A9-70 FET Search Results

diode a29

Contextual Info: QuickSwitch Products QS34XR245 High-Speed C M O S QuickSwitch t o ™ L o w Resistance MultiWidth™ Bus Switches ,in c. 3 2 - B it FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5Q bidirectional switches connect inputs

in7895

Contextual Info: MwT-A9 IS GHz H igh G ain, Low N oise G aA s FET D O W N LO A D A D D IT IO N A L DATA WWWMWTINC.COM A l l D im e n s io n s in M ic r o n s FEATURES • • • • • • • C H I P T H I C K N E S S - 1 25 IDEAL FOR. HIGH DYNAMIC R.VNGE RECEIVER. APPLICATIONS

QS32XR245

Abstract: QS3R245
Contextual Info: QS32XR245 QuickSwitch Products High-Speed CMOS QuickSwitch 16-Bit Low Resistance MultiWidthTM Bus Switches QS32XR245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs to outputs

mwt-970

Abstract: 16662 ic 74390 61787
Contextual Info: MwT-9 M ic r o w ave 18 GHz High Power GaAs FET T echno lo g y ri iiiniiiMiiii! +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES - • _ I

27C510

Abstract: pc51020 SMJ27C510 pc510-20
Contextual Info: TMS27C510 524 288-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC510 524 288-BIT PROGRAMMABLE READ-ONLY MEMORY SMLS51OA-AUGUST 1990-REVISED JANUARY 1993 J AND N PACKAGESÎ TOP VIEW Organization . . . 64K x 8 Single 5-V Power Supply V pp [ Pin Compatible With Existing 1 Meg MOS

MS82V16520

Abstract: QFP100-P-1420-0
Contextual Info: FEDS82V16520-05 ¡ Semiconductor MS82V16520 This version: Mar. 2001 Previous version: Feb. 2000 262,144-Word ¥ 32-Bit ¥ 2-Bank Synchronous Graphics RAM DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words ¥ 32

db3 bl

Abstract: dba1 MAKING A10 BGA QFP100-P-1420-0 MS82V16520
Contextual Info: E2L1056-39-72 ¡ Semiconductor MS82V16520 ¡ Semiconductor This version: Jul. 1999 MS82V16520 Previous version: Sep. 1998 262,144-Word ¥ 32-Bit ¥ 2-Bank Synchronous Graphics RAM DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words ¥ 32

Contextual Info: IDT74FST163383 IDT74FST1632383 ADVANCE INFORMATION 20-BIT BUS EXCHANGE SWITCH Integrated Device Technology, Inc. no noise of their own while providing a low resistance path for an external driver. These devices connect input and output ports through an n-channel FET. When the gate-to-source

Contextual Info: S QuickSwitch Products 3.3V 32-Bit Bus Switch for Hot SwaP Applications HotSwitch ductor Inc q s 34xvh 245 FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to Vcc - No DC path to Vcc or GND - 5V tolerant in OFF state

W29C512A

Abstract: W29C512AP-90 W29C512AT-90
Contextual Info: W29C512A 64K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C512A is a 512K bit, 5-volt only CMOS flash memory organized as 64K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C512A results in fast program/erase operations with

X28HC64p-12

Abstract: EEPROM X28HC64P-12 FN8109 X28HC64 X28HC64EM-70 X28HC64J-70 X28HC64JI-70 X28HC64JIZ-70 X28HC64JZ-70 X28HC64KM-70
Contextual Info: X28HC64 64K, 8K x 8 Bit Data Sheet June 7, 2006 5 Volt, Byte Alterable EEPROM FN8109.1 • High reliability —Endurance: 1 million cycles —Data retention: 100 years • JEDEC approved byte-wide pin out • Pb-free plus anneal available RoHS compliant

DDR200

Abstract: DDR266A DDR266B DDR332 PC2100 V58C2128 DM3530
Contextual Info: MOSEL VITELIC PRELIMINARY V58C2128 804/404/164 SAT HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) Clock Cycle Time (tCK2) 6 7 75 8 DDR332 DDR266A DDR266B DDR200 6.5 ns 7.5 ns 10 ns

Contextual Info: IDTQS32X2861 HIGH-SPEED CMOS 20-BIT BUS SWITCH WITH FLOW-THROUGH PINOUT INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 20-BIT BUS SWITCH WITH FLOW-THRU PINOUT IDTQS32X2861 FEATURES: DESCRIPTION: • • • • The QS32X2861 provides two sets of ten high-speed CMOS TTLcompatible bus switches. The low ON resistance of the QS32X2861 allows

A 14U

Contextual Info: PRELIMINARY V58C2256 804/404/164 S HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) MOSEL VITELIC Clock Cycle Time (tCK2) 6 7 75 8 DDR333B DDR266A DDR266B DDR200 7.5 ns 7.5ns 10 ns

Contextual Info: IDTQS34X2245 HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES IDTQS34X2245 FEATURES: DESCRIPTION: • • • • • • • • The QS34X2245 is a member of the MultiWidthTM family of QuickSwitch

80C51

Abstract: 83C654 87C654 8XC552 marking A7 4001
Contextual Info: INTEGRATED CIRCUITS 83C654 CMOS single-chip 8-bit microcontroller Product specification IC20 Data Handbook Philips Semiconductors 1995 Jan 16 Philips Semiconductors Product specification CMOS single-chip 8-bit microcontroller DESCRIPTION The P83C654 Single-Chip 8-Bit

Contextual Info: ADVANCE INFORMATION in te i 8XC151 SA/SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER Commercial/Express MCSi 51 Microcontroller Compatible Instruction Set Pin Compatible with 44-lead PLCC and 40-lead PDIP MCS 51 Sockets Fast Instruction Pipeline 16-bit Internal Code Fetch

T4 1060

Abstract: SST29EE512-70-4I-NHE 32-PIN SST29EE512
Contextual Info: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 SST29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)

80C528

Abstract: 80C51 80C52 83C528 87C528 8XC528 philips microcontroller hardware and software features AD-016
Contextual Info: INTEGRATED CIRCUITS 80C528/83C528 CMOS single-chip 8-bit microcontroller Product specification IC20 Data Handbook Philips Semiconductors 1995 Feb 02 Philips Semiconductors Product specification CMOS single-chip 8-bit microcontrollers DESCRIPTION The 8XC528 single-chip 8-bit microcontroller

X28C010

Abstract: X28C512 X28C512D X28C512DM X28C512J X28C513 X28C513EM X28C512 intersil
Contextual Info: X28C512, X28C513 Data Sheet June 7, 2006 5V, Byte Alterable EEPROM Features The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The

Contextual Info: ADVANCE MT28F004 512K x 8 FLASH MEMORY MICRON I DEVICES. 'NC 512K x 8 I 5V/12V, BOOT BLOCK 5/12 VOLT FLASH MEMORY FLASH MEMORY FEATURES • Seven erase blocks: - 16KB boot block protected - Two 8KB parameter blocks - Four general memory blocks • Low pow er lOOfiA standby; 60mA active, MAX

TMS320P14

Abstract: TMS320LC15
Contextual Info: TMS320C1x DIGITAL SIGNAL PROCESSORS SPRS009C – JANUARY 1987 – REVISED JULY 1991 • • • • • • • • • • • • • • • Performance Up to 8.77 MIPs • • All TMS320C1x Devices are Object Code Compatible 144/256-Word On-Chip Data RAM

TMS320LC15

Abstract: LC-15 C16S TMS320P14
Contextual Info: TMS320C1x DIGITAL SIGNAL PROCESSORS SPRS009C – JANUARY 1987 – REVISED JULY 1991 • • • • • • • • • • • • • • • Performance Up to 8.77 MIPs • • All TMS320C1x Devices are Object Code Compatible 144/256-Word On-Chip Data RAM

ADSP21XX block diagram

Abstract: addressing modes in adsp-21xx taa 723 to 99 ADSP-21xx block diagram hip 051 57 marking Dt0 ADSP-2100 HA20 ADSP-2103 ADSP-2105
Contextual Info: ADSP-2100 Family DSP Microcomputers ADSP-21xx a SUMMARY 16-Bit Fixed-Point DSP Microprocessors with On-Chip Memory Enhanced Harvard Architecture for Three-Bus Performance: Instruction Bus & Dual Data Buses Independent Computation Units: ALU, Multiplier/ Accumulator, and Shifter