ABB DIODE 6000 A Search Results

5SDF63X0400

Abstract: DS 297 kw12-1 DS297
Contextual Info: PRELIMINARY 5SDF 63X0400 5SDF 63X0400 High Frequency Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 10 kHz

FR 306 Diode

Contextual Info: PRELIMINARY 5SDF 0103Z0400 5SDF 0103Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 10 kHz Key Parameters

5SDD71B0400

Abstract: diode vrrm 8000 if 7000
Contextual Info: 5SDD 71B0400  5SDD 71B0400 Old part no. DS 808D-7110-04 High current diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 2000 Hz

Contextual Info: 5SDD 71B0400  5SDD 71B0400 Old part no. DS 808D-7110-04 Welding diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 2000 Hz

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-03 Jan. 10 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters

Contextual Info: Data Sheet, Doc. No. 5SYA 1416-02 04-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 3200 4700 7390 61x103 0.992 0.067 Rectifier Diode V A A A V mΩ 5SDD 48H3200 Doc. No. 5SYA1182-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1

5SDD31H6000

Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 6000 3080 4840 40x103 1.016 0.175 Rectifier Diode V A A A V mΩ 5SDD 31H6000 PRELIMINARY Doc. No. 5SYA1183-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1

Contextual Info: VCE IC = = 4500 V 55 A IGBT-Die 5SMY 12N4500 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1646-00 Jan 08 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Poymide

abb press-pack igbt

Contextual Info: VCE IC = = 4500 V 55 A IGBT-Die 5SMY 12N4501 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1646-01 11 11 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride

5SNA

Abstract: IGBT 6500 IC da 5SNA0750G650300
Contextual Info: VCE IC = = 6500 V 750 A ABB HiPakTM IGBT Module 5SNA 0750G650300 PRELIMINARY Doc. No. 5SYA 1600-00 Apr 08 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • High insulation package • AlSiC base-plate for high power

20F5000

Contextual Info: VRRM = 5000 V IFAVM = 1850 A IFRMS = 2900 A IFSM = 23500 A VF0 = 0.99 V rF = 0.282 mΩ Ω Rectifier Diode 5SDD 20F5000 Doc. No. 5SYA1162-01 Jan. 01 • Very low on-state losses • Optimum power handling capability Blocking Part Number 5SDD 20F5000 5SDD 20F4800

5SDF12F3005

Abstract: dm265 12F3
Contextual Info: 5SDF 12F3005 5SDF 12F3005 Old part no. DM 818-1200-30 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 3 000 I FAVm = 1 256 I FSM = 19 000 V TO = 1.195

5SDF12T3005

Contextual Info: 5SDF 12T3005 5SDF 12T3005 Old part no. DM 818C-1200-30 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 3 000 I FAVm = 1 256 I FSM = 19 000 V TO = 1.195

Contextual Info: Data Sheet, Doc. No. 5SYA 1419-02 04-2012 5SLD 1000N330300 ABB HiPakTM DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

5SDD48H3200

Contextual Info: 5SDD 48H3200 5SDD 48H3200 Old part no. DV 889-4650-32 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 3 200 I FAVm = 4 708 I FSM = 61 000 V TO = 0.992

Contextual Info: 5SDD 49H3000 5SDD 49H3000 Old part no. DV 889-4860-30 Rectifier Diode Properties § Industry standard housing § Suitable for parallel operation § High operating temperature § Low forward voltage drop Key Parameters = 3 000 V RRM = 4 865 I FAVm = 64 000

ABB IGBT

Abstract: press-pack igbt
Contextual Info: VCE IC = = 2500 V 1000 A ABB StakPak H Series Press-pack IGBT 5SNR 10H2500 Doc. No. 5SYA1580-02 May. 04 • High SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package

Contextual Info: PRELIMINARY 5SDF 0102C0400 5SDF 0102C0400 High Frequency Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 10 kHz

5SLD1000N330300

Abstract: 5SYA2039 diode in 400 1000N330300 UC1250
Contextual Info: Data Sheet, Doc. No. 5SYA 1419-03 06-2012 5SLD 1000N330300 HiPak DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1413-02 04-2012 5SNA 0500J650300 HiPak IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability

17800

Abstract: DIODE ED 26 5SDD If 8000 Vrrm 8000
Contextual Info: VRRM = 400 V IFAVM = 11350 A IFRMS = 17800 A IFSM = 85000 A VF0 = 0.74 V rF = 0.018 mΩ Ω Rectifier Diode 5SDD 0120C0400 Doc. No. 5SYA1159-01 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance

ED 05 Diode

Abstract: MS-9600
Contextual Info: VRRM = 200 V IFAVM = 6130 A IFRMS = 9620 A IFSM = 45000 A VF0 = 0.80 V rF = 0.030 mΩ Ω Rectifier Diode 5SDD 40B0200 Doc. No. 5SYA1154-02 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking

IGCT 7000

Contextual Info: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 5500 33x103 1.15 0.30 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 55L4500 Doc. No. 5SYA1243-04 May 08 • High snubberless turn-off rating • Optimized for medium frequency • High electromagnetic immunity