A5 .1 U SMD Search Results

Contextual Info: M M O TO R O LA Military 54LS05 Hex 1-In p u t In v e rte r G ate MPO m ini ELECTRICALLY TESTED PER: MIL-M-38510/30004 AVAILABLE AS: LOGIC DIAGRAM V cc A6 Y6 A5 Y5 M Y4 1) JAN: JM 3851Q/30004BXA 2) SMD: * 3) 883C. 54LS05/BXAJC X = CASE OUTLINE AS FOLLOWS:

54als04

Contextual Info: M MOTOROLA M ilitary 5 4 A L S0 4 Hex 1-In p u t In v e rte r G ate ELECTRICALLY TESTED PER: MPG54ALS04 AVAILABLE AS: LOGIC DIAGRAM VC c A6 Y6 A5 V5 P«1 P»1 M FH N A4 Y4 \T\ [~5~| 1) JAN: N/A 2) SMD: N/A 3) 883C: 54ALS04/BXAJC X = CASE OUTLINE AS FOLLOWS:

Contextual Info: T T WS512K8-XCX M/HITE M IC R O ELE C TR O N IC S 512Kx8 SRAM MODULE FEATURES FIG. 1 • PIN CONFIGURATION TOP VIEW A 1 8C 1 ^ 32 U Vcc A 16C 2 A 14C 3 31 Ü A 15 30 U A17 A 1 2H 4 29 H WE A7C 5 28 H A13 A6 C 6 27 H A8 A5 C 7 26 H A9 A4 E 8 A3 C9 A 2 C 10

Contextual Info: 77 M/HITE /MICROELECTRONICS WS512K8-XCX 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 • A c c ess T im e s 20, 25, 35, 45ns PIN CONFIGURATION TOP VIEW A18 E 1 A16 C 2 ^ 32 U Vcc A14C 3 30 29 A7 H 5 28 C6 27 A5 E 7 26 A4 C 8 25 A3 A2 C9 C 10 S ta n d a rd M ic ro c irc u it D ra w in g , 5962-92078

Contextual Info: I/M-IITE /M IC R O ELEC T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 P IN C O N F IG U R A T IO N T O P V IE W L 1 A16 r 2 A15 [7 3 32 A12 4 29 A7C 5 A6 [T 6 A5 E 7

1221H

Abstract: A12C White Microelectronics 14 PIN DIP WS128K8-XCX
Contextual Info: WHITE /MICROELECTRONICS WS128K8-XCX 128Kx8 SRAM MODULE FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW n c E 1 W 32 13 Vcc A16C 2 31 H A15 A 14C 3 30 □ nc A 1 2 |I 4 29 U we A7 C 5 27 □ A8 A5Ü 7 26 □ A9 A4 C 8 25 □ A11 C9 24 □ ÖE A 2 C 10 23 □ A10

Contextual Info: WS128K8-XCX I/I/HITE / M I C R O E L E C T R O N I C S 128Kx8 SRAM MODULE FEATURES FIG. 1 • A cce ss T im e s 55 to 120nS PIN CONFIGURATION NC E 1 ^ 1 A15 31 A14C 3 A12 C 4 29 U WE A7 C 5 28 J A13 A6 H 6 27 H AS A5 E 7 26 □ A9 30 H NC 25 I ] A11 A3 C 9

TXC Corporation

Abstract: Crystal Oscillator TXC
Contextual Info: TXC CORPORATION 4F, NO. 16, Sec. 2 Chung Yang S Rd., Peitou, Taipei, Taiwan. TEL : 886-2-2894-1202 , 886-2-2895-2201 FAX : 886-2-2894-1206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL CUSTOMER : PRODUCT TYPE : SMD SEAM SEALING CXO 5.0*3.2 NOMINAL FREQ.

VAOL-S12YP4

Contextual Info: v y ® OPTOELECTRONICS lig h tin g :th e w a y 1206 SMD TYPE LED VAOL-S12YP4 Features • Fit automatic placement equipment. • Fit Compatible with infrared and vapor phase reflow solder process. • Pb-free. • RoHS compliant. Descriptions • • •

Contextual Info: WS512K8-XCX H i- R E U A B IL iT Y P R O D U C T 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 • A ccess Tim es 20, 25, 35, 45ns PIN CONFIGURATION TOP VIEW A 1 8C 1 'w / ■ Standard M icrocircuit Drawing, 5962-92078 ■ MIL-STD-883 Com pliant D evices A vailab le

Contextual Info: a WS512K8-XCX WHITE /MICROELECTRONICS 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 • A c c e ss T im e s 20, 25, 35, 45ns PIN CONFIGURATION TOP VIEW A18 C A16 C A14 C A12 C A7 H A6 C A5 C A4 C A3 C A2 C A1 C AOC i/ooC 1/01 C I/02 □ GNDC 1 2 3 4 5

Contextual Info: 1206 SMD TYPE LED OPTOELECTRONICS VAOL-S12YP4 ligh ting:thew ay Features • Fit automatic placement equipment. • Fit Compatible with infrared and vapor phase reflow solder process. • Pb-free. • RoHS compliant. Descriptions • • • • • For higher packing density .

54LS04

Abstract: 54LS04/BCAJC
Contextual Info: MOTOROLA M ilitary 5 4 L S 0 4 H ex-Input Inverter G a te MP0 ELECTRICALLY TESTED PER: MIL-M-38510/30003 mini LOGIC DIAGRAM Vcc A6 Y6 A5 Y5 A4 V4 AVAILABLE AS: 1 JAN: JM38510/30003BXA 2) SMD: N/A 3)883: 54LS04/BXAJC X = CASE OUTLINE AS FOLLOWS: PACKAGE: CERDIP: C

Contextual Info: W M ilita ry 5 4 F 1 4 M O TO R O LA . H e x In v e rte r S ch m itt Trigger M P O mini ELECTRICALLY TESTED PER: 5962-8875201 AVAILABLE AS: 1) JAN: N/A 2) SMD: 5962-8875201 3)883: 54F14/BXAJC X = CASE OUTLINE AS FOLLOWS: PACKAGE: CERDIP: C CERFLAT: D LCC: 2

Contextual Info: MT5C2561 883C 256K X 1 SRAM MILITARY SRAM • • • • PIN ASSIGNMENT Top View SMD 5962-88725 JAN M 38510/293 MIL-STD-883, Class B Radiation tolerant (consult factory) 24L/300 DIP (D-9) A0 C1 -W24 ]Vcc A1 [ 2 23 ]A17 A2 Û3 22 PA16 21 ]A15 A3 A4 20 ]A14

10SC4M

Abstract: f10sc4
Contextual Info: S /a v M * - K U 7 S W Schottky Barrier Diode - I * O U T LIN E D IM E N S IO N S DF10SC4M U nit • mm P a c k a g e I S T O -2 2 0 10 . 2 ± a : M 40 V 10 A 0 .5 ±a @ Date code ati^i_ 2 Type No. 05 Ö 10SC4M m a Polarity >SMD Il >Tjl50°C >Prrsm t j ^ y ' j I ffiti

y6 smd transistor

Abstract: y4 smd transistor smd diode y4 smd transistor y5 IC 4094 smd transistor y3 y2 smd transistor smd a7 SMD a7 Transistor smd transistor A5
Contextual Info: ACTS541MS S E M I C O N D U C T O R Radiation Hardened Octal Three-State Buffer/Line Driver January 1996 Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96726 and Harris’ QM Plan

Y1 smd

Abstract: 5962F9671201VCC 5962F9671201VXC ACTS04HMSR ACTS04MS
Contextual Info: ACTS04MS S E M I C O N D U C T O R Radiation Hardened Hex Inverter January 1996 Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96712 and Harris’ QM Plan

Contextual Info: M ilita ry 54F 1 4 MOTOROLA H e x In v e rte r S c h m itt Trigger ELECTRICALLY TESTED PER: 5962-8875201 M P O l/I/W AVAILABLE AS: 1 JAN: N/A 2) SMD: 5962-8875201 3)883: 54F14/BXAJC X = CASE OUTLINE AS FOLLOWS: PACKAGE: CERDIP: C CERFLAT: D LCC: 2 LOGIC DIAGRAM

5962R9571401QRC

Abstract: 5962R9571401QXC 5962R9571401VRC 5962R9571401VXC HS-82C08RH
Contextual Info: HS-82C08RH S E M I C O N D U C T O R Radiation Hardened 8-Bit Bus Transceiver February 1996 Features Functional Diagram • Devices QML Qualified in Accordance With MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95714 and Harris’ QM Plan

SK-520

Contextual Info: SMD Schottky Barrier Rectifiers CDBA520-G Thru. CDBA5200-G Reverse Voltage: 20 to 200 Volts Forward Current: 5.0 Amp RoHS Device Features DO-214AC SMA -Low Profile surface mount applications in order to optimize board space. -Low power loss, high efficiency.

Contextual Info: ACTS245MS Semiconductor Radiation Hardened Octal Non-Inverting Bidirectional Bus Transceiver January 1996 Features Pinouts Devices QML Qualified in Accordance with MIL-PRF-38535 Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96719 and Harris’ QM Plan

Contextual Info: TT W MS512K8-XXX M/HITE /M ICROELECTRONICS 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 PRELIM INA RY* FEATURES • A c c e s s T im e s 17, 2 0 , 2 5, 3 5, 4 5, 5 5n S C o m m e r c ia l, In d u s tr i a l a n d M i l i t a r y T e m p e r a t u r e fla n g e ■

Contextual Info: ACS245MS Semiconductor Radiation Hardened Octal Non-Inverting Bidirectional Bus Transceiver January 1996 Features Pinouts Devices QML Qualified in Accordance with MIL-PRF-38535 Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96707 and Harris’ QM Plan