A6 DIODE Search Results

INVERTER 20kW

Abstract: inverter vf-0 ixys free catalog 4626a rectifier bridge 300v 30a D640A
Contextual Info: MUBW 20-06 A6 Converter - Brake - Inverter Module CBI1 Rectifier Brake VRRM = 1200V IFAVM = 11 A IFSM = 250 A VCES = 600 V IC25 = 11 A VCE(sat) = 2 V Inverter VCES = 600 V IC25 = 23 A VCE(sat) = 2.1 V Features Input Rectifier Bridge D8 - D13 ● Symbol Conditions

DIODE A6

Abstract: ixys free catalog AC 1506 C620 diode INVERTER 20kW
Contextual Info: MUBW 15-06 A6 Converter - Brake - Inverter Module CBI1 Rectifier Brake VRRM = 1200V IFAVM = 11 A IFSM = 250 A VCES = 600 V IC25 = 11 A VCE(sat) = 2 V Inverter VCES = 600 V IC25 = 18 A VCE(sat) = 2.1 V Features Input Rectifier Bridge D8 - D13 ● Symbol Conditions

ic 6116

Contextual Info: IDTQS74FCT2541T/AT/CT HIGH-SPEED CMOS 8-INPUT BUFFER/LINE DRIVER INDUSTRIAL TEMPERATURE RANGE IDTQS74FCT2541T/AT/CT HIGH-SPEED CMOS 8-INPUT BUFFER/LINE DRIVER FEATURES: DESCRIPTION: • • • • • • CMOS power levels: <7.5mW static Undershoot clamp diodes on all outputs

MX29F022T

Contextual Info: MX29F022/022N 2M-BIT[256K x 8]CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption • • • • • Status Reply • -30mA maximum active current -1uA typical standby current@5MHz Programming and erasing voltage 5V±10%

MBM29LV017-90PTN

Abstract: say marking
Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

Contextual Info: SN74ALS29861, SN74ALS29862 10-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS SDAS097B – D2915, JANUARY 1986 – REVISED AUGUST 1988 • • • • DW OR NT PACKAGE TOP VIEW Functionally Equivalent to AM29861 and AM29862 Choice of True or Inverting Logic Power-Up High-Impedance State

29F001

Abstract: MX29F001T 29f001t
Contextual Info: MX29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • Status Reply – Data polling & Toggle bit for detection of program and erase cycle completion. • Chip protect/unprotect for 5V only system or 5V/12V system • 100,000 minimum erase/program cycles

hc245a

Abstract: 74LS DIP20-P-300-2 TC74AC245 TC74HC245AF TC74HC245AFW TC74HC245AP TC74HC640AF TC74HC640AP ITA 6 V 5 B4
Contextual Info: TOSHIBA TC74HC245AP/AF/AFW,640AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC245AP, TC74HC245AF, TC74HC245AFW TC74HC640AP, TC74HC640AF OCTAL BUS TRANSCEIVER TC74HC245AP/A F /AFW 3 - STATE, NON-INVERTING TC74HC640AP/AF_ 3-STATE, INVERTING_

philips 22 ah 306

Abstract: BZX884-B10 diode MARKING CODE A9 K2604 BZX884 BZX884-B2V4 BZX884-B2V7 BZX884-B3V0 BZX884-B3V3 BZX884-B3V6
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BZX884 series Voltage regulator diodes Product specification 2003 May 15 Philips Semiconductors Product specification Voltage regulator diodes BZX884 series FEATURES DESCRIPTION • Two tolerance series: ±2% and approximately ±5%

DALE R 01F

Abstract: oms 450 R9810 CON-DB25HF DRB2 OMS 1410 CRCW1206000ZT ITT Cannon ITT Cannon SMB Connectors AD8055
Contextual Info: a FEATURES 140 MSPS Guaranteed Conversion Rate 100 MSPS Low Cost Version Available 330 MHz Analog Bandwidth 1 V p-p Analog Input Range Internal +2.5 V Reference Differential or Single-Ended Clock Input 3.3 V/5.0 V Three-State CMOS Outputs Single or Demultiplexed Output Ports

AC541

Abstract: DIP20 SOL20 SSOP20
Contextual Info: INTEGRATED T O SH IB A CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74AC540P/F/FW/FS, TC74AC541P/F/FW/FS DATA SILICON MONOLITHIC OCTAL BUS BUFFER TC74AC540P/F/FW/FS TC74AC541 P/F/FW/FS INVERTING , 3 - STATE OUTPUTS NON - INVERTING , 3 - STATE OUTPUTS

Contextual Info: DALLAS SEMICONDUCTOR FEATURES DS2219 N onvolatile D R AM Stik 1 M x 9 PIN ASSIGNMENT • Maintains data in the absence of system power o • Compatible with existing DRAM SIMM applications • Normal operating mode completely unaffected • Nonvolatile circuitry transparent and independent

AC245

Abstract: AC640
Contextual Info: TOSHIBA TC74AC245.640 Octal Bus Transceivers 245: 3-STATE, NON-INVERTING 640: 3-STATE, INVERTING Features: • High Speed: tpd = 3.9ns typ. at Vcc = 5V • Low Power Dissipation: lcc = 8|iA (max.) at • High Noise Immunity: Vn,h = V ml= 28% Vcc (min.) •

29LV081

Abstract: 8088 microprocessor circuit diagram MX29LV081TI-90 mx29lv081 SA10 SA11 SA12 SA13 SA14 SA15
Contextual Info: PRELIMINARY MX29LV081 8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8 • Single power supply operation - 3.0V only operation for read, erase and program

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20867-3E FLASH MEMORY CMOS 2M 256K x 8/128K × 16 BIT MBM29F200TC-55/-70/-90/MBM29F200BC-55/-70/-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

Contextual Info: IDT54/74FCT543/A/C FAST CMOS OCTAL LATCHED TRANSCEIVER MILITARY AND COMMERCIAL TEMPERATURE RANGES IDT54/74FCT543/A/C FAST CMOS OCTAL LATCHED TRANSCEIVER FEATURES: • • • • • • • • • • • • • DESCRIPTION: IDT54FCT543 equivalent to FAST speed

A29L400

Contextual Info: A29L400 Series 512K X 8 Bit / 256K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications - Regulated voltage range: 3.0 to 3.6 volt read and write

LCC-40P-M02

Abstract: diode MARKING CODE A9
Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

29F800T

Abstract: MX29F800BTC-90 22D6H
Contextual Info: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption

ba4410

Abstract: Samsung MCP Flash Memory SAMSUNG k5 dual diode BA45 BA6511 samsung MCP K5 BA40 BA-36 BA5111 bga221
Contextual Info: K5A3x41YT B A MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (2Mx16) Dual Bank NOR Flash Memory / 4M(256Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft August 28, 2001 1.0 Final Specification

AM29LV081B-120

Abstract: AM29LV081B-70 AM29LV081B-90 SA10 SA11 SA12 SA13 SA14 SA15
Contextual Info: Am29LV081B Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

MAX3754

Abstract: MAX3754CCM MAX3755 MAX3755CCM
Contextual Info: 19-2098; Rev 1; 1/02 Dual-Rate, 1Gbps/2Gbps Fibre Channel Quad-Port Bypass ICs with Repeater Features ♦ Pin Selectable 1.0625Gbps/2.125Gbps Dual-Rate Operation ♦ Meets Fibre Channel Jitter Tolerance ♦ 1400mV Typical Differential Output Swing ♦ 3.0V to 3.6V Operation

Contextual Info: SCD#QM5323 Source Control Drawing Upscreening/Manufacturing Specification P/N FT7C261-55WMB-CY Title Page . List of Effective Pages .

amd29f040b

Abstract: 29f040b amd 29f040 BM29F040 29F040-90TI AMD29F040
Contextual Info: BRIGHT Preliminary BM29F040 Microelectronics Inc. 4 MEGABIT 512K x 8 5 VOLT SECTOR ERASE CMOS FLASH MEMORY GENERAL DESCRIPTION The BM29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as 512K x 8 bits each. The BM29F040 is offered in an Industry standard 32-pin package which is backward compatible to 1