MHz The C1-12 is specifically designed for UHF
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C1-12
DQD132G"
C1-12-3
470pf
005jif
L4-1T3/16"
ACRIAN
C1-12-2
C1-12-3
acrian 1
C1123
acrian inc
C112-2
acrian rf power
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This article
Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
Contextual Info: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left
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namely988.
AR346.
AN1107.
This article
vmil120ft
acrian RF POWER TRANSISTOR
VMIL20FT
F2012 mosfet
acrian RF MOSFET
AR346
acrian RF MOSFET vmil40ft
VMIL40FT
n-channel enhancement mode vmos power fet
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acrian RF POWER TRANSISTOR
Abstract: acrian RF POWER TRANSISTOR 300 w acrian inc acrian H100-50
Contextual Info: DE| ACRIAN INC 2301 DESCRIPTION 1.5 WATTS - 20 VOLTS 2300 MH2 The 2301 is a common base transistor capable of providing 1.5 watts of C W RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications applications. It
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-65to
acrian RF POWER TRANSISTOR
acrian RF POWER TRANSISTOR 300 w
acrian inc
acrian H100-50
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acrian RF POWER TRANSISTOR
Abstract: acrian RF POWER TRANSISTOR 300 w TRANSISTOR S250 S250-50 acrian ic S250-50-2 S250-50-3 S25-50 le200 acrian inc
Contextual Info: 0182998 ACRIAN INC 97D 01153 D -33-15 DE •dlfla'na 00 01153 7 GENERAL DESCRIPTION The S250-50 is a 50V 250 W PEP NPN silicon RF power transistor designed for 1.5 to 30 MHz linear applications. Gold metallization and difussed resistors assure optimum reliability and ruggedness.
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S250-50
S250-50-3
Icq-100
acrian RF POWER TRANSISTOR
acrian RF POWER TRANSISTOR 300 w
TRANSISTOR S250
acrian ic
S250-50-2
S250-50-3
S25-50
le200
acrian inc
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hf power amplifiers 2-30 mhz
Abstract: S15-12 Scans-00115673 S15-12-2 UJ35
Contextual Info: 0182998 ACRIAN IN C ~T7 »E^DlñETIñ D DG011SD 3 f - 3 3 - // S15-12 GENERAL DESCRIPTION 15 WATTS - 12.5 VOLTS 1.5 - 30 MHZ The S15-12 is recommended for use in HF Linear amplifiers. It is linearity and ruggedness make it ideal for use in driver stages. HF COMMUNICATIONS
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G102110
S15-12
S15-12
25cfc
-65to
f-30MHz,
Vcc-12
100mA
uJ-35
hf power amplifiers 2-30 mhz
Scans-00115673
S15-12-2
UJ35
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acrian RF POWER TRANSISTOR
Abstract: 960-1215 MHz transistor 20W ejc2 x band pulsed amplifier radar ELECTROLYTIC CAPACITOR 5u acrian RF resistor acrian inc acrian
Contextual Info: 0182998 ACRIAN INC GENERAL T? DE jOlflSTTfl □□□lOflfl 0 0912*45 DESCRIPTION 45 WATTS - 50 VOLTS 960-1215 MHz The 0912-45 is an internally matched, common base transistor providing 45 watts of pulsed RF output power across the 960-1215 MHz band. This transistor is
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-65to
T-33-15
50VDC
10OpF
acrian RF POWER TRANSISTOR
960-1215 MHz transistor 20W
ejc2
x band pulsed amplifier radar
ELECTROLYTIC CAPACITOR 5u
acrian RF resistor
acrian inc
acrian
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DME10
Abstract: DME150 acrian inc
Contextual Info: 0182998 G ENER A L ACRIAN INC 97D 01078 DME 150 D ES C R IP TIO N All devices utilize the most advanced design and process technologies. These features provide the most consistent and reliable chip and package combination designed, built and tested specifically for use in airborne DME.
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l-oj-15
Pw-10
VCC-50V
200fosec
DME10
DME150
acrian inc
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N1137
Abstract: S100-12 S100-12-2 S100-12-3 HF power amplifier acrian inc
Contextual Info: 0182998 ACRIAN INC S 1 00-12 GENERAL DESCRIPTION 100 WATTS - 12.5 VOLTS 1.5-30 MHz The S100-12 is designed for common emitter HF, SSB applications from a 12 volt supply. It may be operated Class A, AB or C. The device has emitter ballasting for ruggedness and reliability.
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S100-12
S100-12
n1137
T-33-15
S100-12-3
lo10A
N1137
S100-12-2
S100-12-3
HF power amplifier
acrian inc
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acrian RF POWER TRANSISTOR
Abstract: BAL0105-50 0105-50-2 IMPROVED DROP-IN D105-S0n Scans-00115696
Contextual Info: 01 82 99 8 ACRIAN INC DE g o l f i s t a T7 DOGiaifl T I"D r ’- j j r - f j AN 0105-50 GENERAL DESCRIPTION The 0105-50 is an internally matched balanced transistor specifically designed for broadband Class A, AB or C high power applications from 100-500 MHz.
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BAL0105-50.
D105-S0n/
00D15E0
T-33-13
acrian RF POWER TRANSISTOR
BAL0105-50
0105-50-2
IMPROVED DROP-IN
D105-S0n
Scans-00115696
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acrian
Abstract: 25CC TPR175 TPR175-2 TPR175-3 acrian inc
Contextual Info: 0182998 ACRIAN 97D 0 1DRR INC DE o i ñ S T T f l TPR175 G EN ER A L D E S C R IP TIO N The TPR175 utilizes the most advanced design and process technologies. These features provide the most consistent and reliable chip and package combination designed, built and tested specifically
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T-33-15
TPR175
Tf-30Â
TPR175-3
175WI
acrian
25CC
TPR175-2
TPR175-3
acrian inc
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BAL0105-100
Abstract: J3315 Scans-00115697
Contextual Info: 0182998 ACRIAN GENERAL INC ”t? DE [ □ l A S ' H Ò DD01BE1 1 |~5 A\m& 0105-100 DESCRIPTION 100 WATTS - 28 VOLTS 100-500 MHz The 0105-100 is an internally matched, balanced transistor designed for broadband applications. It may be operated Class A, AB or C and is an improved
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BAL0105-100.
J05-100â
560mW
BAL0105-100
J3315
Scans-00115697
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B45-12
Abstract: B30-12 B45-12-3 B15-12 B45-12-2 Scans-00115716
Contextual Info: 0182998 ACRIAN INC T? DE KS1 *B B 'M W5 mm SS>^»K CPmZt IP 1! 2 55 MRÜ mm K mm ¡15 5 SI S H Pi Sr. nal MMR R WWtawn B45-12 GENERAL DESCRIPTION 45 WATTS - 12.5 VOLTS 150-175 MHz The B45-12 is designed for VHF land mobile applications delivering 45 watts of RF power
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B45-12
B45-12
175MH
12ENCY
B30-12
B45-12-3
B15-12
B45-12-2
Scans-00115716
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acrian RF POWER TRANSISTOR
Abstract: JTDA50 JTDA50-2 Scans-00115670
Contextual Info: 0182998 ACRIAN INC GENERAL T? DE j G i a a n f l □□□1012 2 T D ' T - J j - LS JTDA50 DESCRIPTION The JTDA50 is a common basis transistor providing 50 watts of pulsed RF output power across the 960-1215 MHz Band. This hermetically sealed transistor is specifically designed for
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JTDA50
UTDA50
JTDA50-2
acrian RF POWER TRANSISTOR
JTDA50-2
Scans-00115670
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UMIL60
Abstract: C2M60-28 UMIL25 UMIL60-2 k 3683 transistor acrian inc
Contextual Info: 0182998 ACRIAN INC ~t? d T J G ia s^ a cmoiaoM D jj-/y UMIL60 GENERAL DESCRIPTION The UMIL60 is a double input matched broadband transistor specifically intended for use in the 225-400 MHz frequency band. It may be operated Class A, AB, or C. Gold metallization
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0D015G4
UMIL60
C2M60-28.
000120k
T-33-13
UMIL60
C2M60-28
UMIL25
UMIL60-2
k 3683 transistor
acrian inc
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acrian RF POWER TRANSISTOR
Abstract: z3 transistor TRIMMER capacitor 5-60 pF Scans-00115662
Contextual Info: 0182998 ACRIAN INC T? DE lOlñSTTfl DOOlOflS 5 | ~ D m w m G EN ER A L 0912-25 D E SC R IP TIO N 25 WATTS - 50 VOLTS 960-1215 MHz The 0912-25 is an internally matched, common base transistor providing 25 watts of pulsed RF output power across the 960-1215 MHz bandwidth. This hermetically
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-65to
50VDC
acrian RF POWER TRANSISTOR
z3 transistor
TRIMMER capacitor 5-60 pF
Scans-00115662
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acrian RF POWER TRANSISTOR
Abstract: transistor A 584 acrian inc ACRIAN acrian 2001 584 TRANSISTOR acrian ic acrian 1 20w50 acrian rf power
Contextual Info: O 1 8 2 9 9 8 . ACFjtlAN INC J97D ACRIAN INC ~T7 de 01406 r in ia e ooomoh □ ilKORIAN GENERAL 2005 D E S C R IP T IO N The 2005 is a common base transistor capable of providing 5 watts of C W RF output power at 2000 MHz. This hermetically sealed transistor is specifically designed
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125Woâ
acrian RF POWER TRANSISTOR
transistor A 584
acrian inc
ACRIAN
acrian 2001
584 TRANSISTOR
acrian ic
acrian 1
20w50
acrian rf power
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simco
Abstract: 1C41 linear amplifier 470-860 UTV-020 MJE172 UTV020 1j25 uj 09 acrian RF resistor 470-860 mhz Power amplifier 5 w
Contextual Info: 0182998 ACRIAN T? INC fffU!5ifll8K!^5i^mp^p D E ^ G l f l a cHfl □ 0 ü l S 3 ci 7 T - 3 3 'O l 1P^SSü? IPP M M NHM M W HMnWI MT ^ W^OT MMM MHHI PMMi VMk Bllfmi Hmm RHM M I MUM HMM | GENERAL DESCRIPTION UTV-020 The UTV-020 Is specifically designed for Class A UHF TV Band
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UTV-020
860MHz
MJE172
iFTANT50V
10jiF
simco
1C41
linear amplifier 470-860
MJE172
UTV020
1j25
uj 09
acrian RF resistor
470-860 mhz Power amplifier 5 w
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S100-28
Abstract: hf amplifier 100w S100-28-2 S15-28 HF Amplifier 200w acrian inc acrian
Contextual Info: 01829 98 ACRIAN INC T7 G EN ER A L 97D 0 1 138 D D E I lD lf lS T T f l 0 0 0 1 1 3 0 _ J = 3 3 -1 5 S100-28 D E S C R IP TIO N Ì00 WATTS - 28 VOLTS 30 MHz The S100-28 is specifically designed for HF linear applications. It's safe operating area and guaranteed
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S100-28
S100-28
hf amplifier 100w
S100-28-2
S15-28
HF Amplifier 200w
acrian inc
acrian
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acrian RF POWER TRANSISTOR
Abstract: acrian RF POWER TRANSISTOR 300 w transistor c128 C1-28-2 CM25-28 transistor d 571 CM10-28 Acrian transistor c1-28 acrian inc
Contextual Info: ACRIAN INC T7 D E § 0 1 f l 2 □□ □ U h ? 7 p C GENERAL DESCRIPTION The C1-28 is a UHF power transistor designed to produce 1 watt of RF power when operated from a 28V power supply and used below 500MHz. The C1 -28 is also available in a stud package as part No. C1-28Z.
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01fl2!
C1-28
500MHz.
C1-28Z.
C1-28/C1-28Z
-65to
GDD117D
C1-28/Z-4
acrian RF POWER TRANSISTOR
acrian RF POWER TRANSISTOR 300 w
transistor c128
C1-28-2
CM25-28
transistor d 571
CM10-28
Acrian
transistor c1-28
acrian inc
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acrian motorola
Abstract: ACRIAN MPA201 RF01 acrian inc
Contextual Info: & g K B B H B B S 0182998 ACRIAN INC 17 D ESO IA S DD01D43 T □ T-33-11 iV i B k mlE If/lilife h \ G ENER AL MPA 201 D E S C R IP TIO N 0.5 WATTS 12.5 VOLTS 500 MHz The MPA-201 is an amplifier device designed for broadband performance to 500 MHz in a format suitable for stripline
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01fl5â
DD01D43
T-33-11
MPA-201
40dBm
1MV309
acrian motorola
ACRIAN
MPA201
RF01
acrian inc
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acrian RF POWER TRANSISTOR
Abstract: TU S1 3003 VTV-300 VTV-300-2 DDD1557 acrian RF POWER TRANSISTOR cd4792-4 VTV-300-4 F627 F627-8 F627-8-Q1
Contextual Info: 0182998 ACRIAN m ybui i» m w « p in y in a w M K • ■ ■ <p w * w T7 INC m m w v m m « m m h D Ë^G lflETifl n a n a a m a m n n w □D01524 S T—33—13 i A GENERAL VTV-300 DESCRIPTION The VTV-300 is a silicon NPN transistor designed for broadcast
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T-33-13
VTV-300
F627-8
acrian RF POWER TRANSISTOR
TU S1 3003
VTV-300-2
DDD1557
acrian RF POWER TRANSISTOR cd4792-4
VTV-300-4
F627
F627-8-Q1
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trw rf
Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W
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UMOB55
RZ2731B60W
RZ2833B60W
RZ3135B50W
OME25
OME30L
MKB12100W5
BAL0204
UMIL60
UMIL70
trw rf
ACRIAN
trw rf transistors
acrian inc
trw transistors
TRW MICROWAVE
acrian rf power
FUJITSU MICROWAVE
MRF648
TPM4130
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acrian RF POWER TRANSISTOR
Abstract: PU 391 acrian inc
Contextual Info: GENERAL 2010 DESCRIPTION 10 WATT - 28 VOLTS 2000 MHZ The 2010 is a common base transistor capable of providing 10 watts of CW RF output power in the 2000 MHz band. This hermetically sealed transistor is specifically designed for Class C amplifier applications. It utilizes gold
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U14Q9
400mA,
D0D1411
10nfd@
acrian RF POWER TRANSISTOR
PU 391
acrian inc
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ACRIAN
Abstract: acrian inc 8Z-2 AMPLIFIER 5W
Contextual Info: I AGRIAN INC DE I GläSnfl DGD13D1 7 È M t m m m _ I \ r n m W ! B5-8Z GENERAL DESCRIPTION The B5-8Z is specifically designed for 8 Volt operation in VHF power amplifier applications covering the range from 100 - 200 MHz. It uses single chip construction and
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GG13D1
0DG13D3
ACRIAN
acrian inc
8Z-2
AMPLIFIER 5W
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