A81 DC Search Results
A81 DC Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
| MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
| MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
| MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
| MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
A81 DC Price and Stock
Texas Instruments OPA810IDCKRHigh Speed Operational Amplifiers Single Channel High Performance 27 V |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
OPA810IDCKR | 6,839 |
|
Buy Now | |||||||
OMRON Corporation H3CR-A8AC100-240/DC100-125Timers |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
H3CR-A8AC100-240/DC100-125 | 47 |
|
Buy Now | |||||||
Carling Technologies VLB1HWDC-A8100-0Rocker Switches VLB1HWDC-A8100-0 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
VLB1HWDC-A8100-0 |
|
Get Quote | ||||||||
Texas Instruments OPA810IDCKRG4High Speed Operational Amplifiers 27V 140MHz single channel high perfor |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
OPA810IDCKRG4 |
|
Get Quote | ||||||||
A81 DC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: WJ-A81 / SMA81 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: >30 dB TYP. HIGH GAIN: 24 dB (TYP.) HIGH LEVEL OUTPUT: +17 dBm (TYP.) LOW NOISE: 3.5 dB (TYP.) Outline Drawings A81 0.450 n (11-41)U |
OCR Scan |
WJ-A81 SMA81 Inpu16 | |
SMA81-1Contextual Info: Cascadable Amplifier 20 to 250 MHz A81-1 / SMA81-1 V3 Features • • • • Product Image High Reverse Isolation : >30 dBm TYP. Low Noise: 2.4 dB (TYP.) High Gain: 25 dB (TYP.) High Level Output: +13.5 dBm (TYP.) Description The A81-1 RF amplifier is a discrete hybrid design, which |
Original |
A81-1 SMA81-1 MIL-STD-883 SMA81-1 | |
|
Contextual Info: WJ-A81-2 / SMA81-2 20 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +15.0 dBm TYP. HIGH EFFICIENCY: 29 mA @ + 15 VDC (TYP.) LOW NOISE 3.6 dB (TYP.) HIGH GAIN: >22.0 dB (TYP.) Outline Drawings A81-2 |
OCR Scan |
WJ-A81-2 SMA81-2 A81-2 50-ohm | |
WJ-CA81-1
Abstract: WJ-A81-1 612025 ja81 TRANSISTOR 2N 4401
|
OCR Scan |
A81-1 /SMA81-1 A81-1 50-ohm 17TC/W 1-800-WJ1-4401 WJ-CA81-1 WJ-A81-1 612025 ja81 TRANSISTOR 2N 4401 | |
A81 DCContextual Info: Cascadable Amplifier 20 to 250 MHz A81/ SMA81 V3 Features • • • • Product Image HIGH REVERSE ISOLATION: >30 dB TYP. HIGH GAIN: 26 dB (TYP.) HIGH LEVEL OUTPUT: +17 dBm (TYP.) LOW NOISE: 2.6 dB (TYP.) Description The A81 RF amplifier is a discrete hybrid design, which uses |
Original |
SMA81 MIL-STD-883 SMA81rized A81 DC | |
A81-3
Abstract: CA81-3 SMA81-3
|
Original |
A81-3/ SMA81-3 A81-3 MIL-STD-883 CA81-3 SMA81-3 | |
|
Contextual Info: Cascadable Amplifier 20 to 500 MHz A81-2/ SMA81-2 V3 Features • • • • Product Image HIGH OUTPUT POWER: +15.0 dBm TYP. HIGH EFFICIENCY: 29 mA @ +15 Vdc (TYP.) LOW NOISE 2.9 dB (TYP.) HIGH GAIN: >24.5 dB (TYP.) Description The A81-2 RF amplifier is a discrete hybrid design, which uses |
Original |
A81-2/ SMA81-2 A81-2 MIL-STD-883 | |
Q69-X152
Abstract: a81smd A80-A600X Q69-X238 Q69-X138 a250 a81s A80-C90X EPCOS 600 04 O EPCOS 90 05 0
|
Original |
RAB0177-2 RAB0166-L RAB0004-Q A80-C90X Q69-X141 A80-A230X Q69-X224 A80-A250X Q69-X292 A80-A350X Q69-X152 a81smd A80-A600X Q69-X238 Q69-X138 a250 a81s A80-C90X EPCOS 600 04 O EPCOS 90 05 0 | |
A81 DC
Abstract: IEC 60068-1 Arrester B88069X1490S102 EPCOS 90 04 0 EPCOS 90 04 O A81-A500X
|
Original |
A81-A500X B88069X1490S102 57845/VDE0845 A81 DC IEC 60068-1 Arrester B88069X1490S102 EPCOS 90 04 0 EPCOS 90 04 O A81-A500X | |
a600
Abstract: A81-A600XG B88069X2990T502
|
Original |
A81-A600XG B88069X2990T502 57845/VDE0845 a600 A81-A600XG B88069X2990T502 | |
IEC 60068-1
Abstract: A81-A150X B88069X2840S102
|
Original |
A81-A150X B88069X2840S102 57845/VDE0845 IEC 60068-1 A81-A150X B88069X2840S102 | |
EPCOS 230 06 O
Abstract: A81-A230X B88069X2250S102
|
Original |
A81-A230X B88069X2250S102 57845/VDE0845 EPCOS 230 06 O A81-A230X B88069X2250S102 | |
EPCOS 600 06 O
Abstract: IEC-60286-3 transistor smd marking KA smd A81 smd marking blue iec 60286 SMD MARKING CODE SMD MARKING CODE transistor smd transistor AB Datasheet A81-C90XSMD
|
Original |
A81-C90XSMD B88069X1370T352 EPCOS 600 06 O IEC-60286-3 transistor smd marking KA smd A81 smd marking blue iec 60286 SMD MARKING CODE SMD MARKING CODE transistor smd transistor AB Datasheet A81-C90XSMD | |
A81-C90X
Abstract: B88069X1380S102
|
Original |
A81-C90X B88069X1380S102 57845/VDE0845 A81-C90X B88069X1380S102 | |
|
|
|||
|
Contextual Info: BAS19 BAS20 BAS21 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon planar epitaxial high-speed diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BAS19 = A8 BAS20 = A81 BAS21 = A82 _3.0_ 2.8 0.14 0.48 0.38 Pin configuration 1 = ANODE 2 = NC 3 = CATHODE |
OCR Scan |
BAS19 BAS20 BAS21 BAS19 100fi BAS20 | |
|
Contextual Info: A81/SMA81 20 TO 250 MHz CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: >30 dB TYP. · HIGH GAIN: 26 dB (TYP.) · HIGH LEVEL OUTPUT: +17 dBm (TYP.) · LOW NOISE: 2.6 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics |
Original |
A81/SMA81 SMA81 | |
bas19
Abstract: BAS20 BAS21 BAS21 A82
|
OCR Scan |
BAS20 BAS21 BAS19 BAS19 BAS20 BAS19; BAS20; BAS21 BAS21 A82 | |
A81-A75X
Abstract: S102 T502
|
Original |
A81-A75X B88069X3881xxxx A81-A75X S102 T502 | |
IEC 60068-1
Abstract: A81-A250XSMD B88069X1520T352
|
Original |
A81-A250XSMD B88069X1520T352 57845/VDE0845 IEC 60068-1 A81-A250XSMD B88069X1520T352 | |
B88069X2880S102
Abstract: A81 DC Arrester epcos 600 03 0 IEC 60068-1 SURGE ARRESTER A81-A600X EPCOS 600 05 O
|
Original |
A81-A600X B88069X2880S102 57845/VDE0845 B88069X2880S102 A81 DC Arrester epcos 600 03 0 IEC 60068-1 SURGE ARRESTER A81-A600X EPCOS 600 05 O | |
EPCOS 350 06 O
Abstract: A81-A350X EPCOS 800 B88069X2380S102
|
Original |
A81-A350X B88069X2380S102 57845/VDE0845 EPCOS 350 06 O A81-A350X EPCOS 800 B88069X2380S102 | |
A81-A250X
Abstract: S102 T502
|
Original |
A81-A250X B88069X1500xxxx 57845/VDE0845 A81-A250X S102 T502 | |
smd A81
Abstract: BAS21 SOT-23 A82 SMD smd diode A82 smd marking A8 BAS19 BAS20 BAS21
|
Original |
BAS19, BAS20, BAS21 OT-23 BAS19 BAS20 C-120 050503E smd A81 BAS21 SOT-23 A82 SMD smd diode A82 smd marking A8 BAS19 BAS20 BAS21 | |
BAS20Contextual Info: BASI9 BAS20 BAS21 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon planar epitaxial high-speed diodes PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN mm Marking BAS19 = A8 BAS20 = A81 BAS21 = A82 _3.0_ 2.8 0.14 - " ^ 0.09 0.48 03§ 1 = ANODE 2 = NC 3 = CATHODE |
OCR Scan |
BAS20 BAS21 BAS19 BAS20 BAS19 BAS21 BAS19; BAS20; | |