A5 .1 U SMD Search Results

Contextual Info: 77 M/HITE /MICROELECTRONICS WS512K8-XCX 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 • A c c ess T im e s 20, 25, 35, 45ns PIN CONFIGURATION TOP VIEW A18 E 1 A16 C 2 ^ 32 U Vcc A14C 3 30 29 A7 H 5 28 C6 27 A5 E 7 26 A4 C 8 25 A3 A2 C9 C 10 S ta n d a rd M ic ro c irc u it D ra w in g , 5962-92078

1221H

Abstract: A12C White Microelectronics 14 PIN DIP WS128K8-XCX
Contextual Info: WHITE /MICROELECTRONICS WS128K8-XCX 128Kx8 SRAM MODULE FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW n c E 1 W 32 13 Vcc A16C 2 31 H A15 A 14C 3 30 □ nc A 1 2 |I 4 29 U we A7 C 5 27 □ A8 A5Ü 7 26 □ A9 A4 C 8 25 □ A11 C9 24 □ ÖE A 2 C 10 23 □ A10

TXC Corporation

Abstract: Crystal Oscillator TXC
Contextual Info: TXC CORPORATION 4F, NO. 16, Sec. 2 Chung Yang S Rd., Peitou, Taipei, Taiwan. TEL : 886-2-2894-1202 , 886-2-2895-2201 FAX : 886-2-2894-1206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL CUSTOMER : PRODUCT TYPE : SMD SEAM SEALING CXO 5.0*3.2 NOMINAL FREQ.

VAOL-S12YP4

Contextual Info: v y ® OPTOELECTRONICS lig h tin g :th e w a y 1206 SMD TYPE LED VAOL-S12YP4 Features • Fit automatic placement equipment. • Fit Compatible with infrared and vapor phase reflow solder process. • Pb-free. • RoHS compliant. Descriptions • • •

Contextual Info: a WS512K8-XCX WHITE /MICROELECTRONICS 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 • A c c e ss T im e s 20, 25, 35, 45ns PIN CONFIGURATION TOP VIEW A18 C A16 C A14 C A12 C A7 H A6 C A5 C A4 C A3 C A2 C A1 C AOC i/ooC 1/01 C I/02 □ GNDC 1 2 3 4 5

Contextual Info: MT5C2561 883C 256K X 1 SRAM MILITARY SRAM • • • • PIN ASSIGNMENT Top View SMD 5962-88725 JAN M 38510/293 MIL-STD-883, Class B Radiation tolerant (consult factory) 24L/300 DIP (D-9) A0 C1 -W24 ]Vcc A1 [ 2 23 ]A17 A2 Û3 22 PA16 21 ]A15 A3 A4 20 ]A14

10SC4M

Abstract: f10sc4
Contextual Info: S /a v M * - K U 7 S W Schottky Barrier Diode - I * O U T LIN E D IM E N S IO N S DF10SC4M U nit • mm P a c k a g e I S T O -2 2 0 10 . 2 ± a : M 40 V 10 A 0 .5 ±a @ Date code ati^i_ 2 Type No. 05 Ö 10SC4M m a Polarity >SMD Il >Tjl50°C >Prrsm t j ^ y ' j I ffiti

y6 smd transistor

Abstract: y4 smd transistor smd diode y4 smd transistor y5 IC 4094 smd transistor y3 y2 smd transistor smd a7 SMD a7 Transistor smd transistor A5
Contextual Info: ACTS541MS S E M I C O N D U C T O R Radiation Hardened Octal Three-State Buffer/Line Driver January 1996 Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96726 and Harris’ QM Plan

Contextual Info: SMD Schottky Barrier Rectifiers CDBA520-HF Thru. CDBA5200-HF Reverse Voltage: 20 to 200 Volts Forward Current: 5.0 Amp RoHS Device Halogen Free DO-214AC SMA Features -Low Profile surface mount applications in order to optimize board space. 0.067 (1.70) 0.047 (1.20)

.B07 smd

Contextual Info: HS-82C08RH 3 Radiation Hardened 8-Bit Bus Transceiver February 1996 Functionai Diagram Features • Devices QML Qualified in Accordance With MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95714 and Harris’ QM Plan

Selector Guide

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Capacitors - Solid Through-hole, Wet SMD, and Wet Through-hole Tantalums I INNOVAT AND TEC O L OGY Tantalum N HN CAPACITORS O 19 62-2012 Tantalum Capacitors in Solid Through-hole, Wet SMD, and Wet Through-hole

C2625

Abstract: a5 z smd
Contextual Info: WS57C64F MILITARY 8K x 8 CMOS EPROM KEY FEATURES • Fast Access Time • EPI Processing — 70 ns — Latch-Up Immunity Up to 200 mA • Low Power Consumption • Fast Programming • DESC SMD No. 8510207 • Standard EPROM Pinout • Available in CERDIP and CLLCC

smd yb

Contextual Info: ACS521MS Semiconductor Radiation Hardened 8-Bit Magnitude Comparator January 1996 Features Pinouts Devices QML Qualified in Accordance with MIL-PRF-38535 Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96709 and Harris’ QM Plan

Contextual Info: BB02-CC CUSTOMER PRODUCT SPECIFICATION S H E E T B B 02 -C C - 1.27mm FEM A LE HDR SMD DUAL E N T R Y Dü AD ROW ROARD TO DO ARD - 06 to 60 C O N T A C T S DOW P RO FILEN.2m m FEATURES L O W P R O F ILE : 2.2mm HEIGHT M A T E S W I T H PL B O A R D L O N N E L T O R

Contextual Info: <8>MOTOROLA M ilita ry 5 4 F 0 4 H e x 1-Input In v e rte r G ate MP0 ELECTRICALLY TESTED PER: MIL-M-38510/33002 lllllll LOGIC DIAGRAM Vcc A6 Y6 A5 Y5 A4 Y4 AVAILABLE AS: 1 JAN: JM38510/33002BXA 2) SMD: N/A 3) 883: 54F04/BXAJCX X = CASE OUTLINE AS FOLLOWS:

PDM41257SA15D

Abstract: Paradigm 41256 PDM41024S20L32 PDM41024-S20L32 PDM41257LA15D MT5C1005C CY7C199-35DMB SRAM Cross Reference EDI84256LPS25TB 41256
Contextual Info: National Semiconductor Part Numbering System N S 41024 L 20 E -SMD Grade Package Code Speed Grade Power Level Device Type /883 MIL-STD-883 Level B AC/DC tested at –55, +25 and +125°C with High Temp Burn-in -SMD DESC Standard Military Drawing AC/DC tested at –55, +25 and +125°C with High Temp Burn-in

Contextual Info: a WF2M16-XXX5 WHITE /MICROELECTRONICS 2Mx16 FLASH MODULE, SMD 5962-97610 pending PRELIMINARY* FEATURES • A c c e s s T im e s o f 9 0 , 1 2 0 , 1 5 0 n s ■ P a c k a g in g : • 56 le a d , H e rm e tic C e ra m ic , 0 .5 2 0 " C S O P (P a c k a g e 207).

Contextual Info: Honeywell Military & Space Products HC6856 32K x 8 STATIC RAM FEATURES RADIATION OTHER • Fabricated with R IC M O S “ IV Bulk 0.8 urn Process Lelf = 0.65 urn • Listed on SMD #5962-92153. Available as MIL-PRF-38535 QML Class Q and Class V • Total Dose Hardness through 1x106 rad(S i02)

Contextual Info: Schottky Barrier Diode wnnm o u t l i n e Single Diode D3FS4A Weight 0.16g Typ 4 0 V 2 .6 A / Cathode mark Feature • /J ^ S M D Unit-mm Package I 2F • V f =0.45V • Small SMD • Low V f=0.45V • P rrsm • P r rs m R ating (B — M — @ • fü r

Contextual Info: TT WMS512K8-XXX M/HITE /MICROELECTRONICS 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES 32 pin, Rectangular Ceram ic Leadless Chip Carrier Package 601 • A ccess Tim es 15,17, 20, 25, 35, 45, 55ns ■ MIL-STD-883 Com pliant D evices A vailab le Com m ercial, Industrial and M ilita ry Tem perature Range

Contextual Info: •lì EDI88512CA H i-R £LiA S IÜ T Y PRODUCT 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES The E D I88512C A is a 4 m e g a b it M o n o lith ic C M O S S ta tic R A M . ■ A cce ss T im e s o f 1 5 ,1 7 , 20, 25, 35, 45, 55ns ■ D ata R e te n tio n F u n ctio n LPA ve rsio n

Contextual Info: ASi? MT5C1001 883C 1M X 1 SRAM AUSTIN SEMICONDUCTOR, INC. SRAM 1 MEG X 1 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-92316 • M IL -S T D -8 8 3 28-Pin DIP 400 MIL FEATURES • • • • High speed: 15, 20, 25, 35 and 45ns

DA10

Abstract: WS57C64F WS57C64F-55 WS57C64F-55D WS57C64F-55J WS57C64F-70 WS57C64F-70CMB WS57C64F-70D WS57C64F-70DI SMD Capacitor symbols
Contextual Info: WS57C64F HIGH SPEED 8K x 8 CMOS EPROM KEY FEATURES • Fast Access Time • EPI Processing — 55 ns — Latch-Up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 8510207 * Standard EPROM Pinout • Available in PLDCC GENERAL DESCRIPTION The WS57C64F is an extrem ely HIGH PERFORMANCE 64K UV Erasable E lectrically Program m able Read O nly

BYS21-45

Abstract: fusible 4501 ic 4501 b3161
Contextual Info: Nonvolatile Safety Counter SLE 4501 Preliminary Data MOS IC Type Ordering Code Package SLE 4501 SLE 4501 K Q67100-H8377 in preparation P-DIP-8 MtKROPACK SMD Features • Internal generation of programming voltage • Counting range 22 binary bits, nonvolatile storage