ABSORBER NEC Search Results

surge absorber

Abstract: ZNR Y
Contextual Info: Surge Absorber Units “ZNR” Surge Absorber Units The Surge Absorber Unit contains Y, ∆ or p connected ZNRs surge absorbers and, if necessary, a circuit breaker in a box. These Surge Absorber Units are designed for surge protection of industrial electric equipment where reliability

surge absorber

Abstract: EC139 absorber
Contextual Info: Surge Absorber Units “ZNR” Surge Absorber Units The Surge Absorber Unit contains Y, ∆ or π connected ZNRs surge absorbers and, if necessary, a circuit breaker in a box. These Surge Absorber Units are designed for surge protection of industrial electric equipment where reliability

surge absorber

Abstract: absorber 3 WIRE ZNR
Contextual Info: Surge Absorber Units ÒZNR âÓ Surge Absorber Units The Surge Absorber Unit contains Y, Æ or p connected ZNRs surge absorbers and, if necessary, a circuit breaker in a box. These Surge Absorber Units are designed for surge protection of industrial electric equipment where the

NSAD500H

Abstract: D16235EJ1V1DS00
Contextual Info: DATA SHEET SURGE ABSORBER DEVICES NSAD500H ELECTROSTATIC DISCHARGE SURGE ABSORBER DEVICES QUAD TYPE: COMMON ANODE SC-88A PACKAGE PACKAGE DRAWING Unit: mm DESCRIPTION This product series is a low capacity for ESD surge absorber 2.1 ± 0.1 devices. Use by 100 to 500 Mbps class data line (USB2.0,

NSAD500F

Contextual Info: DATA SHEET SURGE ABSORBER DEVICES NSAD500F ELECTROSTATIC DISCHARGE SURGE ABSORBER DEVICES DUAL TYPE: COMMON ANODE SC-59 PACKAGE PACKAGE DRAWING Unit: mm DESCRIPTION This product series is a low capacity for ESD surge absorber 2.8 ± 0.2 0.4 +0.1 -0.05 devices. Use by 100 to 500 Mbps class data line (USB2.0,

absorber nec

Abstract: NSAD500H
Contextual Info: DATA SHEET SURGE ABSORBER DEVICES NSAD500H ELECTROSTATIC DISCHARGE SURGE ABSORBER DEVICES QUAD TYPE: COMMON ANODE SC-88A PACKAGE DESCRIPTION PACKAGE DRAWING Unit: mm <R> NSAD500H is a low capacity ESD surge absorber developed for 2.1 ± 0.1 100 to 500 Mbps-class data line ESD noise protection, such as

NSAD500H

Contextual Info: DATA SHEET SURGE ABSORBER DEVICES NSAD500H ELECTROSTATIC DISCHARGE SURGE ABSORBER DEVICES QUAD TYPE: COMMON ANODE SC-88A PACKAGE PACKAGE DRAWING Unit: mm DESCRIPTION This product series is a low capacity for ESD surge absorber 2.1 ± 0.1 devices. Use by 100 to 500 Mbps class data line (USB2.0,

NSAD500S

Abstract: surge absorber
Contextual Info: DATA SHEET SURGE ABSORBER DEVICES NSAD500S ELECTROSTATIC DISCHARGE SURGE ABSORBER DEVICES DUAL TYPE: COMMON ANODE SC-70 PACKAGE PACKAGE DRAWING Unit: mm DESCRIPTION This product series is a low capacity for ESD surge absorber 2.1 ± 0.1 devices. Use by 100 to 500 Mbps class data line (USB2.0,

YP-141N

Abstract: YA-501 ys-301 YP-141 N YS-701 zener diodes color coded YP-251 YP-501M yp501 surge absorber
Contextual Info: BL SURGE ABSORBER BL mini Surge Absorber BLSA , invented and produced by Japan BL Kogyo INC. , is a series of high-tech electronic components and is fully protected by international patent law . Its patent register number in Japan is HEI 7-16632 ; in USA: 08/378,969 ; in Korean: 2021/1995 ; in China: 94202711.6 . BL Surge

andrew 13 GHz microwave antenna

Abstract: Andrew antennas Andrew antennas 4.5 andrew feed microwave antenna 1427-1535 MHz
Contextual Info: Antenna Types Shielded Antennas Shielded antennas include a low-VSWR feed, shielded reflector with RF absorber, a planar radome and a vertical pipe mount. Because of their construction, this series of antennas affords superior radiation characteristics, rugged

Siemens RF

Abstract: M8613
Contextual Info: Siemens Matsushita Components Requirements for RF Absorber Chambers Used for Measurement of Radiated Emissions Author: A. Kohling, Erlangen If autom ated radiation emission m easurem ents are to yield reproducible results, they must be perform ed in shielded

IC-3523

Abstract: IC-6342 MEI-1202 MF-1134 IEI-1213 power transistor array
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1458 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1458 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and

andrew 13 GHz microwave antenna

Contextual Info: Antenna Types Shielded Antennas Shielded antennas include a low-VSWR feed, painted reflector and shield with RF absorber, a planar radome and a m ount fo r attachment to a vertical pipe. This series of antennas provides excellent radiation characteristics,

IC-6634

Abstract: PA1478 MEI-1202 MF-1134 IEI-1213 2di50 DARLINGTON TRANSISTOR ARRAY
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1478 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1478 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and

Bolt Torque M32

Abstract: hydraulic shock absorber RBC2015 RBC0805 RB27-X331 RBC1411 shock absorber RBC1007 Energy Me bm10
Contextual Info: Shock Absorber Series RB Impact and noise absorption Automatic adjustment to the most appropriate absorption performance Dampening to meet the high speed requirements of the modern world. Specially designed orifice can absorb energy comprehensively and most appropriately in many different

iei-1209

Abstract: uPA1438 transistor CD 910 IC351 IC-3517 IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY uPA1438 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The ¿¿PA1438 is NPN silicon epitaxial D arlington (in millimeters) Power Transistor A rray that built in Surge Absorber and

iei-1209

Abstract: PA1428 IC-6633 IEI-1213 MEI-1202 MF-1134 NEC RELAY DARLINGTON TRANSISTOR ARRAY
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY /¿PA1428 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION The/xPA1428 is NPN silicon epitaxial D arlington Power T ransistor A rray th at b u ilt in Surge Absorber 4 circuits

Contextual Info: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR _ /¿PA1500B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The ¿¡PA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, m otor and lamp driver.

G10597

Abstract: pa1500bh uPA1500 IEI-1213 MEI-1202 MF-1134 G-1059 PA1500B
Contextual Info: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1500B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The µPA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and lamp driver.

PA1501h

Abstract: nec pa1501h
Contextual Info: N E C ,r • DATA SHEET iiPA1501 COMPOUND FIELD EFFECT POWER TRANSISTOR - A N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The /¿PA1501 is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and

PA1500B

Abstract: PA1500BH
Contextual Info: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR ju P A 1 5 0 0 B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The /¿PA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for

UPA1500

Abstract: IC-3326 DIODE u5 TEA-1037 IEI-1213 MEI-1202 MF-1134 IPA1500H fet 9411
Contextual Info: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR »PA1500 N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The /iP A1500 is N-channel Power MOS FET Array in millimeters that built in 4 circuits and surge absorber designed for solenoid, m otor and lamp driver.

MSQB200R

Abstract: philips 0805 2r 104 pf RBA14 MSQB100R msqb100a MSQ50R MSQB50A RBA2015-X821 pinion driven rotary table MSQB10
Contextual Info: Rotary Table Series MSQ Rack-and-Pinion Type/Size: 10, 20, 30, 50, 70, 100, 200 CRB CRBU CRJ CRA1 CRQ MRQ MSQ MSU External shock absorber type newly introduced to series 1.7-1 Low profile rotary table unit with red Easy mounting of work pieces • Table I.D./O.D. tolerances

Contextual Info: MITSUBISHI SOUND PROCESSORS M65811FP JITTER ABSO RBER FOR DIGITAL AUDIO SYSTEM DESCRIPTIO N The M 6 58 11F P is a digital audio jitter absorber fabricated PIN CONFIGURATIO N TOP VIEW with silicon-gate C M O S technology. Jitter on the digital audio data is rejected by jitter-free