ABB DIODE 6000 A Search Results

5SDF11H4505

Abstract: Abb diode 6000 A high power igct abb FR 306 Diode
Contextual Info: PRELIMINARY 5SDF 11H4505 5SDF 11H4505 Old part no. DC 889-1100-45 Fast Recovery Diode Properties Optimized soft recovery characteristics Enhanced Safe Operating Area Industry standard housing Cosmic radiation withstand rating Applications Key Parameters V RRM

5SDF63X0400

Abstract: DS 297 kw12-1 DS297
Contextual Info: PRELIMINARY 5SDF 63X0400 5SDF 63X0400 High Frequency Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 10 kHz

kw12-1

Abstract: 63B04 5SDF63B0400 Abb diode 6000 A pt 1000 abb S FR 306 Diode
Contextual Info: PRELIMINARY 5SDF 63B0400 5SDF 63B0400 High Frequency Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 10 kHz

5SDF63X0400

Abstract: Abb c DS297
Contextual Info: PRELIMINARY 5SDF 63X0400 5SDF 63X0400 High Frequency Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 10 kHz

63B04

Abstract: kw12-1
Contextual Info: PRELIMINARY 5SDF 63B0400 5SDF 63B0400 High Frequency Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 10 kHz

FR 306 Diode

Contextual Info: PRELIMINARY 5SDF 0103Z0400 5SDF 0103Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 10 kHz Key Parameters

ABB Semiconductors

Abstract: RCD snubber
Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 6000 1100 18 1.5 0.6 3800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in high-voltage GTO converters

5SDD71B0400

Abstract: diode vrrm 8000 if 7000
Contextual Info: 5SDD 71B0400  5SDD 71B0400 Old part no. DS 808D-7110-04 High current diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 2000 Hz

5SDD0105Z0400

Abstract: 0105Z0400
Contextual Info: 5SDD 0105Z0400 5SDD 0105Z0400 Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 2000 Hz Key Parameters = 400 V RRM = 10 502

FR 306 Diode

Abstract: 5SDF0103Z0400 TC 306 S
Contextual Info: PRELIMINARY 5SDF 0103Z0400 5SDF 0103Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 10 kHz Key Parameters

Contextual Info: 5SDD 71B0400  5SDD 71B0400 Old part no. DS 808D-7110-04 Welding diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 2000 Hz

5SDF90Z0400

Contextual Info: PRELIMINARY 5SDF 90Z0400 5SDF 90Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 10 kHz Key Parameters

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-03 Jan. 10 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters

Contextual Info: PRELIMINARY 5SDF 90Z0400 5SDF 90Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 10 kHz Key Parameters

5SLD 0600J650100

Abstract: 0600J650100
Contextual Info: VRRM = IF = 6500 V 2x 600 A ABB HiPakTM DIODE Module 5SLD 0600J650100 Doc. No. 5SYA 1412-01 04-2012 Low-loss, rugged SPT diode Smooth switching SPT diode for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability

Contextual Info: Data Sheet, Doc. No. 5SYA 1416-02 04-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

20H2500

Abstract: DSC 8500
Contextual Info: VCE IC = = 2500 V 2000 A ABB StakPak H Series Press-pack IGBT 5SNR 20H2500 Doc. No. 5SYA1582-02 May. 04 • High SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package

Contextual Info: Data Sheet, Doc. No. 5SYA 1414-01 04-2011 5SNA 3600E170300 ABB HiPakTM, IGBT Module VCE = 1700 V IC = 3600 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1414-02 11-2011 5SNA 3600E170300 ABB HiPakTM IGBT Module VCE = 1700 V IC = 3600 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-02 Jan 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability

Contextual Info: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 PRELIMINARY Doc. No. 5SYA 1558-01 May 05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability

Contextual Info: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

5SNA0600G650100

Contextual Info: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-03 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal

Contextual Info: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 PRELIMINARY Doc. No. 5SYA 1558-00 Feb. 05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power