AC DIODE LF Search Results
AC DIODE LF Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ24V |
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Zener Diode, 24 V, USC | Datasheet | ||
CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
CEZ5V6 |
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Zener Diode, 5.6 V, ESC | Datasheet |
AC DIODE LF Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Semikron skiip 22 nab 12
Abstract: semikron skiip 31 nab 12 T 18 SKiiP 33 NEC 125 To SEMIKRON SKIIP 20 NAB 12 T 45 semikron skiip 20 nab 12 I T 38 semikron skiip 83 ec Semikron skiip 31 nab 12 T 16 semikron skiip 31 nab 125 t 12 Semikron skiip 30 nab 12 semikron skiip 33 NEC 125
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Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2625, PS2626, PS2625L, PS2626L HIGH ISOLATION VOLTAGE AC INPUT LARGE FORWARD AC INPUT TYPE 6 PIN PHOTOCOUPLER — NEPOC Series — DESCRIPTION PS2625, PS2626 and PS2625L, PS2626L are optically coupled isolators containing a GaAs light em itting diode |
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PS2625, PS2626, PS2625L, PS2626L PS2626 PS2626L | |
Contextual Info: HSB88WS Silicon Schottky Barrier Diode for Double Balanced Mixer HITACHI Features • • • • Small ÀVFand AC. Good for surface mounting on printed circuit board. Each diode can be biased. Wideband operation. Ordering Information Type No. M ark Package Code |
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HSB88WS ADE-208-026B HSB88W 200pF, | |
Contextual Info: SIE D HL1361 AC • MMIbaOS OGllbE? ÖÖT ■ H I T M -Under Development HITACHI/ OPTOELECTRONICS Laser Diode D escription T—41—05 HL1361AC is a 1.3 /¿m InG aA sP distributedfeedback (DFB) laser diode with X/4 phase shifted. |
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HL1361 HL1361AC | |
photo transistor til 78
Abstract: Transistor AC 187 transistor tl 187 TL 187 TRANSISTOR NPN TIL188-4 AC 187 npn transistor TO 1 E65085 Til 160 Phototransistor Til 78 TIL187-4
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TIL188-4 SOOSQ12A D29BO. E65085 TIL187 photo transistor til 78 Transistor AC 187 transistor tl 187 TL 187 TRANSISTOR NPN AC 187 npn transistor TO 1 E65085 Til 160 Phototransistor Til 78 TIL187-4 | |
JU003Contextual Info: ETK81-O5O 50a S ± / < 7 — POWER TRANSISTOR MODULE I f ô ii : : Features ij ' s r y i * - K r t s * 7 'j- s iw High DC Current Gain • hFE*', S ' . ' • ífe ltífí Including Free Wheeling Diode Insulated Type : Applications • • AC AC M otor Controls |
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ETK81-O5O Ic680 JU003 | |
TIL188-4Contextual Info: TILI 87-1 THRU TILI 87-4 TILI 88-1 THRU TILI 88-4 AC-INPUT OPTOCOUPLERS/OPTOISOLATORS D2980, JANUARY 1987-REVISED JULY 1989 AC Signal Input • High Current Transfer Ratio, 500% Minimum at Ip - 10 mA, Up to 1500% Minimum at If - 2 mA with Four Categories Gallium Arsenide Dual-Diode Infrared Source |
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D2980, 1987-REVISED TIL187 TIL188-4 | |
Contextual Info: TIL 194, T I L 1 95, TILI 96, TIL194A, TIL195A, TIL196A TIL194B, TIL195B, TIL196B AC INPUT OPTOCOUPLERS D 3 2 8 7 , M A Y 1 9 8 9 -R E V IS E D SEPTEMBER 198 9 • AC Signal Input • Choice of Three Current-Transfer Ratios • Gallium-Arsenide Diode Infrared Source |
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TIL194A, TIL195A, TIL196A TIL194B, TIL195B, TIL196B E65085 | |
Contextual Info: □IXYS DSEP 15-06 A Advanced Technical Data HiPerFRED Epitaxial Diode with Soft Recovery V RSM V V RRM VRRM 600 V t rr 35 ns TO-220 AC Type V 600 600 Symbol DSEP 15-06 A Test Conditions Maximum Ratings per diode I frm Tc = 135°C ; rectangular, d = 0.5 |
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O-220 1500C D2-31 | |
Contextual Info: □IXYS DSEP 15-03 A Advanced Technical Data HiPerFRED Epitaxial Diode with Soft Recovery V RSM V V RRM V RRM 300 V t rr 30 ns TO-220 AC Type V 300 300 Symbol DSEP 15-03 A Test Conditions Maximum Ratings per diode I fr m Tc = 135°C ; rectangular, d = 0.5 |
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O-220 1500C D2-31 | |
Contextual Info: □IXYS DSEP 8-06A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Soft Recovery V RSM V V RRM 10 A V RRM 600 V t rr 35 ns TO-220 AC Type V 600 600 DSEP 8-06A A = Anode, C = Cathode Symbol Test Conditions Maximum Ratings per diode U rms 35 |
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O-220 1500C D2-31 | |
Contextual Info: □IXYS DSEP 12-12A Advanced Technical Data HiPerFRED Epitaxial Diode with Soft Recovery V RSM V V RRM 15 A FAV V RRM 1200 V t rr 40 ns TO-220 AC Type V 1200 1200 DSEP 12-12A Symbol Test Conditions Maximum Ratings per diode I frm Tc = 125°C ; rectangular, d = 0.5 |
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2-12A O-220 D2-31 | |
6sv7 tube
Abstract: 1 watt diode DC1515
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M8-210 6sv7 tube 1 watt diode DC1515 | |
E67349
Abstract: TLP330
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TLP330 TLP330 150mA. 150mA 5000Vrms UL1577, E67349 220kH E67349 | |
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Contextual Info: □IXYS DSEP 29-06A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Soft Recovery V RSM V V RRM 30 A V RRM 600 V t rr 35 ns TO-220 AC Type V 600 600 Symbol DSEP 29-06A Test Conditions Maximum Ratings per diode U rms U rm Tc = 130°C ; rectangular, d = 0.5 |
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9-06A O-220 1500C D2-31 | |
Contextual Info: AC, 1 min Operating / stor. temperature Q Sym bol vV¡sol 4> —I o o —I SKiiP 3-phase bridge Absolute Maximum Ratings SKiiPPACK C o n d itio n s 1> Values U nits 3000 V -25.+85 °C IGBT and Inverse Diode V ces V cc5 lc Tj 3) If Ifm Ifsm l2t Diode) Driver |
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Contextual Info: □IXYS DSEP 29-12A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Soft Recovery V RSM V V RRM 30 A V RRM 1200 V t rr 40 ns TO-220 AC Type V 1200 1200 DSEP 29-12A Symbol Test Conditions Maximum Ratings per diode U rms U rm Tc = 115°C ; rectangular, d = 0.5 |
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9-12A O-220 D2-31 | |
Contextual Info: nixYS DSEP 8-12A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Soft Recovery V RSM V V RRM 10 A V RRM 1200 V t rr 40 ns TO-220 AC Type V 1200 1200 DSEP 8-12A Symbol Test Conditions A = Anode, C = Cathode Maximum Ratings per diode U rm Tc = 115°C ; rectangular, d = 0.5 |
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O-220 1500C D2-31 | |
0831VContextual Info: TIL920, TIL921, TIL922, TIL920A, TIL921A, TIL922A TIL920B, TIL921B, TIL922B SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS SOOS032-D3908, FEBRUARY 1992 • AC Signal Input • Choice of Three Current-Transfer Ratios • Gallium-Arsenide Diode Infrared Source • • |
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TIL920, TIL921, TIL922, TIL920A, TIL921A, TIL922A TIL920B, TIL921B, TIL922B SOOS032-D3908, 0831V | |
TLP639Contextual Info: TLP639 GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA OFFICE MACHINE. Unit in mm HOUSEHOLD USE EQUIPMENT. PROGRAMMABLE CONTROLLERS. AC/DC-INPUT MODULE. TELECOMMUNICATION. The TOSHIBA TLP639 consists of two gallium arsenide infrared emitting diode connected inverse parallel, |
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TLP639 TLP639 5000Vrms IEC380/VDE0806 500Vac 600Vdc | |
Contextual Info: TOSHIBA GaAs IRED & PHOTO-TRANSISTOR TLP630 Programmable Controllers AC/DC-Input Module Telecommunication The Toshiba TLP630 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel in a six lead |
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TLP630 5000Vrms UL1577, E67349 TLP630 | |
rjk5020
Abstract: HAT2195WP pfcpwm H8N0801AB HA16167 rjk0305dpb hat2165h RJK065 RJK5020DPK RJK0456D HA16174
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HA16174 HA16158 HA16341 HA16342 HA16167 rjk5020 HAT2195WP pfcpwm H8N0801AB HA16167 rjk0305dpb hat2165h RJK065 RJK5020DPK RJK0456D HA16174 | |
H11AA1Contextual Info: GaAs IRED a PHOTO-TRANSISTOR H11AA1,2,3,4 TENTATIVE DATA OFFICE MACHINE. Unit in mm HOUSEHOLD USE EQUIPMENT. PROGRAMMABLE CONTROLLERS. AC/DC-INPUT MODULE. TELECOMMUNICATION. The TOSHIBA HllAA series consists of two gallium ar senide infrared emitting diode connected inverse paral |
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H11AA1 H11AA1: H11AA2: H11AA3: H11AA4: 5000Vrms IEC380/VDE0806 500Vac 600Vdc | |
E67349
Abstract: TLP631 TLP632
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TLP631 TLP632 TLP631, TLP632 5000Vrms UL1577, E67349 E67349 |