ABB DIODE 6000 A Search Results

5SDF63X0400

Abstract: DS 297 kw12-1 DS297
Contextual Info: PRELIMINARY 5SDF 63X0400 5SDF 63X0400 High Frequency Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 10 kHz

FR 306 Diode

Contextual Info: PRELIMINARY 5SDF 0103Z0400 5SDF 0103Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 10 kHz Key Parameters

5SDD71B0400

Abstract: diode vrrm 8000 if 7000
Contextual Info: 5SDD 71B0400  5SDD 71B0400 Old part no. DS 808D-7110-04 High current diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 2000 Hz

Contextual Info: 5SDD 71B0400  5SDD 71B0400 Old part no. DS 808D-7110-04 Welding diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 2000 Hz

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-03 Jan. 10 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters

Contextual Info: PRELIMINARY 5SDF 90Z0400 5SDF 90Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 10 kHz Key Parameters

Contextual Info: Data Sheet, Doc. No. 5SYA 1416-02 04-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-02 Jan 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability

Contextual Info: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 3200 4700 7390 61x103 0.992 0.067 Rectifier Diode V A A A V mΩ 5SDD 48H3200 Doc. No. 5SYA1182-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1

5SDD31H6000

Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 6000 3080 4840 40x103 1.016 0.175 Rectifier Diode V A A A V mΩ 5SDD 31H6000 PRELIMINARY Doc. No. 5SYA1183-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1

Contextual Info: VCE IC = = 4500 V 55 A IGBT-Die 5SMY 12N4500 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1646-00 Jan 08 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Poymide

abb press-pack igbt

Contextual Info: VCE IC = = 4500 V 55 A IGBT-Die 5SMY 12N4501 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1646-01 11 11 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride

5SLA 3600E170300

Abstract: 5SYA2039 3600E170300
Contextual Info: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 HiPak Single DIODE Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: VRRM = 400 V IFAVM = 10029 A IFRMS = 15753 A IFSM = 60000 A VF0 = 0.754 V rF = 0.025 mΩ Housingless Welding Diode 5SDD 0100Z0400 PRELIMINARY Doc. No. 5SYA1180-00 July 06 • High forward current capability • Low forward and reverse recovery losses • High current application up to 2000 Hz

5SNA

Abstract: IGBT 6500 IC da 5SNA0750G650300
Contextual Info: VCE IC = = 6500 V 750 A ABB HiPakTM IGBT Module 5SNA 0750G650300 PRELIMINARY Doc. No. 5SYA 1600-00 Apr 08 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • High insulation package • AlSiC base-plate for high power

IGBT 1500

Abstract: 0609 diode IGBT abb stakpak
Contextual Info: VCE IC = = 2500 V 1300 A ABB StakPak H Series Press-pack IGBT 5SNR 13H2500 Doc. No. 5SYA1517-02 May. 04 • High SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package

Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5000 3810 5990 45x103 0.903 0.136 Rectifier Diode V A A A V mΩ 5SDD 38H5000 Doc. No. 5SYA1177-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1

5SYA2042

Abstract: 5SNA0400J650100
Contextual Info: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-03 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal

20F5000

Contextual Info: VRRM = 5000 V IFAVM = 1850 A IFRMS = 2900 A IFSM = 23500 A VF0 = 0.99 V rF = 0.282 mΩ Ω Rectifier Diode 5SDD 20F5000 Doc. No. 5SYA1162-01 Jan. 01 • Very low on-state losses • Optimum power handling capability Blocking Part Number 5SDD 20F5000 5SDD 20F4800

12M6500

Abstract: 5SMX12M6500
Contextual Info: VRRM = IF = 6500 V 50 A Fast-Diode Die 5SLX 12M6500 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1666-01 July 07 • • • • Fast and soft reverse recovery Low losses Large SOA Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values 1 Parameter

5SDF12F3005

Abstract: dm265 12F3
Contextual Info: 5SDF 12F3005 5SDF 12F3005 Old part no. DM 818-1200-30 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 3 000 I FAVm = 1 256 I FSM = 19 000 V TO = 1.195

5SDF12T3005

Contextual Info: 5SDF 12T3005 5SDF 12T3005 Old part no. DM 818C-1200-30 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 3 000 I FAVm = 1 256 I FSM = 19 000 V TO = 1.195

5STR09F1620

Abstract: 09F1420 1084a 5STR
Contextual Info: 5STR 09F1620 5STR 09F1620 Old part no. TP 918F-870-16 Reverse Conducting Thyristor Properties § Integrated freewheeling diode § Optimized for low dynamic losses Applications • Traction Key Parameters V DRM = 1 600 I TAVm = 814 I TSM = 13 000 V TO = 1.594