ABB THYRISTOR 5 Search Results

Gate Turn-off Thyristor

Abstract: SG1000R23 westcode cross reference SG1000EX23 SG600EX21 SG700ex22 SG800EX21 equivalent FG2000DV90 fg2000dv-90da DG406BP18
Contextual Info: Gate Turn-off Thyristor Cross Reference Gate Turn-off Thyristor Cross Reference DS5549-2.0 September 2003 ABB - DYNEX ITQRM µF Cs µ ABB Part Number Voltage Maximum CSG 1501-25A01 2500 1500 3 Dynex Nearest Equivalent Part Number DG406BP25 CSG 2001-25A01

mcc 90-12

Abstract: MCC 90-16 mcc 250 thyristor abb mcc 90-12 ABB thyristor modules MCC 65 ABB mcc MCC 90-06 io 8 Thyristor mcc mcc 90-08 ABB thyristor modules
Contextual Info: A S E A BROUN/ABB SEMICON Netz-Thyristor-Module aJ- F | 00Mfl30fl ouuuiiii i l ] Phase control Thyristor-Modules T - 2 5 - 2 3 EE! Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

Thyristor MCD

Abstract: mdc 90-12 ABB thyristor modules 90-08io8 DIODE REDRESSEMENT mcd 132
Contextual Info: A S E A BROüJN/ABB ~fl3 FI Dcmfl30ó QQoans E F SEMICON • Netz-Thyristor-Diode-Module _ _ 1 T— 25-23 S 3 f£ v ~ : B ES Phase control Thyristor-Diode-Modules Daten pro Diode Oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

Thyristor ABB ys 150

Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

PS-4512 diode

Abstract: T 4512 H diode ps 4512 diode diode T 4512 H
Contextual Info: A S E A B R O üJN/ABB A3 S E t l IC O N Schnelle Thyristor-Module D | DD4Ö3DÖ □□ □ □ m T | ~ D T ~ 2, Ç - o Fast switching thyristor modules Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

5516 DIODE

Contextual Info: A S E A Û3 BRO üJN/ABB s e m i c o n Netz-Thyristor-M odule D I □□4Û3DÛ 7 T - 25-23 Phase control Thyristor-Modules Daten pro Diode oderThyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor V r rm V drm

Contextual Info: SKT 553 THYRISTOR BRIDGE,SCR,BRIDGE Capsule Thyristors Thyristors SKT 553 Features # $%&'% * '%(+, *+-% .)(/ %0123 # # # )4-5,+(1& 6+0-5,% 0+*7+8% 91& :15;,% -):%: *11,)48 </+,1. :%-)84 .)(/ -)48,% -):%: *11,)48 =99>-(+(% +4: &%?%&-% ?1,(+8%- 50 (1 @ABB C

GTO hvdc thyristor

Abstract: 5STP 57U4200 abb thyristors 5STP03D6500 6" thyristor for HVDC field controlled thyristor ABB Thyristor Field measurements on High Power Press Pack Semiconductors 5STP20N8500 GTO thyristor ABB
Contextual Info: Phase Control and Bi-directionally Controlled Thyristors ABB Semiconductors The work-horse of power conversion Since its introduction almost 50 years ago, the Phase Control Thyristor has been the back-bone of the high power electronics industry. Its field of application ranges from kW DC-drives

Contextual Info: A S E A 03 BROüJN/ABB SEMICON IR Rückwärtsleitende Thyristoren Thyristor V drm V A A/°C A ft 10 ms 8,3 ms 10 ms Tv j =45°C tv jm A A A2s A2s 500 600 700 300 190 110 330 215 120 2850 2 700 CSR 146-05 i- Thyr. CSR 146-06 iCSR 146-07 i- Diode 500 600 700

Contextual Info: A S E A BROUN/ABB "ai SEMICON GOMöBDö □ O D O lb 'T irjT ' Netzthyristoren Thyristor Phase control thyristors Vdrm Vrrm Itrms V A T A V lfic Itavm Tc = 85°C r Typ/type A/°C It s m n \H 8,3 ms 10 ms A ¡T 10 ms (Tvjm ) Tvj=45°C tvjm A!s fifis Idrm

THYRISTOR cs 550 16

Abstract: thyristor cs 550 CS 110 thyristor CS 250-12 thyristor CS thyristor cs 6 thyristor cs 52 CS thyristor cs 5-10
Contextual Info: A S E A BROWN/ABB SENICON D^ A3 OOMflBOñ □□□□173 Netzthyristoren Thyristor Jf Vdrm Vrrm •trm s V A kAVi^C •tavm Tc = 85°C A/°C A Itsm ft Ovjm 10 ms) 8,3 ms 10 ms Tv j=45°C tvjm A2S A!s A A 3300 54500 45000 V A 350/70 275 CS 295-08 to 4 CS 295-12 to 4

abe 810

Abstract: CS thyristor cs 6 f0023 abb thyristor 500AC CS thyristor cs 5-10 CS 630 F CS 661-32 130238 0/abe 810
Contextual Info: A S E A BROWN/ ABB A3 SEMI CON Netzthyristoren Thyristor Typ/type * 0 0 4 ñ 3 0 fi 0 0 0 0 1 7 5 Phase control thyristors Vr r m •t r m s h w i/Tc hvwM Tc = 85°C V A v drm D I A/°C A •t s m Ovjm 8,3 ms A 10 ms A ft 10 ms) TVJS45°C tvjm A 2S AJS

CS 35 go 06 thyristor

Abstract: thyristor CS 3510 CS thyristor CS 142-06
Contextual Info: A S E A BRO WN/ABB SEMICON Netzthyristoren Thyristor A Tvj =45°C tvjm A A AJS A“S go 4 go 4 io 4 io 4 io 4 400 600 800 1000 1 200 120 70/84 60 1 250 1100 7200 go go go go 8 8 8 8 400 800 1000 1 200 110 70/52 48 790 720 3200 à CS 52-06 go I C S 52-08 io

5STR

Abstract: ABB thyristor 5 thyristor ABB
Contextual Info: 5STR 07F2541 5STR 07F2541 Old part no. TP 918F-675-25 Reverse Conducting Thyristor Properties § Integrated freewheeling diode § Optimized for low dynamic losses Applications • Traction Key Parameters V DRM = I TAVm = I TSM = V TO = rT = tq = 2500 760 14 000

5STR04T2032

Abstract: thyristor t 188 f 1000 5STR tr 453 thyristor
Contextual Info: 5STR 04T2032 5STR 04T2032 Old part no. TP 907FC-370-20 Reverse Conducting Thyristor Properties § Integrated freewheeling diode § Optimized for low dynamic losses Applications § Traction Key Parameters V DRM = 2 000 I TAVm = 374 I TSM = 5 000 V TO = 1.748

ABB thyristor

Abstract: thyristor ABB pt 2399
Contextual Info: 5STR 07F2541 5STR 07F2541 Old part no. TP 918F-675-25 Reverse Conducting Thyristor Properties Integrated freewheeling diode Optimized for low dynamic losses Applications Traction Key Parameters V DRM = I TAVm = I TSM = V TO = rT = tq = 2500 760 14 000 1.391

5STF09D1420

Abstract: TR254 abb 5stf
Contextual Info: 5STF 09D1420 5STF 09D1420 Old part no. TR 907-850-14 Fast Thyristor Properties § Amplifying gate § High operational capability § Optimized turn-off parameters Applications § Power switching applications Key Parameters V DRM, V RRM = 1 400 I TAV = 847 I TSM = 13.0

Contextual Info: SKT 100 THYRISTOR BRIDGE,SCR,BRIDGE Stud Thyristor Line Thyristor SKT 100 Features # $%&'% * '%(+, *+-% .)(/ 0,+-# # )1-2,+(3& 4/&%+5%5 -(25 678 9:; 3& =>? :@;A;B 61(%&*/+10%+C,% .)(/ )1(%&1+()31+, -(+15+&5 *+-% Typical Applications* # DE '3(3& *31(&3, #

50R0500

Abstract: 5SSA20R1600 5SSA23R1300 5SSA38R0800 5SSA23R1400 30R1000 5SSA30R1000 abb traction motor 30R1 5SSA38R0700
Contextual Info: Silicon Surge Voltage Suppressor 5SSA .R Series Doc. No. 5SYA1030-01 Nov.95 Features The 5SSA silicon surge voltage suppressor consists of a diffused pnp-Si-wafer mounted with pressure contact in a hermetically sealed metal-ceramic-package. 5SSA silicon surge voltage suppressors are best suited to protect power thyristors against small

07T1413

Abstract: 5STF07T1413
Contextual Info: 5STF 07T1413 5STF 07T1413 Old part no. TR 907C-700-14 Fast Thyristor Properties § Amplifying gate § High operational capability § Optimized turn-off parameters Applications § Power switching applications Key Parameters V DRM, V RRM = 1 400 I TAV = 710

rt 1602

Contextual Info: 5STF 14F2063 5STF 14F2063 Old part no. TR 918-1410-20 Fast Thyristor Properties § Amplifying gate § High operational capability § Optimized turn-off parameters Applications § Power switching applications Key Parameters V DRM, V RRM = 2 000 I TAV = 1 440

5STF07D1413

Abstract: abb 5stf
Contextual Info: 5STF 07D1413 5STF 07D1413 Old part no. TR 907-700-14 Fast Thyristor Properties § Amplifying gate § High operational capability § Optimized turn-off parameters Applications § Power switching applications Key Parameters V DRM, V RRM = 1 400 I TAV = 710 I TSM = 12.0

5STF11F3010

Abstract: vtm 214-9
Contextual Info: 5STF 11F3010 5STF 11F3010 Old part no. TR 918-1110-30 Fast Thyristor Properties § Amplifying gate § High operational capability § Optimized turn-off parameters Applications § Power switching applications Key Parameters V DRM, V RRM = 3 000 I TAV = 1 112

Contextual Info: 5STF 09T1420 5STF 09T1420 Old part no. TR 907C-850-14 Fast Thyristor Properties § Amplifying gate § High operational capability § Optimized turn-off parameters Applications § Power switching applications Key Parameters V DRM, V RRM = 1 400 I TAV = 847