A9-70 FET Search Results

Contextual Info: IDTQS32384 HIGH-SPEED CMOS 10-BIT BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 10-BIT BUS SWITCH FEATURES: • • • • • • • IDTQS32384 DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc Ω bidirectional switches connect inputs to outputs

QS32861

Contextual Info: IDTQS32861 HIGH-SPEED CMOS QUICKSWITCH 10-BIT BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 10-BIT BUS SWITCH WITH FLOW-THROUGH PINOUT FEATURES: − − − − DESCRIPTION Enhanced N channel FET with no inherent diode to Vcc

abe 429

Abstract: MwT-A9 MWT-A970
Contextual Info: M wT- A9 18 GHz High Gain, Low Noise GaAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES !-7*1 r •-* • +24.5 dBm OUTPUT POWER AT 12 GHz 67 • 9 dB SMALL SIGNAL GAIN AT 12 GHz ee — r 9B • 1.6 dB NOISE FIGURE AT 12 GHz

IDTQS32X2384

Contextual Info: IDTQS32X2384 HIGH-SPEED CMOS 20-BIT BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 20-BIT BUS SWITCH DESCRIPTION: FEATURES: • • • • • • • Enhanced N channel FET with no inherent diode to VCC Low propagation delay and zero ground bounce

a970 transistor

Abstract: A970 MWT-A970 A973 mwt 971 transistor a970 A971 MwT-A9
Contextual Info: MwT-A9 18 GHz High Gain, Low Noise GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns 75 FEATURES • IDEAL FOR HIGH DYNAMIC RANGE RECEIVER APPLICATIONS • 1.6 dB NOISE FIGURE AT 12 GHz • +24.5 dBm OUTPUT POWER AT 12 GHz • 9 dB SMALL SIGNAL GAIN AT 12 GHz

IDTQS32X2861

Abstract: QS32X2861
Contextual Info: IDTQS32X2861 HIGH-SPEED CMOS 20-BIT BUS SWITCH WITH FLOW-THRU PINOUT INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 20-BIT BUS SWITCH WITH FLOW-THRU PINOUT DESCRIPTION FEATURES: − − − − Enhanced N channel FET with no inherent diode to Vcc

diode a29

Contextual Info: QuickSwitch Products QS34XR245 High-Speed C M O S QuickSwitch t o ™ L o w Resistance MultiWidth™ Bus Switches ,in c. 3 2 - B it FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5Q bidirectional switches connect inputs

Contextual Info: QuickSwitch Products H QS34XR245 High-Speed CMOS QuickSwitch S emiconductor , I nc . ADVANCE in f o r m a t io n 3 2 ' B it L ° W R e s is ta n c e Multi Width Bus Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc

Power DIODE A30

Abstract: QS34XR245 b12 diode DIODE B12 41 QS34XR245Q3 QS3R245
Contextual Info: QS34XR245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit Low Resistance MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34XR245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs

Contextual Info: QuickSwitch Products High-Speed CMOS qs34X245 qs 34x2245 QuickSwitch 32-Bit Multi Width Bus Switches Semiconductor, I nc. FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Bidirectional switches connect inputs

diode A23

Abstract: QS3245 QS34X2245 QS34X245
Contextual Info: QS34X245, QS34X2245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34X245 QS34X2245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs

Contextual Info: 1 QuickS/vitch Products Hi gh-Speed CMOS Q ji ckSwi tch s iconducior,inc. QS34XR245 32- B t Low Resistance Multi Width™ Bus Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5i2 bidirectional switches connect inputs

in7895

Contextual Info: MwT-A9 IS GHz H igh G ain, Low N oise G aA s FET D O W N LO A D A D D IT IO N A L DATA WWWMWTINC.COM A l l D im e n s io n s in M ic r o n s FEATURES • • • • • • • C H I P T H I C K N E S S - 1 25 IDEAL FOR. HIGH DYNAMIC R.VNGE RECEIVER. APPLICATIONS

Contextual Info: QuickSwitch Products High-Speed CMOS Oijaiity I mZ QS3586 i - . . Vl ~ INFORMATION 10-Bit Bus Switch With 5 0 0 Series Resistor ductor , in c . FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Bidirectional signal flow

74245 applications

Abstract: QS32X245 ttl 74245 B14 z diode Double high-speed switching diode QS32X2245 QVSOP
Contextual Info: QS32X245, QS32X2245 QuickSwitch Products High-Speed CMOS QuickSwitch Double Width Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS32X245 QS32X2245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

IDTQS32X2245

Abstract: QS32X2245 74245 20 pin
Contextual Info: IDTQS32X2245 HIGH-SPEED CMOS QUICKSWITCH DOUBLE WIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH DOUBLE WIDTH BUS SWITCH FEATURES: − − − − − − − DESCRIPTION Enhanced N channel FET with no inherent diode to Vcc

IDTQS32390

Abstract: QS32390
Contextual Info: IDTQS32390 HIGH-SPEED CMOS QUICKSWITCH 16:8 MULTIPLEXER INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 16:8 MULTIPLEXER FEATURES: • • • • • • • • IDTQS32390 DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc

QS32XR245

Abstract: QS3R245
Contextual Info: QS32XR245 QuickSwitch Products High-Speed CMOS QuickSwitch 16-Bit Low Resistance MultiWidthTM Bus Switches QS32XR245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs to outputs

diode b29

Abstract: QS34XVH245 B14 diode on semiconductor b12 diode DIODE B12 51 DIODE B21 DIODE B31 a30 DIODE DIODE A30
Contextual Info: QS34XVH245 QuickSwitch Products 3.3V 32-Bit Bus Switch for Hot Swap Applications HotSwitchTM Q QUALITY SEMICONDUCTOR, INC. QS34XVH245 FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to VCC – No DC path to VCC or GND

diode MARKING CODE A9

Abstract: W29C040P-90B W29C040 W29C040-12 W29C040T-12 W29C040T-90 W29C040T90BN
Contextual Info: W29C040 512K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K × 8 bits. The device can be written erased and programmed in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C040 results in fast write (erase/

mwt-970

Abstract: 16662 ic 74390 61787
Contextual Info: MwT-9 M ic r o w ave 18 GHz High Power GaAs FET T echno lo g y ri iiiniiiMiiii! +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES - • _ I

LD 8164

Abstract: ic lg 631
Contextual Info: MwT-9 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y r,!i 6/ löSmmjuir +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES rAï

Contextual Info: QuickSw itch P r o d u c ts GB q s 3586i High-Speed CMOS « •■ . 10-ßit ßUS Switch With 50Q Series Resistor Quality S e m ic o n d u c t o r ,I n c . INFORMATION FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc

Contextual Info: FSNAi- AM D3 Am28F512A 512 Kilobit 64 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ C M O S low power consum ption — 30 mA maximum active current