AC/DC ELECTRONIC LOAD Search Results

BUSBAR calculation

Abstract: BUSBAR calculation datasheet
Contextual Info: AC/DC Current transducer AHR-B5 IPN = 500 . 2000 A The transducer for the electronic measurement of DC & distorted AC waveform currents, with galvanic isolation between the primary circuit power and the secondary circuit (measurement). True RMS 0-5 V voltage output.

HNC20

Abstract: lem module HNC200 HNC-200P 570C lem module 50 c570c
Contextual Info: Current Transducer HNC-200P 200A-100mA IPN = 200 A For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP

lem lts

Abstract: lem 703 15-NP
Contextual Info: IPN = 15 At Current Transducer LTS 15-NP For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16058 Electrical data IPN IPM ÎPDC

lem module 100-S

Abstract: 5045-04AG LEM module application note HAC 200-S
Contextual Info: Current Transducers HAC 100.800-S IPN = 100 . 800 A For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data Primary nominal

25-P

Abstract: lem 25-p
Contextual Info: Current Transducer HX 02.06-P IPN = 2 . 6 A For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data Primary nominal Primary current

hxs 20-np/sp30

Abstract: HXS 20-NP
Contextual Info: Current Transducer HXS 20-NP/SP30 IPN = 5 - 10 - 20 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). All Data are given with a R L = 10 kΩ

electric forklift

Abstract: 3p25
Contextual Info: Current Transducer HTFS 200.800-P IPN = 200 - 400 - 800 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). All Data are given with a R L = 10 kΩ

G3VM-101HR

Abstract: OMRON RELAY 12 V AC
Contextual Info: MOS FET Relays G3VM-101HR Low 100-mΩ ON Resistance. High-power, 1.4-A Switching with a 100-V Load Voltage, SOP Package. • Continuous load current of 1.4 A connection C = 2.8 A . • Dielectric strength of 1,500 Vrms between I/O. • RoHS Compliant • Application Examples

KL2702

Abstract: FUSE-1A
Contextual Info: Data sheet for KL2702, Version 1.0 Signal LED1 Signal LED2 Output 1 Output 2 1 5 2 6 3 7 4 8 230 V Power contact 230 V N Power contact N PE Power contact PE Top view Contact assembly Connection KL2702 | 2-channel solid state load relay up to 230 V AC/DC, 0.3 A

B 1117c

Abstract: 1117c OMRON G6C-1114P sr 8930 G6CU-2117P-VD
Contextual Info: Power PCB Relay G6C SPST-NO Type Breaks 10-A Loads; SPST-NO + SPST-NC Breaks 8-A Load • Compact: 20 x 15 x 10 mm L x W x H . • Low power consumption: 200 mW. • Semi-sealed or fully sealed construction available. • Unique moving loop armature reduces relay size, magnetic

G5V-2-DC12

Abstract: relay g5v
Contextual Info: Low Signal Relay G5V-2 Miniature Relay for Signal Circuits • Suitable for handling low signals in computer peripherals, telecommunications and security equipment. • Capable of switching loads 10 A to 2 A. • Conforms to FCC part 68 1,500 V surge withstand.

Omron

Abstract: G3VM-61DR K139
Contextual Info: G3VM-61AR/DR MOS FET Relays DIP Higher power, 2-A switching with a 60-V load voltage, DIP package. Low 80 mΩ ON Resistance. • Continuous load current of 2 A. • Switches minute analog signals. G3VM-61AR/DR • Dielectric strength of 2,500 Vrms between I/O.

5v dil reed relay

Abstract: 5v 10mA reed relay SIL12 12v reed relay 12v 10mA reed relay
Contextual Info: MEDER electronic SIL Series Single-In-Line Reed Relays DESCRIPTION Single-In-Line Reed Relays reduce the required space to a minimum. Requiring only half the PCB area of the DIP or DIL series, the SIL relays offer all the advantages of Reed Technology. FEATURES

M27C4002

Abstract: JESD97 PDIP40 PLCC44 Q0-Q15 M27C4002 2006
Contextual Info: M27C4002 4 Mbit 256Kb x16 UV EPROM and OTP EPROM Feature summary • 5V ± 10% Supply voltage for Read operations ■ Access time: 45ns ■ Low Power consumption – Active Current 70mA at 10MHz – Standby current 100µa ■ Programming Voltage: 12.75V ± 0.25V

M27C4002

Contextual Info: M27C4002 4 Mbit 256Kb x16 UV EPROM and OTP EPROM Feature summary • 5V ± 10% Supply voltage for Read operations ■ Access time: 45ns ■ Low Power consumption – Active Current 70mA at 10MHz – Standby current 100µa ■ Programming Voltage: 12.75V ± 0.25V

Electronic Volume Controller IC

Abstract: 300MIL MS-001 MS-013 PT2256V PT2256V-S PT2256V-SN TC9235P
Contextual Info: Tel:886-2-66296288 Fax:886-2-29174598 URL:http://www.princeton.com.tw Electronic Volume Controller IC PT2256V DESCRIPTION PT2256V is an electronic volume controller IC utilizing CMOS Technology specially designed for use on audio equipment. It has 2 built-in channels making it ideally suitable for mono and stereo sound

CR10

Abstract: M58LT256JSB M58LT256JST
Contextual Info: M58LT256JST M58LT256JSB 256 Mbit 16 Mb x 16, multiple bank, multilevel, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O Buffers – VPP = 9 V for fast program

TC531024P-12

Contextual Info: TOSHIBA TC531024P-12/15 TC531024F-12/15 SILICON STACKED GATE CMOS 65,536 WORD x 16 BIT CMOS MASK ROM Description The T C 5 3 1 0 2 4 P /F is a 1,048,576 bit read only m em ory organized as 65,536 words by 16 bits. The T C 5 3 1 0 2 4 P /F is fabricated using Toshiba’s advanced C M O S technology w hich results in high speed and low pow er features:

U-163

Abstract: JORDAN UC3907 UC3902
Contextual Info: UNITRODE CORPORATION APPLICATION NOTE U-163 THE UC3902 LOAD SHARE CONTROLLER AND ITS PERFORMANCE IN DISTRIBUTED POWER SYSTEMS by Laszlo Balogh Unitrode Corporation UC3902 APPLICATIONS The current demanded by large electronic systems continuously rises due to higher performance and

vfd circuit diagram for motor

Abstract: vfd circuit diagram motor vfd motor circuit diagram vfd circuit diagram scr variable frequency drive circuit diagram AKR-C420L power supply diagram ac drive electronic circuit diagram vfd circuit diagram for ac motor EN61326
Contextual Info: IPN = 2.200A AC Current transducer AKR-C420L Transducer for the electronic measurement AC waveforms current, with galvanic isolation between the primary High power and the secondary circuits (Electronic circuit). Jumper selectable ranges and True RMS 4-20mA current output.

TLCS-47

Contextual Info: TOSHIBA TMP47P452VN, TMP47P452W For program operation, the programming is achieved by using with EPROM programm er TMM2764AD type and adapter socket (BM1120, BM1121). CMOS 4-Bit Microcontroller TMP47P452VN, TMP47P452VF The 47P452V is the OTP microcontroller with 32kbits PROM.

TC5716200D-150

Abstract: 5716200D
Contextual Info: TOSHIBA TC5716200D-150, -200 SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY D escription T heT C 5716200D is a 16,777,216 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is

A0-A21

Abstract: JESD97 M28W640FCB M28W640FCT TFBGA48 AI04389
Contextual Info: M28W640FCT M28W640FCB 64 Mbit 4Mbx16, Boot Block 3V Supply Flash memory Feature summary • Supply voltage – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■ Access times: 70, 85, 90,100ns

Contextual Info: TOSHIBA TC51V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC 51V16400B ST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. T heTC 51V16400B ST uti­ lizes Toshiba's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide operating mar­