ACC 2089 Search Results

Acc 2089

Abstract: ACC MICRO 2089 acc micro 2168 acc micro 2048 ACC MICRO 2086 ACC Microelectronics Corporation ACC Microelectronics ACC MICRO 2178 acc micro 2016 acc micro 2066
Contextual Info: 2016 ACC MICRO 2016 BUFFER AND MUX LOGIC DATA BOOK MARCH 1997 Revision 2.0 ACC Microelectronics Corporation, 2500 Augustine Drive, Santa Clara, CA 95054 Phone: 408 980-0622 Fax: (408) 980-0626 TM ACC Micro 2016 ACC Microelectronics Corporation 2500 Augustine Drive,

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20891-3E FLASH MEMORY CMOS 16 M 2 M x 8/1 M × 16 BIT Dual Operation MBM29DS163TE/BE 10/12 • DESCRIPTION The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each. The device is offered in 48-pin TSOP (I) and 48-ball FBGA packages. This device is

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20891-4E FLASH MEMORY CMOS 16 M 2 M x 8/1 M × 16 BIT Dual Operation MBM29DS163TE/BE10 • DESCRIPTION The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each. The device is offered in 48-pin TSOP (1) and 48-ball FBGA packages. This device is

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20891-3E FLASH MEMORY CMOS 16 M 2 M x 8/1 M × 16 BIT Dual Operation MBM29DS163TE/BE 10/12 • DESCRIPTION The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each. The device is offered in 48-pin TSOP (I) and 48-ball FBGA packages. This device is

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-3E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE70/90 MBM29PL3200BE70/90 • DESCRIPTION MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each

20890

Abstract: MBM29PL3200BE70 MBM29PL3200BE90 MBM29PL3200TE70 MBM29PL3200TE90
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-3E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE70/90 MBM29PL3200BE70/90 • DESCRIPTION MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-2E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE70/90 MBM29PL3200BE70/90 • DESCRIPTION The MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits

29lv320be

Abstract: 29LV320TE FPT-48P-M19 FPT-48P-M20 MBM29LV320TE 29lv320t
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20894-1E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT MBM29LV320TE 80/90/10 MBM29LV320BE80/90/10 • DESCRIPTION The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words

29LV320TE

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20894-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT MBM29LV320TE 80/90/10 MBM29LV320BE80/90/10 • DESCRIPTION The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20894-4E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT MBM29LV320TE 80/90/10 MBM29LV320BE80/90/10 • DESCRIPTION The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words

20890

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-1E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE/BE 70/90 • DESCRIPTION The MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each or 1 M words of 32 bits each. The device is offered in 90-pin SSOP and 84-ball FBGA packages. This device

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20894-3E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT MBM29LV320TE 80/90/10 MBM29LV320BE80/90/10 • DESCRIPTION The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words

FPT-48P-M19

Abstract: FPT-48P-M20 MBM29LV320TE
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20894-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT MBM29LV320TE 80/90/10 MBM29LV320BE80/90/10 • DESCRIPTION The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-4E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE70/90 MBM29PL3200BE70/90 • DESCRIPTION MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each

Marking code vacc

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-3E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-2E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-3E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in

SA611

Abstract: 29DL320
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20896-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL320TF/BF 70/80/10 • DESCRIPTION The MBM29DL320TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20896-3E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL320TF/BF 70/80/10 • DESCRIPTION The MBM29DL320TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M

BGA-48P-M13

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20898-1E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL640F 60/70 • DESCRIPTION MBM29DL640F is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device comes in 48-pin TSOP (I) and 48-ball FBGA packages. This device is designed to be

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20898-2E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL640F 60/70 • DESCRIPTION MBM29DL640F is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device comes in 48-pin TSOP (I) and 48-ball FBGA packages. This device is designed to be

Acc 2089

Abstract: HALT 4-1070 HT83R074 MS-013
Contextual Info: HT83R074 Q-VoiceTM Technical Document • Tools Information · FAQs · Application Note Features · Operating voltage: 2.4V~5.2V · Two 8-bit programmable timer counter with 8-stage prescaler and one time base counter · Up to 1ms 0.5ms instruction cycle with 4MHz (8MHz)

Contextual Info: HT83R074 Q-VoiceTM Technical Document • Tools Information · FAQs · Application Note Features · Operating voltage: 2.4V~5.2V · Two 8-bit programmable timer counter with 8-stage prescaler and one time base counter · Up to 1ms 0.5ms instruction cycle with 4MHz (8MHz)