A60 81 Search Results

HM5264165FTT-A60

Abstract: Hitachi DSA002745
Contextual Info: HM5264165F-75/A60/B60 HM5264805F-75/A60/B60 HM5264405F-75/A60/B60 64M LVTTL interface SDRAM 133 MHz/100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM ADE-203-940A Z Preliminary, Rev. 0.1 Dec. 28, 1998

hm5264805ftt75

Abstract: Hitachi DSA00164
Contextual Info: HM5264165F-75/A60/B60 HM5264805F-75/A60/B60 HM5264405F-75/A60/B60 64M LVTTL interface SDRAM 133 MHz/100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM ADE-203-940B Z Rev. 1.0 Nov. 10, 1999 Description

Contextual Info: HM5264165F-75/A60/B60 HM5264805F-75/A60/B60 HM5264405F-75/A60/B60 64M LVTTL interface SDRAM 133 MHz/100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM E0135H10 Ver. 1.0 (Previous ADE-203-940B (Z)

HM5264805 Series

Abstract: HM5264165DTT-A60 sdram 4 bank 4096 16 Hitachi DSA00196
Contextual Info: HM5264165D-A60 HM5264805D-A60 HM5264405D-A60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-909 Z Preliminary Rev. 0.0 May. 8, 1998 Description The Hitachi HM5264165D is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi

Contextual Info: HM5264165F-75/A60/B60 HM5264805F-75/A60/B60 HM5264405F-75/A60/B60 64M LVTTL interface SDRAM 133 MHz/100 MHz 1-Mword x 16-bit x 4-bank/2-Mword x 8-bit x 4-bank /4-Mword x 4-bit x 4-bank PC/133, PC /100 SD R A M HITACHI ADE-203-940A Z Preliminary, Rev. 0.1

TSOP II elpida

Abstract: HM5264165FTT-A60 HM5264165F HM5264405F HM5264805F *5264165ftta
Contextual Info: EO HM5264165F-75/A60/B60 HM5264805F-75/A60/B60 HM5264405F-75/A60/B60 L 64M LVTTL interface SDRAM 133 MHz/100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM Pr Description E0135H10 Ver. 1.0 (Previous ADE-203-940B (Z)

Contextual Info: HM5264165D-A60 HM5264805D-A60 HM5264405D-A60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit x 4-bank/2-Mword x 8-bit x 4-bank /4-Mword x 4-bit x 4-bank PC/100 SDRAM HITACHI ADE-203-909A Z Rev. 1.0 Dec. 3, 1998 Description The Hitachi HM5264165D is a 64-Mbit SDRAM organized as 1048576-word x 16-bit x 4 bank. The

HM5264165DTT-A60

Abstract: ADE-203-909A diode a60 HITACHI HX 2272 Hitachi DSA00280
Contextual Info: HM5264165D-A60 HM5264805D-A60 HM5264405D-A60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-909A Z Rev. 1.0 Dec. 3, 1998 Description The Hitachi HM5264165D is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The

Contextual Info: HM5216805-A60, HM5216405-A60, HM5216805-B60, HM5216405-B60 16M LVTTL interface SDRAM 100 MHz 1-Mword x 8-bit/2-Mword x 4-bit PC/100 SDRAM HITACHI ADE-203-796B Z Preliminary Rev. 0.3 Dec. 23, 1997 Description All inputs and outputs are referred to the lising edge of the clock input. The HM5216805, HM5216405 are

SL64B4B4M2E-A60

Abstract: A1-A10 Dram 168 pin EDO buffered
Contextual Info: SL64B4B4M2E-A60 4M X 64 Bits 32MB DRAM 168-Pin Buffered DIMM with EDO FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • GENERAL DESCRIPTION 15ns 110ns The SiliconTech SL64B4B4M2E-A60 is an 4M x 64 bits Dynamic RAM (DRAM) Dual In-line Memory Module (DIMM). The module

HM5212165F

Abstract: HM5212165FLTD-75
Contextual Info: HM5212165FLTD-75/A60/B60 HM5212805FLTD-75/A60/B60 EO 128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword x 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM L Description E0180H10 Ver. 1.0 Jul. 17, 2001 Features • • • • • • •

SL64G6A1M1E-A60

Contextual Info: SL64G6A1M1E-A60 1M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tCAC tRC tRAC 60ns • • • • • • • • 17ns 104ns The SiliconTech SL64G6A1M1E-A60 is a 1M x 64 bits Dynamic RAM high density memory module. The SiliconTech

Contextual Info: HM5216805-A60, HM5216405-A60, HM5216805-B60, HM5216405-B60 16M LVTTL interface SDRAM 100 MHz 1-Mword x 8-bit/2-Mword × 4-bit PC/100 SDRAM ADE-203-796B Z Preliminary Rev. 0.3 Dec. 23, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216805, HM5216405 are

HM5212165DLTD-A60

Abstract: HM5212165DTD-A60 HM5212805DTD-A60 Hitachi DSA00280 DSA0028092.
Contextual Info: HM5212165D-A60 HM5212805D-A60 128M LVTTL interface SDRAM 100 MHz 2-Mword x 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/100 SDRAM ADE-203-987 Z Preliminary, Rev. 0.0 Nov. 30, 1998 Description The Hitachi HM5212165D is a 128-Mbit SDRAM organized as 2097152-word × 16-bit × 4-bank. The

SL64G4B4M2E-A60

Contextual Info: 144-PIN SO-DIMMS SL64G4B4M2E-A60 4M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tCAC tRC tRAC 60ns • • • • • • • • 15ns 104ns The SiliconTech SL64G4B4M2E-A60 is a 4M x 64 bits Dynamic RAM high density memory module. The SiliconTech

SL64B6A2M1E-A60

Contextual Info: SL64B6A2M1E-A60 2M X 64 Bit DRAM DIMM with Extended Data Out EDO FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • GENERAL DESCRIPTION 17ns 110ns The SiliconTech SL64B6A2M1E-A60 is a 2M x 64 bit Dynamic RAM (DRAM) Dual In-line Memory Module (DIMM). This

2620 dynamic ram

Abstract: A1-A10 Dram 168 pin EDO buffered
Contextual Info: SL64B8A2M2E-A60 2M X 64 Bit DRAM DIMM with Extended Data Out EDO FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • GENERAL DESCRIPTION 15ns 110ns The SiliconTech SL64B8A2M2E-A60 is a 2M x 64 bit Dynamic RAM (DRAM) Dual In-line Memory Module (DIMM). This

Contextual Info: HM5212165D-A60 HM5212805D-A60 128M LVTTL interface SDRAM 100 MHz 2-Mword x 16-bit x 4-bank/4-Mword x 8-bit x 4-bank PC/100 SDRAM HITACHI ADE-203-987 Z Preliminary, Rev. 0.0 Nov. 30, 1998 Description The Hitachi HM5212165D is a 128-Mbit SDRAM organized as 2097152-word x 16-bit x 4-bank. The

Contextual Info: HM5216805-A60, HM5216405-A60 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-796 Z Preliminary, Rev. 0.0 Jun. 26, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216805 Series,

HM5212165F

Abstract: HM5212165FTD-75 HM5212165FTD-A60
Contextual Info: HM5212165FTD-75/A60/B60 HM5212805FTD-75/A60/B60 EO 128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword x 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM L Description E0179H10 Ver. 1.0 Jul. 16, 2001 Features • • • • • • • •

Contextual Info: PC/100 SDRAM HM5216805-A60, HM5216405-A60 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-796 Z Preliminary Rev. 0.1 Sep. 19, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM 5216805 Series,

Contextual Info: PC/100 SDRAM HM5216805-A60, HM5216405-A60 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-796 Z Preliminary Rev. 0.1 Sep. 19, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM 5216805 Series,

Contextual Info: HM5216805-A60, HM5216405-A60, HM5216805-B60, HM5216405-B60 16M LVTTL interface SDRAM 100 MHz 1-Mword x 8-bit/2-Mword x 4-bit PC/100 SDRAM HITACHI ADE-203-796B Z Preliminary Rev. 0.3 Dec. 23, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The H M 5216805, H M 5216405 are

Contextual Info: 16 CHARACTERS X 2 LINES CHARACTER SIZE: 2 95W X 4.85H mm 5 X 7 DOTS 2.95W X 5.55H mm (5 X 8 DOTS) 6.50-1” i— 2.95~h i-a60 SIM162 -84.C - 7 1.C . H -11.50+- 10.0 MAX » ~ ,— 1 2.5 - 6 1.0C 5.0 H -i »-a60 ,h i-a55 R = 1 .2 5 ^ i^ ; INSIDE 01.0 ^ Ó U T SIDE 0 2 5