AC125 DATA SHEET Search Results

pse jet THERMAL FUSE

Abstract: Jet 2A 250v fuse SOC 8A fuse AC125 H-0032-2 pse jet 300 2.5A THERMAL FUSE Project Report of fire alarm using thermistor DC35VP11 DC35VP11CT soc 4a fuse
Contextual Info: This catalog supersedes all prior catalogs. Date of issue: December 2004 SAFETY WARNINGS 1. Improper selection and use of products in this catalog, such as exceeding recommended established characteristics or maximum ratings or using in unsuitable operating conditions, may result in serious injury,

DDR3L-1866

Abstract: MT41K256M16 MT41K1G4 MT41K512M8 901KB 96-ball FBGA 512M8 micron FBGA SDRAM
Contextual Info: 4Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C

DDR3L-1066

Abstract: DDR3L-800 78-Ball TIS87
Contextual Info: 2Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C

MT41K64M16

Contextual Info: 1Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K256M4 – 32 Meg x 4 x 8 banks MT41K128M8 – 16 Meg x 8 x 8 banks MT41K64M16 – 8 Meg x 16 x 8 banks Description • TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C – 32ms at 85°C to 95°C

MT41K128M16

Abstract: 75110n 96-ball FBGA AC135 TIS95 ac130 sec DDR3L-800 DDR3L-1866 MT41K512M4
Contextual Info: 2Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C

Contextual Info: 4Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C

MT41K256M16

Abstract: MT41K512M8RH-125 256M16 MT41K512M8 MT41K srt 8n ac130 sec AC135 MT41K512M8RH-125M MT41K512M8RH
Contextual Info: 4Gb: x4, x8, x16 DDR3L-RS SDRAM Description 1.35V DDR3L-RS SDRAM MT41K1GM4 - 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description Features DDR3L-RS SDRAM 1.35V is a low current self refresh version, via a TCSR feature, of the DDR3L SDRAM

MT41K

Abstract: MT41K256M16 MT41K512M8 256M16 DDR3L DC90 25-micron DDR3L-1333
Contextual Info: Preliminary‡ 4Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description Features DDR3Lm SDRAM 1.35V is a low current self refresh version, via a TCSR feature, of the DDR3L SDRAM

M471B5273DH0

Contextual Info: Rev. 1.31. Dec. 2010 M471B5773DH0 M471B5273DH0 204pin Unbuffered SODIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

MT41K256M16

Contextual Info: Preliminary‡ 4Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description Features DDR3Lm SDRAM 1.35V is a low current self refresh version, via a TCSR feature, of the DDR3L SDRAM

256M16

Abstract: MT41K512M smd code marking ID MT41k micron
Contextual Info: Preliminary‡ 4Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description Features • • • • • Automatic self refresh ASR Write leveling Multipurpose register Output driver calibration

k4b1g1646g-bck0

Abstract: K4B1G1646G-BCH9 K4B1G1646G K4B1G1646G-BCF8 K4B1G1646G-BCNB K4B1G1646G 1600 K4B1G1646GBCH9 K4B1G16 470 ohm resistance DDR3-2133
Contextual Info: Rev. 1.0, Nov. 2010 K4B1G1646G 1Gb G-die DDR3 SDRAM x16 only 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K4B1G1646G-BCK0

Abstract: K4B1G1646G-BCH9 K4B1G1646G-BCF8 K4B1G1646G K4B1G1646G-BCNB k4b1g1646g-bch K4B1G1646GBCH9 K4B1G1646G-BCMA K4B1G1646G-BCF DDR3-2133
Contextual Info: Rev. 1.11, Jun. 2011 K4B1G1646G 1Gb G-die DDR3 SDRAM x16 only 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

96-ball FBGA

Contextual Info: 2Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description Features • • • • • • Self refresh temperature SRT Automatic self refresh (ASR) Write leveling Multipurpose register

Contextual Info: Rev. 1.01, Dec. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

K4B2G16

Abstract: K4B2G1646C-HCNB K4B2G1646C-HCK0 K4B2G1646C-HC
Contextual Info: Rev. 1.11, Nov. 2010 K4B2G1646C 2Gb C-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

784038

Abstract: ALS157 as04 78P4038 IE-784038-NS-EM1 IE-78K4-NS uPD784031 uPD784031Y uPD784038 uPD784038Y
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

M471B5273EB0

Abstract: M471B5773 K4B2G0846
Contextual Info: Rev. 1.2. Apr. 2012 M471B5273EB0 204pin Unbuffered SODIMM based on 2Gb E-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

M378B5173CB0

Abstract: m378b5173 Samsung ddr3 1600 SDRAM
Contextual Info: Rev. 1.1, Apr. 2012 M378B5173CB0 240pin Unbuffered DIMM based on 4Gb C-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: Rev. 1.01, Dec. 2010 M378B2873GB0 M391B2873GB0 M378B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

K4B1G1646G-BCK0

Abstract: K4B1G1646G-BCH9 K4B1G1646G-BCMA K4B1G1646G-BCN
Contextual Info: Rev. 1.11, Jun. 2011 K4B1G1646G 1Gb G-die DDR3 SDRAM x16 only 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K4B2G1646C-HCH9

Abstract: K4B2G1646C K4B2G1646C-HCK0 K4B2G1646C-HC K4B2G1646C-HCK 128mx16 ddr3 k4B2G1646 K4B2G16 K4B2G1646C-HCNB DDR3-2133
Contextual Info: Rev. 1.11, Nov. 2010 K4B2G1646C 2Gb C-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K4B2G1646Q-BCK0

Abstract: K4B2G1646q
Contextual Info: Rev. 1.0, Aug. 2013 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K4B4G0846q

Contextual Info: Rev.1.0, Jun. 2013 K4B4G0446Q K4B4G0846Q 4Gb Q-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed